SOT23 DIODE marking CODE AV
Abstract: marking code re DIODE marking 33 marking code RF marking code RD RD SOT-23 marking code TS bar43a re BAR43C marking 724 diode
Text: BAR43 / A / C / S SCHOTTKY BARRIER DIODE BAR43 3 1 2 BAR43A 3 1 2 BAR43C 3 1 2 BAR43S 3 1 2 SOT-23 Plastic Package BAR43 Marking Code: RD BAR43A Marking Code: RE BAR43C Marking Code: RF BAR43S Marking Code: RH Absolute Maximum Ratings Ta = 25 OC Parameter
|
Original
|
BAR43
BAR43
BAR43A
BAR43C
BAR43S
OT-23
BAR43A
BAR43C
BAR43S
SOT23 DIODE marking CODE AV
marking code re
DIODE marking 33
marking code RF
marking code RD
RD SOT-23
marking code TS
bar43a re
marking 724 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF Inductors Coils Data Sheet 1 LQP02TN_02 Series 01005/0402 (inch/mm) General Film Thickness 0.1nH E-24 0.22mm Step max. Step Tight Tolerance Reflow RoHS OK c Dimensions c Packaging 0.2±0.02 Polarity Marking Code Packaging Minimum Quantity D ø180mm Paper Taping
|
Original
|
LQP02TN
180mm
20000MHz
320mA
500MHz
18000MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF Inductors Coils Data Sheet 1 LQP03TG_02 Series 0201/0603 (inch/mm) General Film Thickness 0.1nH E-12 0.33mm Step max. Step E-24 Tight Step Tolerance Reflow RoHS OK c Dimensions c Packaging 0.1 to 0.5nH 0.6 to 120nH Polarity Marking Colored Side Packaging
|
Original
|
LQP03TG
330mm
180mm
120nH
500MHz
20000MHz
08termination
|
PDF
|
A1145 transistor
Abstract: marking bbs
Text: BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss Type Marking Ordering Code Pin Configuration BAR 81 BBs 1=C Q62702Q62702-A1145 2=A 3=C Package 4=A MW-4
|
Original
|
Q62702Q62702-A1145
Feb-26-1996
A1145 transistor
marking bbs
|
PDF
|
bfy90
Abstract: No abstract text available
Text: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER
|
Original
|
BFX89
BFY90
BFX89
-65IC
800MHz
13-March
bfy90
|
PDF
|
transistor k74
Abstract: transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k
Text: IG N TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER P 40mW @5Msps, 150mW @ 50Msps P 2.5V supply voltage with 2.5V/3.3V compatiP P P P Temperature Range D Package Conditioning Marking TSA1201IF -40 C to +85 C TQFP48 Tray SA1201I TSA1201IFT -40 C to +85 C TQFP48
|
Original
|
12-BIT,
50MSPS,
150mW
150mW
50Msps
15MHz
TSA0801,
transistor k74
transistor SMD k74
smd TRANSISTOR code marking 7k
transistor k74 smd
lg dd
SMD TRANSISTOR MARKING NK
TRANSISTOR SMD MARKING CODE 8D
N7 2C SMD Transistor
transistor SMD MARKING CODE 772
smd transistor 7k
|
PDF
|
VSO05553
Abstract: marking BAr
Text: BAR 81 Silicon RF Switching Diodes 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol
|
Original
|
VSO05553
Oct-05-1999
VSO05553
marking BAr
|
PDF
|
BAR81W
Abstract: No abstract text available
Text: BAR81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT343 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAR81W
VPS05605
OT343
App10
Jul-06-2001
100MHz
BAR81W
|
PDF
|
marking 81W
Abstract: No abstract text available
Text: BAR 81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol
|
Original
|
VPS05605
OT-343
Oct-05-1999
100MHz
marking 81W
|
PDF
|
VSO05553
Abstract: No abstract text available
Text: BAR 80 Silicon RF Switching Diode 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol
|
Original
|
VSO05553
Oct-05-1999
100MHz
EHD07010
EHD07009
VSO05553
|
PDF
|
Marking AAs
Abstract: Q62702-A1084
Text: BAR 80 Silicon RF Switching Diode l l l Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code tape and reel Package Pin configuration 1 2 3 Q62702-A1084 C A 1) 4 C A MW-4 Maximum ratings
|
Original
|
Q62702-A1084
Marking AAs
Q62702-A1084
|
PDF
|
temex vco
Abstract: No abstract text available
Text: FREQUENCY VCO 1085 - 1115 MHz Voltage Controlled Oscillator – VLB 1085 - RF Specification rev-W0 Electrical Specifications Mechanical Parameters Marking Preliminary F re qu en c y VCO 1095 - 1115 MHz Voltage Controlled Oscillator – VLB 1085 - RF December 14th, 2004
|
Original
|
VLB1085
temex vco
|
PDF
|
temex vco
Abstract: No abstract text available
Text: FREQUENCY VCO 1077 - 1102 MHz Voltage Controlled Oscillator – VLB 1089 - RF Specification rev-W0 Electrical Specifications Mechanical Parameters Marking F re qu en c y VCO 1077 - 1102 MHz Voltage Controlled Oscillator – VLB 1089 - RF December 14th, 2004
|
Original
|
VLB1089
temex vco
|
PDF
|
1068 vco
Abstract: marking code 1050 Temex vlb 1068 VLB1068
Text: FREQUENCY VCO 1050 – 1086 MHz Voltage Controlled Oscillator – VLB 1068 - RF Specification rev-W0 Electrical Specifications Mechanical Parameters Marking F re qu en c y VCO 1050 - 1086 MHz Voltage Controlled Oscillator – VLB 1068 - RF December 14th, 2004
|
Original
|
VLB1068
1068 vco
marking code 1050
Temex vlb 1068
|
PDF
|
|
|
BFW92
Abstract: No abstract text available
Text: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92
|
OCR Scan
|
BFW92
BFW92
D-74025
31-Oct-97
|
PDF
|
BF970
Abstract: No abstract text available
Text: TEMIC BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50
|
OCR Scan
|
BF970
BF970
D-74025
31-Oct-97
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O D EL IM C -1 2 1 0 In d u c to rs S u rfa c e M ount, M olded FEATURES • Printed marking • Compatible with vapor phase and infrared reflow soldering • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, 2000/reel, EIA 481
|
OCR Scan
|
2000/reel,
IMC-1210
|
PDF
|
transistor MAR 543
Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91
|
OCR Scan
|
BFR91
BFR91
24-Mar-97
transistor MAR 543
transistor BFR91
IPS240
BFR91 transistor
transistor mar 839
Telefunken u 439
transistor MAR 439
|
PDF
|
BF970
Abstract: No abstract text available
Text: Temic BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters
|
OCR Scan
|
BF970
BF970
27-Feb-97
|
PDF
|
MAR 641 TRANSISTOR
Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Text: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23
|
OCR Scan
|
BFR92A/BFR92AR
BFR92A
BFR92AR
26-Mar-97
26-Mar
MAR 641 TRANSISTOR
transistor MAR 543
MAR 737 ic
mar 727
1646 IC
28B SOT-23
of ha 741 ic
MAR 737
|
PDF
|
TELEFUNKEN* U 413 B
Abstract: MAR 641 TRANSISTOR transistor MAR 439
Text: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T
|
OCR Scan
|
BFR96T
BFR96T
26-Mar-97
TELEFUNKEN* U 413 B
MAR 641 TRANSISTOR
transistor MAR 439
|
PDF
|
BFR92a MARKING P2
Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Text: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23
|
OCR Scan
|
BFR92A/BFR92AR
BFR92A
BFR92AR
26-Mar-97
BFR92a MARKING P2
MAR 641 TRANSISTOR
sot-23 marking RIP
ha 1452
|
PDF
|
MARKING a3 SOT-23
Abstract: No abstract text available
Text: Temic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For selfoscillating RF m ixer stages 1 R R E 3 1— 1 BF569 Marking: LH Plastic case SOT 23
|
OCR Scan
|
BF569/BF569R
BF569
BF569R
llk40
D-74025
31-Oct-97
MARKING a3 SOT-23
|
PDF
|
MMBR2857
Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)
|
OCR Scan
|
OT-23
MMBR930
BFR92
BFR92A
BFR93
BFR93A
MMBR931
MMBR2060
MMBR5179
MMBR920
MMBR2857
MMBR2857 MOTOROLA
MMBF4860
MMBR5031
MMBFU310
BFS17 E1
|
PDF
|
