BCR108S
Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
BG3230
OT363
BCR108S
BG3230R
mosfet 2g2
marking code 4D
marking G2s
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PDF
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marking K1 sot363
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
EHA07461
OT363
OT363
marking K1 sot363
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PDF
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G2 marking
Abstract: BG3140R
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
BG3140R
OT363
G2 marking
BG3140R
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PDF
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BCR108S
Abstract: BG3230 mosfet 2g2
Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
OT363
BCR108S
BG3230
mosfet 2g2
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
OT363
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PDF
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BCR108S
Abstract: BG3130 BG3130R 3D SOT363 marking K1 sot363
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
OT363
18may
BCR108S
BG3130
BG3130R
3D SOT363
marking K1 sot363
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes
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Original
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BG3430R
OT363
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PDF
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KDS DATE CODE
Abstract: No abstract text available
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
BG3140R
OT363
KDS DATE CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
OT363
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PDF
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BCR108S
Abstract: BG3130 BG3130R
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
OT363
BCR108S
BG3130
BG3130R
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PDF
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Marking G2
Abstract: BCR108S BG3430R
Text: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes
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Original
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BG3430R
OT363
Marking G2
BCR108S
BG3430R
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PDF
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BG3430R
Abstract: Marking G2 BCR108S
Text: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range
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Original
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BG3430R
OT363
BG3430R
Marking G2
BCR108S
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PDF
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IG-14
Abstract: No abstract text available
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3123.
BG3123
BG3123R
EHA07461
OT363
IG-14
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PDF
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marking code g1s
Abstract: BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3123.
BG3123
BG3123R
OT363
marking code g1s
BCR108S
BG3123
BG3123R
mosfet tetrode
amp marking 125
marking 5 rf amp
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PDF
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AGC-10
Abstract: BCR108S BG3123 BG3123R
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3123.
BG3123
BG3123R
OT363
AGC-10
BCR108S
BG3123
BG3123R
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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PDF
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22100K
Abstract: No abstract text available
Text: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
22100K
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3123.
BG3123
VPS05604
BG3123R
EHA07461
BG3123
BG3123R*
OT363
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PDF
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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Original
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
Feb-27-2004
BG3230R
VPS05604
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PDF
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BG3140
Abstract: BG3140R VPS05604
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
VPS05604
BG3140
BG3140R
EHA07461
OT363
Feb-27-2004
BG3140
BG3140R
VPS05604
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PDF
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BG3130
Abstract: BG3130R VPS05604 3D SOT363
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3130.
VPS05604
BG3130
BG3130R
EHA07461
OT363
Feb-27-2004
BG3130
BG3130R
VPS05604
3D SOT363
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28 Silicon Switching Diode Array • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * o Package1) SOT-143 NJ - È H- «1 3 2 0- N - 0
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OCR Scan
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Q62702-A77
OT-143
CHA07008
D1SD577
a235bD
fi235b05
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PDF
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Shipping Tray
Abstract: EPAK TRAY MSA-3032 ePAK tray drawing BG3535 tray 10 x 24 BD132 B200
Text: REVISIONS REV 00 M anufacturlng S ite Marking "T ext p ro tru sio n 0,15max 322.6±0.5<L>-315,0±0,5 A>^- DESCRIPTION INITIAL RELEASE DATE APPROVED KK Thee 0 3 /0 8 /1 0 4-ND HEILES (VACUUM PICKUP CELL HL Ç— ) •C — )
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OCR Scan
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15max
MSA-3032.
BG535
BG3535
MSC17011
MSC-5922
BD132
2B4-B200
P7-310-
Shipping Tray
EPAK TRAY
MSA-3032
ePAK tray drawing
tray 10 x 24
B200
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PDF
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