Untitled
Abstract: No abstract text available
Text: CAT3636 6-Channel Fractional LED Driver in TQFN 3x3 Description http://onsemi.com TQFN−16 HV3 SUFFIX CASE 510AD LEDC2 NC C1− LEDB1 C1+ VIN C2+ LEDB2 VOUT LEDC1 Top View MARKING DIAGRAMS JAAA AXXX YWW JAAR AXXX YWW JAAA = CAT3636HV3−T2 JAAR = CAT3636HV3−GT2
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CAT3636
510AD
CAT3636HV3â
CAT3636/D
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Untitled
Abstract: No abstract text available
Text: DB2S308 Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features Low forward voltage VF Short reverse recovery time trr Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C2
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DB2S308
UL-94
DB2S30800L
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C2 marking code
Abstract: No abstract text available
Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2312DS
O-236
OT-23)
S-21090--Rev.
01-Jun-02
C2 marking code
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Untitled
Abstract: No abstract text available
Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2312DS
O-236
OT-23)
S-03082--Rev.
12-Feb-01
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Untitled
Abstract: No abstract text available
Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2312DS
O-236
OT-23)
S-02538--Rev.
20-Nov-00
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FDP075N15
Abstract: FDP075N15A FDB075N15A
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has
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FDP075N15A
F102/FDB075N15A
FDB075N15A
FDB075N15A
FDP075N15
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Untitled
Abstract: No abstract text available
Text: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA44N30
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Untitled
Abstract: No abstract text available
Text: FSB50550A, FSB50550AT Motion SPM 5 Series Features General Description • 500 V RDS on = 1.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50550A and FSB50550AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for
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FSB50550A,
FSB50550AT
FSB50550A
FSB50550AT
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Untitled
Abstract: No abstract text available
Text: FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET® Series Features General Description • UL Certified No. E209204 FSB50660SF and FSB50660SFT are a Motion SPM® 5 SuperFET® Series Based on Super Junction MOSFET SuperFET Technology as a Compact Inverter Solution
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FSB50660SF,
FSB50660SFT
E209204
FSB50660SF
FSB50660SFT
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FSB50325
Abstract: No abstract text available
Text: FSB50325A, FSB50325AT Motion SPM 5 Series Features General Description • 250 V RDS on = 1.7 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50325A and FSB50325AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for
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FSB50325A,
FSB50325AT
FSB50325A
FSB50325AT
FSB50325
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Untitled
Abstract: No abstract text available
Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002VC/VAC
AEC-Q101
OT563
J-STD-020
MIL-STD-202,
DS30639
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PDF
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Untitled
Abstract: No abstract text available
Text: FSB50250AS Motion SPM 5 Series Features General Description • 500 V RDS on = 3.8 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50250AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
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FSB50250AS
FSB50250AS
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Untitled
Abstract: No abstract text available
Text: FSB50450A Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450A is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
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FSB50450A
FSB50450A
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Untitled
Abstract: No abstract text available
Text: FSB50760SF, FSB50760SFT Motion SPM 5 SuperFET® Series Features General Description • UL Certified No. E209204 FSB50760SF and FSB50760SFT are a Motion SPM® 5 SuperFET® Series Based on Super Junction MOSFET SuperFET Technology as a Compact Inverter Solution
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FSB50760SF,
FSB50760SFT
E209204
FSB50760SF
FSB50760SFT
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Untitled
Abstract: No abstract text available
Text: FSB50550AS Motion SPM 5 Series Features General Description • 500 V RDS on = 1.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50550AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
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FSB50550AS
FSB50550AS
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diodes code va
Abstract: VA MARKING
Text: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002VC/VAC
2N7002V/VA
AEC-Q101
OT-563
OT-563
J-STD-020D
DS30448
diodes code va
VA MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: FSB50450AS Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
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FSB50450AS
FSB50450AS
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FSB50825A
Abstract: No abstract text available
Text: FSB50825AS Motion SPM 5 Series Features General Description • 250 V RDS on = 0.45 Max FRFET MOSFET 3Phase Inverter Including HVICs FSB50825AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
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FSB50825AS
FSB50825AS
FSB50825A
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FCP380N60E
Abstract: No abstract text available
Text: SupreFET II FCP380N60E / FCPF380N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
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FCP380N60E
FCPF380N60E
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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2N7002VC/VAC
AEC-Q101
OT563
J-STD-020
DS30639
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PDF
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TG2202F
Abstract: No abstract text available
Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) v C2 out MARKING gnd Type name
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OCR Scan
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TG2202F
961001EBC1
907GHz
TG2202F
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PDF
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TG2202F
Abstract: No abstract text available
Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING
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OCR Scan
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TG2202F
961001EAC1
TG2202F
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING
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OCR Scan
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TG2202F
0910EBC1
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT T r i ? ? n ? GaAs MONOLITHIC F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING
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OCR Scan
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TG2202F
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PDF
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