Schneider electric XB5
Abstract: SCHNEIDER zb5 AZ-105 AZ105 ZB5 AW823743 AW84M5 XB5 AW84B5 XB5AL945 PILOT LIGHT HARMONY SCHNEIDER
Text: References Control and signalling units Ø 22 Assembly of other products using: combined sub-assemblies: see page 1/170 accessories: see pages 1/179 and 1/182 Double-headed pushbuttons, spring return with marking Harmony XB5, plastic Double-headed pushbuttons 1
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AL845
AZ105
AL8434)
AL945
AL9434)
AW823743
AW843743
Schneider electric XB5
SCHNEIDER zb5
AZ-105
AZ105
ZB5 AW823743
AW84M5
XB5 AW84B5
XB5AL945
PILOT LIGHT
HARMONY SCHNEIDER
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AFL Marking
Abstract: MARKING CODE AFL MSOP8 Part marking SUFFIX AFL200-00E AFL002-10E
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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AFL000-00E
AFL000-10E
AFL001-10E
AFL002-10E
AFL005-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
AFL Marking
MARKING CODE AFL
MSOP8 Part marking
SUFFIX
AFL200-00E
AFL002-10E
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MARKING CODE AFL
Abstract: MSOP8 Part marking TDFN-6
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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su9189
MARKING CODE AFL
MSOP8 Part marking
TDFN-6
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Untitled
Abstract: No abstract text available
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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AFL000-00E
AFL000-10E
AFL001-10E
AFL002-10E
AFL005-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
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Untitled
Abstract: No abstract text available
Text: AFL Series 11409 Valley View Road Eden Prairie, MN 55344 Phone: 952 829-9217 Fax: (952) 996-1600 Data Sheet NVE AFLxxx-xx Low Power Low Voltage Digital Switch • • • • • ● • Low Voltage Operation Down to 0.9V Low Current Consumption Digital Switch Output
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AFL000-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
AFL300-00E
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Untitled
Abstract: No abstract text available
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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MARKING CODE AFL
Abstract: MSOP8 Part marking
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C
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Q62702-C2354
OT-23
E3SL05
6235b05
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A129 marking code
Abstract: 5F marking
Text: ERB38 o .8A : Outline Drawings r4 * - Y FAST RECOVERY DIODE • t t f t : F e a tu re s :5F : Marking Su p e r high speed sw itching • 9 - > * y W E fie1 il' Ì 7- 3-K : à Color code : White Low V F in turn on • AfltM tt H igh reliability Abridged type name
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ERB38
A129 marking code
5F marking
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SANYO sh2a027-1
Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Text: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead
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004A-DIP14TK
010A-DIP22
005A-DIP14T
011A-DIP24
3000B-NP
3006B-
T0126
SC-43
T0220M
T03PB
SANYO sh2a027-1
3116-SIP12S
ic 4040
MPP36S
SIP14H
3047a
3151-QIP100E
3149-DIP48S
3037A-DIP20H
3029A-DIP28S
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IMBT4403
Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C
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G0D40fl3
OT-23
IMBT3903
IMBT3904
IMBT4400
10Ol3Â
IMBT4401
10CX3>
IMBT2222
BC807-16
IMBT4403
5n80
BC817-16
BC817-25
BC817-40
BC846A
IMBT2222A
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.
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bbS3131
BA223
BA223
DO-34
OD-68)
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RTC1005
Abstract: No abstract text available
Text: N AflER PH IL IP S/ D IS C R ET E DbE D • MAINTENANCE TYPE for new design use PTB23003X _ GGS3G31 QGISDflS T ■ A PKB12005lT 3 1 ^ 7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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PTB23003X)
GGS3G31
PKB12005lT
RTC1005
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SMD CODE 77p
Abstract: S14 SMD BAS70-07 BAS70-70 PINNING-SOT143 A2 DIODE SMD CODE MARKING A2 marking diode SOT143 smd marking s14
Text: • t.bS3T31 □□2M3D7 bfifi H A P X Philips Semiconductors Product specification N AflER P H I L I P S / D I S C R E T E b7E B Schottky barrier diodes FEATURES BAS70-07 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT • Low turn-on and high breakdown
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bbS3T31
BAS70-07
BAS70-70
OT143
PINNING-SOT143
o-31--------
MRA804
SMD CODE 77p
S14 SMD
BAS70-07
PINNING-SOT143
A2 DIODE SMD CODE MARKING
A2 marking diode SOT143
smd marking s14
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Untitled
Abstract: No abstract text available
Text: • bbSB^Bl Q025flfl4 b33 H A P X N AflER PHILIPS/D ISCR ETE PM BT6428 PM BT6429 b7E D _ _ SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD) plastic envelope intended for application in thick and
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Q025flfl4
BT6428
BT6429
PMBT6428
PMBT6429
DPMBT6428
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1h17
Abstract: ovenaire ovenaire 49 TCXO L T-50 ovenaire 10 mhz
Text: OV E N A I R E - A U D I O - T7 »EiböaSSST ODOOflOB fi I -, DIMENSIONS IN MILLIMETERS itic i« o < < ticx n cH^am m Z7/7ZT OVÈNAIRE . AUDIO.« C AflPÉN TEB C H A I? lO T T E $ V llL C . V IR G IN IA U S A + .76 36. SO MODEL OSC 39-1 FR EQ . S ER .N O .
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QQaDfl03
1-H-17
1h17
ovenaire
ovenaire 49
TCXO L
T-50
ovenaire 10 mhz
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TRANSISTOR ba 751
Abstract: BSS87 marking JC MOS MARKING KA Transistor B 1566 S2 MARKING TRANSISTOR Marking BA SOT89
Text: • L.bSB'm OQESbn T3T H A P X N AflER P H I L I P S / D I S C R E T E b?E BSS87 D - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other
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BSS87
TRANSISTOR ba 751
BSS87
marking JC MOS
MARKING KA
Transistor B 1566
S2 MARKING TRANSISTOR
Marking BA SOT89
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BAL99
Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
Text: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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bbS3T31
BAL99
S3131
00242Sfl
BAW62
BAL99
Philips MBB
BAW62 sot23
BAW62 PH
philips diode PH 15
ir 222
BAW62
D0242
LF MARKING CODE
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television
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BY328
bbS3T31
BY328.
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ALG TRANSISTOR
Abstract: No abstract text available
Text: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.
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Q024547
BCV62;
BCV62B;
OT-143
rBCV62A
ALG TRANSISTOR
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m38510/10404
Abstract: 55115 marking code YS SMD E1713 5962-E1713-2
Text: REVISIONS LTR DESCRIPTION DATE yr -m o -oa APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM 1C N/A STANDARDIZED MILITARY DRAWING PREPARED BY J AflpA*,(k . SCKED B Y A _ DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 rj MICROCIRCUIT, LINEAR, DUAL, DIFFERENTIAL LINE
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5962-E1713-2
MIL-BUL-103.
MIL-BUL-103
9S0-S47
m38510/10404
55115
marking code YS SMD
E1713
5962-E1713-2
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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bbS3T31
QQ23b34
BF998
OT143
LtiS3T31
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Untitled
Abstract: No abstract text available
Text: r r i m LTC1426 m TECHNOLOGY Micropower Dual 6-Bit PWM DAC F€OTUR€S D€SCRIPTIOn • Wide Supply Range: 2.7V < V^c ^ 5.5V ■ Wide Reference Voltage Range: OV to 5.5V The LTC 1426 is a dual micropower 6-bit PWM DAC featuring versatile PWM outputs and aflexible pushbutton
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LTC1426
LTC1426
1329/LTC1329-10/LTC1329-50
LTC1446/LTC1446L
LTC1451/LTC1452/LTC1453
LTC1590
LTC8043
16-pin
12-Bit
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Untitled
Abstract: No abstract text available
Text: MICROCOMPUTER LSI MEMORY 1C GATE ARRAY LOGIC LSI The information In th is docum ent 1« »ubject to change w ith o u t notice. Document No. Cl0983EJ3V0tF00 3rd edition (Previous No. iEi-1203) Date Published December 1995 P Printed in Japan NEC Corporation 1986
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Cl0983EJ3V0tF00
iEi-1203)
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