SAFSE2G14KB0T00
Abstract: SAWCD1G84LA0T001960 SAFSE942MAL0T05 SAFCC897MKA0T00 SAFSE1G57KC0T00 Part marking SAFCC1G74KA0T00 SAFSE851MKB0T00 SAFCC942MAM0T00 SAFSD1G57FA0T00
Text: Filters for Communication Equipment 03.12.9 for RF/Local SAW Filters 4-1.50±0.15 o EGSM 3.0 ± 0.2 ∗ 1.15max. M 3.0 ± 0.2 Dot Marking ø0.2 6-0.60±0.15 (2) Marking : Laser Printing ∗ : EIAJ Code (4) 0.4±0.1 (3) (0.20) (5) (6) (1) SAFCC942MAM0T00 Pin
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15max.
SAFCC942MAM0T00
SAFCC897MKA0T00
880MHz
915MHz)
50ohm
SAFSE2G14KB0T00
SAWCD1G84LA0T001960
SAFSE942MAL0T05
SAFCC897MKA0T00
SAFSE1G57KC0T00
Part marking
SAFCC1G74KA0T00
SAFSE851MKB0T00
SAFCC942MAM0T00
SAFSD1G57FA0T00
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CNY70
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
18-Jul-08
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BF970
Abstract: BF970 transistor
Text: BF970 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50
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BF970
BF970
D-74025
20-Jan-99
BF970 transistor
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BFW92
Abstract: No abstract text available
Text: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50
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BFW92
BFW92
D-74025
20-Jan-99
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bfw92
Abstract: No abstract text available
Text: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50
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BFW92
BFW92
D-74025
20-Jan-99
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523AN
Abstract: PCA9306 PCA9306DTR2G UDFN-8 PCA9306USG
Text: PCA9306 Dual Bidirectional I2C-bus and SMBus Voltage-Level Translator The PCA9306 is a dual bidirectional I2C−bus and SMBus voltage−level translator with an enable EN input. http://onsemi.com Features MARKING DIAGRAMS • 2−bit Bidirectional Translator for SDA and SCL Lines in
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PCA9306
948AL
523AN
PCA9306/D
PCA9306DTR2G
UDFN-8
PCA9306USG
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E192
Abstract: TR1210 25PPM nicr 8020
Text: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments
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10ppm,
25ppm,
50ppm
E192
TR1210
25PPM
nicr 8020
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25PPM
Abstract: TR1218
Text: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments
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10ppm,
25ppm,
50ppm
25PPM
TR1218
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sensor 815a
Abstract: HAll EFFECT SENSOR CODING HAL 130 Hall effect 815a HAL815K
Text: ADVANCE INFORMATION MICRONAS Edition Nov. 10, 2000 6251-537-1AI HAL815 Programmable Linear Hall Sensor HAL 815 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
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6251-537-1AI
HAL815
sensor 815a
HAll EFFECT SENSOR CODING
HAL 130
Hall effect 815a
HAL815K
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TO92UT-1
Abstract: TO92UT
Text: DATA SHEET MICRONAS Edition March 4, 2004 6251-528-1DS HAL1000 Programmable Hall Switch MICRONAS HAL1000 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
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HAL1000
6251-528-1DS
HAL1000
TO92UT-1
TO92UT
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f25 marking code
Abstract: MKFGA25M0HA0P00B05 EIAJ monthly
Text: Filters for Audio Visual Equipment 03.12.9 BGS Filters H W ∗ 1.3±0.1 2.5±0.2 L 2.5±0.2 T 0.3±0.1 0.5±0.1 Width W : 7.0/max. Thickness T : 5.0/max. Height H : 8.0/max. Length of Terminal L : 5.0±1.0 Marking : F25.0CA : Vendor's Code ∗ : EIAJ Monthly code
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MKFGA25M0HA0P00B05
60kHz
within220
50kHz
23MHz
fo-400kHz)
f25 marking code
MKFGA25M0HA0P00B05
EIAJ monthly
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Transistor BFR 30
Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
Text: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1
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BFR93
BFR93R
D-74025
Transistor BFR 30
silicon npn planar rf transistor sot 143
zo 103 ma
BFR 67
bfr 705
BFR 30 transistor
Transistor BFR 14
Transistor BFR 35
ZO 103
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED diode k77 K77 diode
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750
BAT750-GS18
BAT750-GS08
08-Apr-05
VISHAY diode MARKING ED
VISHAY MARKING ED
diode k77
K77 diode
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NCP5424
Abstract: NCP5424D NCP5424DR2
Text: NCP5424 Dual Synchronous Buck Controller with Input Current Sharing http://onsemi.com SO-16 D SUFFIX CASE 751B 16 1 PIN CONNECTIONS AND MARKING DIAGRAM A WL Y WW Features • • • • • • • • Hiccup Mode Current Limit Controller 1 Cycle-to-Cycle Current Limit (Controller 2)
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NCP5424
SO-16
NCP5424
NCP5424/D
NCP5424D
NCP5424DR2
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MT41J256M16
Abstract: MT41J512M8R MT41J512M8RA-15 MT41J512M8RA MT41J512M8RA-15E MT41J512M8RA15E MT41J512M8
Text: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT41J1G4
MT41J512M8
MT41J256M16
09005aef8417277b
MT41J256M16
MT41J512M8R
MT41J512M8RA-15
MT41J512M8RA
MT41J512M8RA-15E
MT41J512M8RA15E
MT41J512M8
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MT41J256M16
Abstract: MT41J512M8RH K1012 MT41J512M8RH125
Text: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT41J1G4
MT41J512M8
MT41J256M16
819Way,
09005aef8417277b
MT41J256M16
MT41J512M8RH
K1012
MT41J512M8RH125
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mt41j256m16
Abstract: DDR3 timing diagram FBGA DDR3 x32
Text: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT41J1G4
MT41J512M8
MT41J256M16
09005aef8417277b
mt41j256m16
DDR3 timing diagram
FBGA DDR3 x32
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Untitled
Abstract: No abstract text available
Text: UDZS2.4B series Surface Mount Zener Diodes P b Lead Pb -Free SMALL SIGNAL ZENER DIODES 200m WATTS Features: * Non-wire bonding structure improves * High demand voltage range (2.4V-36V) Mechanical Data: * Case : SOD-323 Molded plastic. * Terminals : Solder able per MIL-STD-202, Method208.
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V-36V)
OD-323
MIL-STD-202,
Method208.
004grams
OD-323
28-Apr-09
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din 3141
Abstract: No abstract text available
Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50
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OCR Scan
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BFW92A
BFW92A
D-74025
31-Oct-97
din 3141
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varistor 595 PHILIPS
Abstract: varistor 592 PHILIPS 2322 730 31 103 philips VARISTOR 592 250 VARISTOR 593 PHILIPS varistor 594 PHILIPS philips 22 ah 590 philips 2322 594
Text: Philips Components Product specification Varistors 2322 592 to 2322 595 FEATURES MARKING MOUNTING • Zinc oxide disc, epoxy coated The varistors are marked with the following information: The varistors are suitable for processing on automatic insertion and cutting and bending equipment.
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BFW92
Abstract: No abstract text available
Text: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92
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OCR Scan
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PDF
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BFW92
BFW92
D-74025
31-Oct-97
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BF970
Abstract: No abstract text available
Text: TEMIC BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50
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OCR Scan
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BF970
BF970
D-74025
31-Oct-97
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MARKING a3 SOT-23
Abstract: No abstract text available
Text: Temic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For selfoscillating RF m ixer stages 1 R R E 3 1— 1 BF569 Marking: LH Plastic case SOT 23
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BF569/BF569R
BF569
BF569R
llk40
D-74025
31-Oct-97
MARKING a3 SOT-23
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Untitled
Abstract: No abstract text available
Text: 16 M E G :x4,x8 MICRON I TECHNOLOGY, INC. Q FEATURES 44-Pin TSOP x4 NC DQ0 NC DQ1 - MARKING 4M 4 2M 8 - - • W RITE Recovery OWR/tDPL *WR = 1 CLK *WR = 2 CLK C on tact facto ry for availability.) Al A2 • Plastic Package - OCPL 44-pin TSOP (400 mil) Note:
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44-Pin
096-cycle
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