MARKING P1 TRANSISTOR
Abstract: transisitor marking code Power Transisitor 100V 2A 800H SAB-C513A-H SAF-C513A-H
Text: Microcomputer Components Technical Support Group Munich HL MCB PD 8 Errata Sheet May 6, 1996 / Release 1.3 Device : Marking : SAB-C513A-H SAF-C513A-H BA These parts of the SAB-C513A-H are the EEPROM version of the C511/C513 family of components and can be identified by the letters "BA" below the part
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SAB-C513A-H
SAF-C513A-H
SAB-C513A-H
C511/C513
P-LCC44)
FF00H
SAB-C513A-H,
MARKING P1 TRANSISTOR
transisitor marking code
Power Transisitor 100V 2A
800H
SAF-C513A-H
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ba 2nd years
Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Text: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KRX101U
ba 2nd years
KRX101U
b.a 1st year
ba 2nd year
ba 1st year
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ba 2nd years
Abstract: transistor mark BA KRX101E marking BA
Text: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX101E
ba 2nd years
transistor mark BA
KRX101E
marking BA
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ba 2nd years
Abstract: KRX201E marking BA
Text: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX201E
ba 2nd years
KRX201E
marking BA
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transistor mark BA
Abstract: KRX201U ba 2nd years
Text: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX201U
transistor mark BA
KRX201U
ba 2nd years
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GP 023 DIODE
Abstract: GP 005 DIODE
Text: BA 895 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications 2 • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners 1 VES05991 Type Marking Pin Configuration Package BA 895 R
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VES05991
SCD-80
Oct-04-1999
100MHz
GP 023 DIODE
GP 005 DIODE
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h78l05
Abstract: C4149 H78LXXAM H78L12 Marking BA SOT89 TL 873 H78LXX H78LXXAA h78L0 C3745
Text: HI-SINCERITY Spec. No. : IC200403 Issued Date : 2004.03.01 Revised Date : 2004.08.31 Page No. : 1/10 MICROELECTRONICS CORP. H78LXXAM / BM H78LXXAA / BA H78LXX Series Pin Assignment 3-TERMINAL POSITIVE VOLTAGE REGULATORS 1 2 3-Lead Plastic SOT-89 Package Code: M
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IC200403
H78LXXAM
H78LXXAA
H78LXX
OT-89
100mA
183oC
217oC
260oC
h78l05
C4149
H78L12
Marking BA SOT89
TL 873
h78L0
C3745
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StarRam
Abstract: 1MX16Y3VTW
Text: StarRam Part No : 1MX16Y3VTW DRAM and Flash Specialise SYNCHRONOUS DRAM PIN ASSIGNMENT Top View 50-Pin TSOP FEATURES Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can
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1MX16Y3VTW
50-Pin
048-cycle
096-cycle
A0-A10,
DQ0DQ15
StarRam
1MX16Y3VTW
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SUPER CHIP
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
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DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
SUPER CHIP
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MBM29LV800TA-70PF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA
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DS05-20845-6E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0211
MBM29LV800TA-70PF
FPT-48P-M19
FPT-48P-M20
MBM29LV800BA-70PFTN cost
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
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DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0207
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Untitled
Abstract: No abstract text available
Text: Series 43000 .4375" 11.11mm Center-to-Center Spacing Single Row Features: ̋ Cost-competitixe line of .4375" (11.11mm) centerline terminal blocks provides design engineers with multitude of selection choices: base mount and feed thru styles with P.C. pin, turret, quick connect, wire wrap and right angle.
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22AYI
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Untitled
Abstract: No abstract text available
Text: SDRAM AS4SD8M16 Austin Semiconductor, Inc. 8M x 16 SDRAM PIN ASSIGNMENT Top View SYNCHRONOUS DRAM MEMORY FEATURES • • • • • • • • Single 3.3V Power Supply Fully Synchronous to positive Clock Edge SDRAM CAS Latency = 2 (66 MHz), 3 (75 MHz or 83 MHz)
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A10/AP
45ator
AS4SD8M16
AS4SD8M16
AS4SD8M16DG-12/IT
-40oC
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AS4SD8M16
Abstract: No abstract text available
Text: SDRAM AS4SD8M16 PRELIMINARY Austin Semiconductor, Inc. 8M x 16 SDRAM PIN ASSIGNMENT Top View SYNCHRONOUS DRAM MEMORY FEATURES • • • • • • • • Single 3.3V Power Supply Fully Synchronous to positive Clock Edge SDRAM CAS Latency = 2 (66 MHz), 3 (75 MHz or 83 MHz)
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AS4SD8M16
AS4SD8M16DG-12/IT
-40oC
AS4SD8M16
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DDR3 pin out
Abstract: DDR3 SDRAM rs-1 SO-DIMM DDR3 ECC DDR3 SDA sdram ddr3
Text: UG12U7200M8FU Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 1G Bytes 128M x 72 bits SYNCHRONOUS DRAM MODULE 204 Pin DDR3 SDRAM Unbuffered SODIMM w/ECC based on 9 pcs 128M x 8 DDR2 SDRAM 8K Refresh SPECIFICATIONS FEATURES
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UG12U7200M8FU
DDR3 pin out
DDR3 SDRAM
rs-1
SO-DIMM DDR3 ECC
DDR3 SDA
sdram ddr3
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marking t54
Abstract: 2pa30
Text: L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BA T54 -4L J .Q 2.8 0.14 0.48 -*^p d 3§ 038 Pin configuration L 0.70 0.50 3 1= ANODE 2 = NC 3 = CATHODE t .4 2.6 2.4 1.2 R0.1 ÔÔÔ4T ii.8<r 0 .6 0 . 2.00
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BAT54
BAT54
marking t54
2pa30
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marking SH SOT23
Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Text: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123
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0235bDS
DO-35
OD-123
OT-23
marking SH SOT23
smd marking 619
BB505B
smd marking bb
marking 12 SOD123
SOD-123
BB801
BB409
BA 811
SIEMENS marking
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ba682
Abstract: diode marking code 682 BA683 MAF100
Text: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking
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Q62702-A723
Q62702-A121
Q62702-A145
235b05
QQ1S733
ba682
diode marking code 682
BA683
MAF100
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MAF100
Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Text: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk
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-BA683
Q62702-A145
Q62702-A723
Q62702-A121
BA683
QQ1S733
BA682
MAF100
diode 682
diode marking code 682
BA 682
BA682
DIODE ba 683
BA diode
BA683
A723
682 diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings
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OD-323
a235fc
DlHD17fl
Q15Q1Ã
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T48LC 4M 4R 1 S 4 MEG X 4 SDRAM l ^ lld R O N 4 MEG SYNCHRONOUS DRAM 4 SDRAM X Pulsed RAS, Dual Bank, BURST Mode, 3.3V, SELF REFRESH PIN ASSIGNMENT (Top View) • Fully synchronous; all signals (excluding clock enable) registered to positive edge of system clock
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T48LC
T48LC4M
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29F800TA
Abstract: 29f800ba MBM29F800 29F800T
Text: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)
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48-pin
44-pin
F9811
29F800TA
29f800ba
MBM29F800
29F800T
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transistor BA RW
Abstract: No abstract text available
Text: Product specification Philips S em iconductors BC817W; BC818W NPN general purpose transistor PIN CONFIGURATION FEATURES • H igh c u rre n t • S - m in i p a c k a g e . R> R 1 DESCRIPTION °“C N P N tra n s is to r in a p la s tic S O T 3 2 3 package.
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BC817W;
BC818W
MBC67
OT323
17-40W
transistor BA RW
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Untitled
Abstract: No abstract text available
Text: ? BMI FUJITSU SEMICONDUCTOR DATA SHEET • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts
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48-pin
44-pin
FPT-48P-M19)
FPT-48P-M20)
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