KTC9015S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BEB 2 1 Item Marking Description Device Mark BE KTC9015S hFE Grade B B, C * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTC9015S
OT-23
KTC9015S
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marking 702 sot23
Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,
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BSR18A
marking 702 sot23
702 sot23
SP SOT23
ON5258
marking code 10 sot23
marking code p12 sot23
MARKING CODE 13 SOT23
Philips SOT23 code marking
ON5257
marking code 702 SOT23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G
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LMBT4403LT1G
3000/Tape
LMBT4403LT3G
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon LMBT5087LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION 1 Device Shipping Marking LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q
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LMBT5087LT1G
LMBT5087LT3G
3000/Tape
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G
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LMBT3906LT1G
3000/Tape
LMBT3906LT3G
10000/Tape
236AB)
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LMBT3904LT1G
Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
OT-23
LMBT3904LT1G
equivalent of 1AM
1am equivalent
1N916
1AM marking transistor
sot-23 Marking 1am
1aM sot-23 transistor
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1AM marking transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
OT-23
1AM marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 SOT-23-6L Dual 40V complementary transistors FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT
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OT-23-6LPlastic-Encapsulate
CJ2045
OT-23-6L
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel
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LMBT4401LT1G
3000/Tape
LMBT4401LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: KST92 PNP Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST92MTF 2D SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
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KST92
OT-23
KST92MTF
OT-23
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BAS21 SOD323
Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! , " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
BAS21,
BAS21-03W,
BAS21 SOD323
marking JSs
BAS21
BAS21 SOT23
Marking code jSs
BAS21U
JSs marking code
65 marking sot23
marking code ag
BAR63-03W
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BAS21
Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Text: BAS21. Silicon Switching Diode For high-speed switching applications High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
BAS21-03W,
BAS21U,
BAS21
BAS21-03W
BAS21U
BCW66H
E6327
SC74
bas21 infineon
DIN6784
BAS21 SOD323
JSs sot23
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V BVCES > 700V BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
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APT17
MIL-STD-202,
200mg
DS36298
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N2894AC1
-200mA
360mW
88mW/Â
2N2894AC1B
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
2N4209C1B
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Untitled
Abstract: No abstract text available
Text: MMBZ5V6AL - MMBZ33VAL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS Features Mechanical Data • Dual TVS in Common Anode Configuration • Case: SOT23 • 24W/40W Peak Power Dissipation Rating @ 1.0ms • Case Material: Molded Plastic “Green” Molding Compound.
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MMBZ33VAL
4W/40W
225mW
AEC-Q101
J-STD-020
MIL-STD-202,
42dge
DS30306
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PMBFJ111
Abstract: PMBFJ112 philips PMBFJ113 PMBFJ113 pmbfj111_112_113_
Text: PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections
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PMBFJ111;
PMBFJ112;
PMBFJ113
PMBFJ111)
sym053
PMBFJ113.
PMBFJ111
PMBFJ112
philips PMBFJ113
PMBFJ113
pmbfj111_112_113_
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PMBFJ108
Abstract: PMBFJ109 PMBFJ110 pmbfj108_109_110_
Text: PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections
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PMBFJ108;
PMBFJ109;
PMBFJ110
PMBFJ108)
sym053
PMBFJ108
PMBFJ109
PMBFJ110
pmbfj108_109_110_
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Untitled
Abstract: No abstract text available
Text: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at Case: SOT23
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MMBD3004A/C/S
100nA
J-STD-020
MIL-STD-202,
DS30353
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Untitled
Abstract: No abstract text available
Text: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns • • • High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at • Case: SOT23
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MMBD3004A/C/S
100nA
J-STD-020
MIL-STD-202,
DS30353
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smd code marking WV
Abstract: BBY39
Text: BBY39 UHF variable capacitance double diode Rev. 02 — 30 June 2004 Product data sheet 1. Product profile 1.1 General description The BBY39 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.
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BBY39
BBY39
sym032
smd code marking WV
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BB804
Abstract: smd code marking C8
Text: BB804 VHF variable capacitance double diode Rev. 03 — 1 July 2004 Product data sheet 1. Product profile 1.1 General description The BB804 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.
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BB804
BB804
sym032
smd code marking C8
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smd code marking WV
Abstract: BBY42 133-8-8
Text: BBY42 VHF variable capacitance diode Rev. 02 — 1 October 2004 Product data sheet 1. Product profile 1.1 General description The BBY42 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package.
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BBY42
BBY42
sym047
smd code marking WV
133-8-8
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