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    MARKING BS170 Search Results

    MARKING BS170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING BS170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


    Original     		PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor

    2N7000KL-TR1-E3

    Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 18-Jul-08 2N7000KL-TR1-E3 BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX

    bs170kl

    Abstract: No abstract text available
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		PDF 2N7000KL/BS170KL O-226AA 7000KL O-92-18RM 170KL 08-Apr-05 bs170kl

    170KL

    Abstract: BS170KL-TR1-E3 BS170KL-TR1 7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 LOGO TD Display 2N7000KL
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL BS170KL-TR1-E3 BS170KL-TR1 7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 LOGO TD Display 2N7000KL

    BS170KL

    Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL S-40247--Rev. 16-Feb-04 BS170KL 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173

    2N7000KL

    Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL 08-Apr-05 2N7000KL 170KL BS170KL-TR1 2N7000KL-TR1

    BS170RL1

    Abstract: MOSFET bs170 BS170
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk


    Original     		PDF BS170 O-226) BS170 BS170RL1 MOSFET bs170

    BS170

    Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)


    Original     		PDF BS170 O-226) o1982. BS170/D BS170 MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet

    BS170

    Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
    Text: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD


    Original     		PDF BS170 r14525 BS170/D BS170 BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1

    BS170G

    Abstract: BS170 BS170RLRAG mosfet bs170
    Text: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)


    Original     		PDF BS170G O-226) BS170/D BS170G BS170 BS170RLRAG mosfet bs170

    Untitled

    Abstract: No abstract text available
    Text: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)


    Original     		PDF BS170G BS170/D

    BS170 application note

    Abstract: BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 pin diagram of bs170 bs170 TO-92
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk


    Original     		PDF BS170 O-226) BS170/D BS170 application note BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 pin diagram of bs170 bs170 TO-92

    BS170

    Abstract: BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk


    Original     		PDF BS170 O-226) BS170/D BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92

    transistor BS170

    Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40


    Original     		PDF BS170 O-226) BS170/D transistor BS170 equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P

    equivalent of BS170

    Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capacitan02, equivalent of BS170 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING

    BS170

    Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
    Text: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J P-37993--Rev. BS170 VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix

    VQ1000J

    Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429

    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA

    2N7002 MARKING

    Abstract: markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 18-Jul-08 2N7002 MARKING markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002

    ZVN3320F

    Abstract: ZVN3320
    Text: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360


    OCR Scan     		PDF OT-23 ZVN3320F ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS13 ZVP1320F ZVN3320

    ZVN4206E

    Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
    Text: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA


    OCR Scan     		PDF OT-23 ZVN3320F BSS123 ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS138+ ZVN4206E bss123 marking sa B55123 BSS138

    MARKING bs170

    Abstract: No abstract text available
    Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170

    2N7002 marking code 72

    Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V


    OCR Scan     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000J VQ1000P BS170 S-04279-- 16-Jul-01 2N7002 marking code 72 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay