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    MARKING AE DC Search Results

    MARKING AE DC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING AE DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking AF

    Abstract: C166 C167 C167CR SAH-C167CW-L16M c167cw-l16
    Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.0 Device : Stepping Code / Marking : SAH-C167CW-L16M AE, AF This errata sheet describes the functional problems and deviations from the DC/AC specification known in this step. For backward reference, a table which


    Original     		PDF SAH-C167CW-L16M C167CW-L16M 144-pin P-MQFP-144-1) C167CW-L16M, marking AF C166 C167 C167CR SAH-C167CW-L16M c167cw-l16

    B82790C0513N201

    Abstract: IND0009-B-E IND0163-B EMC Ferrite inductor B82790C0253N201 B82790C0474N215 B82790C0113N201 B82790C0502N201 B82790S0253N201 B82790-C0113-N201
    Text: Chokes for Data and Signal Lines B82790C0*/K0*N2 Double Chokes B82790S0*/L0*N2 Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 mH to 4,7 mH Construction • Current-compensated ring core choke with ferrite core ■ Bifilar winding B82790C0*/K0*


    Original     		PDF B82790C0 B82790S0 VAC/80 B82790C0513N201 IND0009-B-E IND0163-B EMC Ferrite inductor B82790C0253N201 B82790C0474N215 B82790C0113N201 B82790C0502N201 B82790S0253N201 B82790-C0113-N201

    B82790C0474N215

    Abstract: B82790C0513N201 B82790s0513N201 IND0163-B B82790C0475N265 Leaded Common Mode Chokes B82790C0113N201 B82790C0253N201 B82790C0502N201 B82790S0253N201
    Text: Chokes for Data and Signal Lines B82790C0*/K0*N2 Double Chokes B82790S0*/L0*N2 Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 mH to 4,7 mH Construction • Current-compensated ring core choke with ferrite core ■ Bifilar winding B82790C0*/K0*


    Original     		PDF B82790C0 B82790S0 VAC/80 B82790C0474N215 B82790C0513N201 B82790s0513N201 IND0163-B B82790C0475N265 Leaded Common Mode Chokes B82790C0113N201 B82790C0253N201 B82790C0502N201 B82790S0253N201

    SYMMETRICAL

    Abstract: B82790C0113N201 B82790C0253N201 B82790C0502N201 B82790C0513N201 B82790S0253N201 IND0009-B-E IND0163-B ee-40
    Text: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Chokes for Data and Signal Lines B82790C0*/K0*N2 Double Chokes B82790S0*/L0*N2 Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 mH to 4,7 mH Construction


    Original     		PDF B82790C0 B82790S0 VAC/80 SYMMETRICAL B82790C0113N201 B82790C0253N201 B82790C0502N201 B82790C0513N201 B82790S0253N201 IND0009-B-E IND0163-B ee-40

    Marking ae SOT89

    Abstract: marking AE SOT-89 C817 BTB1424AM3 BTD2150AM3
    Text: CYStech Electronics Corp. Spec. No. : C817M3A Issued Date : 2003.10.05 Revised Date :2005.10.04 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424AM3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.


    Original     		PDF C817M3A BTB1424AM3 -100mA. BTD2150AM3 OT-89 UL94V-0 Marking ae SOT89 marking AE SOT-89 C817 BTB1424AM3 BTD2150AM3

    BTB1424N3

    Abstract: BTD2150N3 N3 SOT-23 transistor marking 2A H
    Text: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA).


    Original     		PDF C817N3-R BTB1424N3 -100mA) BTD2150N3 OT-23 UL94V-0 BTB1424N3 BTD2150N3 N3 SOT-23 transistor marking 2A H

    BTB1424N3

    Abstract: BTD2150N3
    Text: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA).


    Original     		PDF C817N3-R BTB1424N3 -100mA) BTD2150N3 OT-23 UL94V-0 BTB1424N3 BTD2150N3

    Untitled

    Abstract: No abstract text available
    Text: Filter specification TFS 400 1/4 Application The filter is suitable for GSM, DCS 1800 and dual band receivers. It can especially be used in the first IF in which full


    Original     		PDF 1-88-VECTRON-1 1-888-FAX-VECTRON

    Untitled

    Abstract: No abstract text available
    Text: Filter Specification TFS 400 D - 1/4 Application The filter is suitable for GSM, DCS 1800 and dual band applications. It can especially be used in the first IF in which full channel


    Original     		PDF 1-88-VECTRON-1 1-888-FAX-VECTRON

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2


    Original     		PDF OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current.


    Original     		PDF OT-23

    marking AE

    Abstract: 2SA1365 SMD iC MARKING AE
    Text: Transistors IC SMD Type Silicon PNP Epitaxia 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current.


    Original     		PDF 2SA1365 OT-23 marking AE 2SA1365 SMD iC MARKING AE

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current. 0.55 Super mini package for easy mounting.


    Original     		PDF OT-23

    N67 TRANSFORMER

    Abstract: N67 transformer core SIEMENS n87 B66424-B1012-D1 B66424B1012D1 EFD TRANSFORMER B66424 marking k4 n67 transistor U250
    Text: EFD 30/15/9 Core B66423 ● E core with flattened, lower center leg for especially flat transformer design ● For DC/DC converters ● EFD cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 0,99 mm–1 = 68 mm = 69 mm2


    Original     		PDF B66423 B66423-G-X167 B66423-G-X187 B66424-B1012-D1 B66424-B2000 N67 TRANSFORMER N67 transformer core SIEMENS n87 B66424-B1012-D1 B66424B1012D1 EFD TRANSFORMER B66424 marking k4 n67 transistor U250

    efd-15 transformer

    Abstract: SMD MARKING CODE K3 efd-15 12 pin smd transformer B66414-B1008-D1 A7000 N87 material smd transistor marking a7 B66414-B6008-T1 B66413-G-X149 B66413-U160-L187
    Text: EFD 15/8/5 Core B66413 ● E core with flattened, lower center leg for especially flat transformer design ● For DC/DC converters ● EFD cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 2,27 mm–1 = 34 mm = 15 mm2


    Original     		PDF B66413 B66413-G-X149 B66413-G-X187 B66413-U100-K187 B66413-U160-L B66414-B6008-T1 B66414-B6008-T2 B66414-B2000 B66414-A7000 FEK0329-J efd-15 transformer SMD MARKING CODE K3 efd-15 12 pin smd transformer B66414-B1008-D1 A7000 N87 material smd transistor marking a7 B66414-B6008-T1 B66413-G-X149 B66413-U160-L187

    B82789C0113H001

    Abstract: B82789C0104H001 B82789 B82789C0513H001 B82789C0513H002 B82789C0223H001 B82789S0223H001 bifilar line dc choke circuit Inductor choke
    Text: Chokes for Data and Signal Lines B82789*H I Core Choke, EIA 1812 Rated voltage 42 V /80VRated inductance 11 to 100 H Rated current 150 to 300 mA ✁ Construction Current-compensated double choke with ferrite I core Bifilar winding B82789C0. Sector winding (B82789S0.)


    Original     		PDF B82789* /80VRated B82789C0. B82789S0. B82789C0: B82789S0: B82793S0334N215 B82789-* B82789S0223H00* B82789C0113H001 B82789C0104H001 B82789 B82789C0513H001 B82789C0513H002 B82789C0223H001 B82789S0223H001 bifilar line dc choke circuit Inductor choke

    peters SL1301

    Abstract: No abstract text available
    Text: IMX70, IMY70 Series Data Sheet 70 to 90 Watt DC-DC Converters Features • RoHS compliant for all six substances • Extremely wide input voltage ranges up to 154 VDC • 1 or 2 outputs up to 48 V • Basic insulation: IMX models • Class I equipment with reinforced insulation: IMY models


    Original     		PDF IMX70, IMY70 03-Apr-2013 peters SL1301

    B66418-B1008-D1

    Abstract: B66418B1008D1 B66418-B2000 marking k4 B66417-G-X187 B66417 B66417-G-X149 B66417-U100-K187 material N87 B66417-U160-K187
    Text: EFD 20/10/7 Core B66417 ● E core with flattened, lower center leg for especially flat transformer design ● For DC/DC converters ● EFD cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 1,52 mm–1 = 47 mm = 31 mm2


    Original     		PDF B66417 B66417-G-X149 B66417-G-X187 B66417-U100-K187 B66417-U160-K187 B66418 B66418-B1008-D1 B66418-B2000 B66418-B1008-D1 B66418B1008D1 B66418-B2000 marking k4 B66417-G-X187 B66417 B66417-G-X149 B66417-U100-K187 material N87 B66417-U160-K187

    B3586

    Abstract: B39871-B3586-U410 C61157-A7-A56 F61074-V8070-Z000
    Text: SAW Components Data Sheet B3586 SAW Components B3586 Low Loss Filter 869,0 MHz Data Sheet Ceramic package DCC6C Features • RF low-loss filter for remote control receivers ■ Package for Surface Mounted Technology SMT ■ Hermetically sealed ceramic package


    Original     		PDF B3586 B39871-B3586-U410 C61157-A7-A56 F61074-V8070-Z000 D-81617 B3586 B39871-B3586-U410 C61157-A7-A56 F61074-V8070-Z000

    transistor fn 155

    Abstract: No abstract text available
    Text: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A


    OCR Scan     		PDF 2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor fn 155

    smd marking code fj

    Abstract: smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP
    Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10P3 U nit: mm r Weight 0.326g Typ 30 V 10 A i 2 4 Feature 6.6 • SMD • SMD • Î S ® V f=0.4V • Ultra-Low V f=0.4V • Reverse connect protection for DC power source • DC O R-output


    OCR Scan     		PDF DE10P3 32fig 50HzX' smd marking code fj smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP

    MIL-PRF-39012

    Abstract: No abstract text available
    Text: NOTES: 1.0 ELECTRICAL SPECIFICATIONS: 1.1 FREQUENCY RANGE: DC to 18.0 GHz 1.2 ATTENUATION ACCURACY: DC to 12.4 GHz 12.4 GHz to 18.0 GHz 0 dB + 0.75 dB + 0.75 dB 1.2.1 1.2.2 1 to 4 dB ± 0 .7 5 dB ± 0 .7 5 dB 1.2.3 5 to 8 dB ± 0 .7 5 dB ±1.00 dB 1.2.4 9 to 12 dB


    OCR Scan     		PDF ATT-0333-XX-SM MIL-PRF-39012

    2SA1362

    Abstract: A1362
    Text: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage


    OCR Scan     		PDF 2SA1362 -400m 2SA1362 A1362