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    MARKING BJW Search Results

    MARKING BJW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING BJW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSOT-23

    Abstract: AME8570AEIUBF29Z SOT-23 Package marking codes n1 transistors sot-23 2x marking sot-23 Diode SOT-23 marking 27 marking codes transistors a1 sot-23 sot-23 MARKING CODE 21 AME8570 AME8570CEETBF29Y
    Text: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,


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    AME8570 AME8570 1221-DS8570-B TSOT-23 AME8570AEIUBF29Z SOT-23 Package marking codes n1 transistors sot-23 2x marking sot-23 Diode SOT-23 marking 27 marking codes transistors a1 sot-23 sot-23 MARKING CODE 21 AME8570CEETBF29Y PDF

    AME8570AEIUBF29Z

    Abstract: en050.00.b08 TSOT-23 AME8570AEETAE26Y AME8570BEETAF44Z AME8570BEET AME8570 1AME BNGW TSOT-23 junction case
    Text: AME µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,


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    AME8570 AME8570 1221-DS8570-B AME8570AEIUBF29Z en050.00.b08 TSOT-23 AME8570AEETAE26Y AME8570BEETAF44Z AME8570BEET 1AME BNGW TSOT-23 junction case PDF

    marking 70.4

    Abstract: No abstract text available
    Text: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,


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    AME8570 AME8570 1221-DS8570-B marking 70.4 PDF

    AME8570AEIUAE29Z

    Abstract: No abstract text available
    Text: AME µProcessor Supervisory AME8570 n General Description The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds, reset time intervals, and output driver configurations, all


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    AME8570 AME8570 configur550 1221-DS8570-C AME8570AEIUAE29Z PDF

    Untitled

    Abstract: No abstract text available
    Text: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,


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    AME8570 AME8570 October2007 1221-DS8570-B PDF

    Gate Drive

    Abstract: EPA4271GE-LF marking bjw
    Text: Gate Drive Transformer ELECTRONICS INC. EPA4271GE-LF • Operating Temperature : -40°C to +85°C • Storage Temperature : -40°C to +130°C • Operating Frequency : 50 KHz and Up • Lead-Free Electrical Parameters @ 25° C Primary Inductance µH Min.


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    EPA4271GE-LF EPA4271GE-LF pieces/13" CSA4271GE-LF Gate Drive marking bjw PDF

    BJW transistor

    Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol


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    2SD2351 50mA/5mA) 100ms. 50mA/5mA -10mA, 100MHz BJW transistor SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating


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    2SD2351 50mA/5mA) 100ms. 50mA/5mA -10mA, 100MHz PDF

    marking bjw

    Abstract: No abstract text available
    Text: 1000Base-T Module ELECTRONICS INC. EPG4254JE-LF • Smallest Gigabit Magnetic Module • Guaranteed to operate with 10/100Base-TX • Ideal for Multiport 10/100Base-TX as Gigabit Solutions • Complies with or exceeds IEEE 802.3ab 1000Base-T • Suitable for Auto MDIX 10/100Base-TX Applications


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    1000Base-T EPG4254JE-LF 10/100Base-TX 10/100Base-TX 1000Base-T EPG4033-RC pieces/13â CSFG4254JE-LF marking bjw PDF

    3536aa

    Abstract: MRB 20 AME8570AEITAF26Z AME8570 AME8570AEETAF23Z sot-23 Marking B1 th308 SC70-4 V8450 704 N SOT23
    Text: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,


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    AME8570 AME8570 1221-DS8570-A 3536aa MRB 20 AME8570AEITAF26Z AME8570AEETAF23Z sot-23 Marking B1 th308 SC70-4 V8450 704 N SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMHOP Microelectronics Corp. SM1103/SM1104 300mA CMOS LDO w/ ENABLE GENERAL DESCRIPTION FEATURES The SM1103/SM1104 is a 300mA Low Dropout and Low Noise micro-power Voltage Regulator suitable for battery powered portable equipments. The SM1103/SM1104 designed stable with


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    SM1103/SM1104 300mA SM1103/SM1104 OT23-6 PDF

    QML-38534

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with NOR 5962-R139-95. 95-05-11 K. Cottongim Corrected figure 1 to move the side view of case outlines X and Z to the right side of the top view for the correct orientation. Figure 1; removed the min limit for the D dimension


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    5962-R139-95. TQDl47Dfl QML-38534 PDF

    Untitled

    Abstract: No abstract text available
    Text: S71NS-N MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16 , 128 Mb (8 Mb x 16) and pSRAM 64 Mb (4 Mb x 16) with pSRAM: 64 Mb (4 Mbx16), 32 Mb (2 Mb x 16) and 16 Mb (1 Mb x 16) ADVANCE INFORMATION Data Sheet


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    S71NS-N Mbx16) S71NS-N PDF

    Untitled

    Abstract: No abstract text available
    Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)


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    S71NS-N 16-bit) PDF

    BP511A

    Abstract: cdr01 capacitors C1206W 5122b bx563 kemet capacitors i472 kemet capacitor c1206
    Text: KEMET CERAMIC CHIP/MIL-C-55681 CAPACITOR OUTLINE DRAWINGS DIMENSIONS— MILLIMETERS AND INCHES STYLE KEMET SIZE C0DE CDR01 C D R 02 C D R 03 C D R 04 C 0805 C 1805 C1808 C1812 C D R 05 C 1825 C D R 06 CDR31 C D R 32 C DR33 C D R 34 C D R 35 C2225 C0805 C 1206


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    CHIP/MIL-C-55681 CDR01 CDR31 C1808 C1812 C2225 C0805 C1210 MIL-C-55681 BP511A cdr01 capacitors C1206W 5122b bx563 kemet capacitors i472 kemet capacitor c1206 PDF

    ADQ15

    Abstract: S71NS256P S71NS128P JEP95
    Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burstmode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit) and 16 Mb (1 Mb x 16-bit)


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    S71NS-N 16-bit) NS064N NS128N NS256N ADQ15 S71NS256P S71NS128P JEP95 PDF

    Untitled

    Abstract: No abstract text available
    Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)


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    S71NS-N 16-bit) 512Kb PDF

    Spansion NS064N

    Abstract: S71NS128P ns064n S71NS064NA0 Spansion NAND Flash DIE S29NS-N S71NS-N PSRAM* MuxpSRAM JEP95
    Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)


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    S71NS-N 16-bit) 512Kb Spansion NS064N S71NS128P ns064n S71NS064NA0 Spansion NAND Flash DIE S29NS-N PSRAM* MuxpSRAM JEP95 PDF

    S71NS128P

    Abstract: S71NS-N NS064N S29NS-N S71NS064NA0 marking bjw S71NS064NA0-RA
    Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)


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    S71NS-N 16-bit) 512Kb S71NS128P NS064N S29NS-N S71NS064NA0 marking bjw S71NS064NA0-RA PDF

    S71VS128R

    Abstract: S71VS marking bjw S71VS064R S71NS-N NS064N S29NS-N S71NS064NA0 Spansion NAND Flash S71NS064N80-RA
    Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)


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    S71NS-N 16-bit) 512Kb S71VS128R S71VS marking bjw S71VS064R NS064N S29NS-N S71NS064NA0 Spansion NAND Flash S71NS064N80-RA PDF

    s71vs128

    Abstract: S71VS064R S71VS128R mediatek Spansion NS064N S71VS256 S71VS256R NS064N NS256N S71NS064NA0
    Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)


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    S71NS-N 16-bit) 512Kb s71vs128 S71VS064R S71VS128R mediatek Spansion NS064N S71VS256 S71VS256R NS064N NS256N S71NS064NA0 PDF

    S71VS256R

    Abstract: S71VS128R
    Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)


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    S71NS-N 16-bit) 512Kb S71VS256R S71VS128R PDF

    zilog Z280

    Abstract: Z280 CPU z280 EPU
    Text: ZILOG INC blE; ]> < £ 2 iL G E m c^ fl4[]43 Q 02 S 2 1 S 351 m i l l Product Sp ecificatio n Z280 NPU Microprocessor Unit FEATURES • Designed in CMOS for low power operations. ■ Enhanced Z80 CPU instruction set that maintains object-code compatibility with Z80 microprocessor.


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    16-bit 00E5274 zilog Z280 Z280 CPU z280 EPU PDF

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


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    L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4 PDF