Schottky
Abstract: No abstract text available
Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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Original
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RB520S-30
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404003
Schottky
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP10U60S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408043
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
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Original
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1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP20U60S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408047
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP10U45S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408042
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PDF
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Untitled
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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Original
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TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP15U50S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408046
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PDF
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Untitled
Abstract: No abstract text available
Text: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
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Original
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J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1403011
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PDF
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Untitled
Abstract: No abstract text available
Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSN520M60
J-STD-020
2011/65/EU
2002/96/EC
D1408069
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PDF
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Untitled
Abstract: No abstract text available
Text: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSPB10U45S
J-STD-020
2011/65/EU
2002/96/EC
D1407011
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP15U100S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408045
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PDF
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Untitled
Abstract: No abstract text available
Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSPB15U50S
J-STD-020
2011/65/EU
2002/96/EC
D1407012
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PDF
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Untitled
Abstract: No abstract text available
Text: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
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Original
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J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1404004
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP12U120S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408044
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PDF
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Untitled
Abstract: No abstract text available
Text: SS12LS thru SS115LS Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Ideal for automated placement - Compact package size, profile <0.85mm - High surge current capability - Low power loss, high efficiency - AEC-Q101 qualified and Halogen free only
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Original
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SS12LS
SS115LS
AEC-Q101
J-STD-020
2011/65/EU
2002/96/EC
OD123HE
D1406025
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRF3045CT-Y thru MBRF30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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Original
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MBRF3045CT-Y
MBRF30150CT-Y
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1405039
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PDF
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Schottky
Abstract: No abstract text available
Text: SS34L thru SS310L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS34L
SS310L
J-STD-020
2011/65/EU
2002/96/EC
D1405056
Schottky
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PDF
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10U100
Abstract: TSP10U120S
Text: TSP10U100S thru TSP10U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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Original
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TSP10U100S
TSP10U120S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408038
10U100
TSP10U120S
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PDF
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transistor c143
Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
Text: DTC143 ZM/ZE/ZUA/ZCA/ZSA Taiwan Semiconductor Small Signal Product PNP Small Signal Transistor FEATURES - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor SOT523/SOT323/SOT23 see equivalent circuit
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Original
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DTC143
OT523/SOT323/SOT23
OT-723
S1404021
transistor c143
C143 Transistor
ze 003 ic
ZUA SOT23
ze 003
zua SOT-23
ZE SOT-23
marking CODE ZUA SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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Original
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MBR3045CT-Y
MBR30150CT-Y
2011/65/EU
2002/96/EC
O-220AB
JESD22-B102
D1405038
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PDF
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Untitled
Abstract: No abstract text available
Text: HS1AL thru HS1ML Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Fast switching for high efficiency
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Original
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J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
D1405079
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PDF
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Schottky
Abstract: No abstract text available
Text: MBRF2045CT-Y thru MBRF20200CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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Original
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MBRF2045CT-Y
MBRF20200CT-Y
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1405040
Schottky
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PDF
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Untitled
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability
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Original
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TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
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PDF
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marking b14 diode
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability
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Original
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TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
marking b14 diode
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PDF
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