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    MARKING C3 SOT 353 Search Results

    MARKING C3 SOT 353 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING C3 SOT 353 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking R1E SC-70

    Abstract: SOT-23-5 R1A marking code r1e sot23 sot-23-5 525 marking marking R1F NCP4671DSN06T1G marking R1E marking C3 sot23-5 say marking code sot 23 SOT 23 r1a
    Text: NCP4671 400 mA, Dual Rail Ultra Low Dropout Linear Regulator The NCP4671 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power for the LDO control circuitry provided via the Vbias pin from the main power path (Vin) offers


    Original     		NCP4671 NCP4671 SC-70, SC-70 NCP4671/D marking R1E SC-70 SOT-23-5 R1A marking code r1e sot23 sot-23-5 525 marking marking R1F NCP4671DSN06T1G marking R1E marking C3 sot23-5 say marking code sot 23 SOT 23 r1a PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.


    Original     		L1SS226LT1G PDF

    smd transistor marking z3

    Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z3 SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2 PDF

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363 PDF

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L PDF

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D PDF

    marking code r1e sot23

    Abstract: transistor BD 263 marking R1E SC-70 ncp46 marking c3 sot 353 XDFN SC-70 dual regulator NCP4671DMX06TCG
    Text: NCP4671 400 mA, Dual Rail Ultra Low Dropout Linear Regulator The NCP4671 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power for the LDO control circuitry provided via the Vbias pin from the main power path (Vin) offers


    Original     		NCP4671 SC-70, NCP4671/D marking code r1e sot23 transistor BD 263 marking R1E SC-70 ncp46 marking c3 sot 353 XDFN SC-70 dual regulator NCP4671DMX06TCG PDF

    Untitled

    Abstract: No abstract text available
    Text: NCP4671 400 mA, Dual Rail Ultra Low Dropout Linear Regulator The NCP4671 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power for the LDO control circuitry provided via the Vbias pin from the main power path (Vin) offers


    Original     		NCP4671 NCP4671 NCP4671/D PDF

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1G126 353/SC marking CODE W2D marking w2d PDF

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D PDF

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 PDF

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G02 353/SC V = Device Code PDF

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G00 353/SC V = Device Code PDF

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08 PDF

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A PDF

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code PDF

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code PDF

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 PDF

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode PDF

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004 PDF

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1G00 MC74HC 353/SC AND8004/D V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 PDF

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3 PDF

    T138A

    Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
    Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1GU04 MC74HC 353/SC T138A U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code PDF

    TRANSISTOR BC 157

    Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
    Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34 PDF