Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING B14 ON SEMICONDUCTOR Search Results

    MARKING B14 ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING B14 ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Schottky

    Abstract: No abstract text available
    Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF RB520S-30 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404003 Schottky

    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408043

    Untitled

    Abstract: No abstract text available
    Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on


    Original     		PDF 1SS400 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404002

    Untitled

    Abstract: No abstract text available
    Text: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408047

    Untitled

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408042

    Untitled

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020


    Original     		PDF TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011

    Untitled

    Abstract: No abstract text available
    Text: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408046

    Untitled

    Abstract: No abstract text available
    Text: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020


    Original     		PDF J-STD-020 2011/65/EU 2002/96/EC OD123HE AEC-Q101 JESD22-B102 D1403011

    Untitled

    Abstract: No abstract text available
    Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408069

    Untitled

    Abstract: No abstract text available
    Text: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSPB10U45S J-STD-020 2011/65/EU 2002/96/EC D1407011

    Untitled

    Abstract: No abstract text available
    Text: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408045

    Untitled

    Abstract: No abstract text available
    Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012

    Untitled

    Abstract: No abstract text available
    Text: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020


    Original     		PDF J-STD-020 2011/65/EU 2002/96/EC OD123HE AEC-Q101 JESD22-B102 D1404004

    Untitled

    Abstract: No abstract text available
    Text: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408044

    Untitled

    Abstract: No abstract text available
    Text: SS12LS thru SS115LS Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Ideal for automated placement - Compact package size, profile <0.85mm - High surge current capability - Low power loss, high efficiency - AEC-Q101 qualified and Halogen free only


    Original     		PDF SS12LS SS115LS AEC-Q101 J-STD-020 2011/65/EU 2002/96/EC OD123HE D1406025

    Untitled

    Abstract: No abstract text available
    Text: MBRF3045CT-Y thru MBRF30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBRF3045CT-Y MBRF30150CT-Y 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1405039

    Schottky

    Abstract: No abstract text available
    Text: SS34L thru SS310L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020


    Original     		PDF SS34L SS310L J-STD-020 2011/65/EU 2002/96/EC D1405056 Schottky

    10U100

    Abstract: TSP10U120S
    Text: TSP10U100S thru TSP10U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		PDF TSP10U100S TSP10U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408038 10U100 TSP10U120S

    transistor c143

    Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
    Text: DTC143 ZM/ZE/ZUA/ZCA/ZSA Taiwan Semiconductor Small Signal Product PNP Small Signal Transistor FEATURES - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor SOT523/SOT323/SOT23 see equivalent circuit


    Original     		PDF DTC143 OT523/SOT323/SOT23 OT-723 S1404021 transistor c143 C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23

    Untitled

    Abstract: No abstract text available
    Text: MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR3045CT-Y MBR30150CT-Y 2011/65/EU 2002/96/EC O-220AB JESD22-B102 D1405038

    Untitled

    Abstract: No abstract text available
    Text: HS1AL thru HS1ML Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Fast switching for high efficiency


    Original     		PDF J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 D1405079

    Schottky

    Abstract: No abstract text available
    Text: MBRF2045CT-Y thru MBRF20200CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBRF2045CT-Y MBRF20200CT-Y 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1405040 Schottky

    Untitled

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability


    Original     		PDF TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011

    marking b14 diode

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability


    Original     		PDF TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 marking b14 diode