MMIC SOT 89 marking CODE
Abstract: MMIC "SOT 89" marking MMIC "SOT89" marking CODE h AG103-G RF transistor marking IN SOT-89 C5 MARKING CODE SOT-89 AG103 marking 25 mmic sot-89 SOT c5 87 marking rf SOT89
Text: AG103 The Communications Edge TM High Dynamic Range Gain Block Product Features • • • • • • • • 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 Ω Lead-free/Green/RoHScompliant SOT-89 Package
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AG103
OT-89
AG103
1-800-WJ1-4401
MMIC SOT 89 marking CODE
MMIC "SOT 89" marking
MMIC "SOT89" marking CODE h
AG103-G
RF transistor marking IN SOT-89
C5 MARKING CODE SOT-89
marking 25 mmic sot-89
SOT c5 87
marking rf SOT89
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marking L270
Abstract: MMIC "SOT 89" marking 12
Text: AG103 The Communications Edge TM Product Information High Dynamic Range Gain Block Product Features x x x x x x x x 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 : Lead-free/Green/RoHScompliant SOT-89 Package
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Original
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AG103
OT-89
AG103
1-800-WJ1-4401
marking L270
MMIC "SOT 89" marking 12
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Untitled
Abstract: No abstract text available
Text: AG103 The Communications Edge TM High Dynamic Range Gain Block Product Features • • • • • • • • • 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply SOT-89 SMT Package Internally matched to 50 Ω
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AG103
OT-89
AG103
1-800-WJ1-4401
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MMIC "SOT 89" marking
Abstract: 103G AG103 AG103-G AG103-PCB JESD22-A114
Text: AG103 Product Information High Dynamic Range Gain Block Product Features Product Description Functional Diagram 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 Ω Lead-free/Green/RoHScompliant SOT-89 Package
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AG103
OT-89
AG103
1-800-WJ1-4401
MMIC "SOT 89" marking
103G
AG103-G
AG103-PCB
JESD22-A114
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PDF
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Untitled
Abstract: No abstract text available
Text: AG103 The Communications Edge TM Product Information High Dynamic Range Gain Block Product Features x x x x x x x x 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 : Lead-free/Green/RoHScompliant SOT-89 Package
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Original
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AG103
OT-89
AG103
1-800-WJ1-4401
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PDF
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946 SOT89
Abstract: AG103-G MMIC "SOT 89" marking 103G AG103 AG103-PCB JESD22-A114 REGULATOR SOT89 marking l270
Text: AG103 The Communications Edge TM Product Information High Dynamic Range Gain Block Product Features x x x x x x x x 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 : Lead-free/Green/RoHScompliant SOT-89 Package
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Original
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AG103
AG103
OT-89
1-800-WJ1-4401
946 SOT89
AG103-G
MMIC "SOT 89" marking
103G
AG103-PCB
JESD22-A114
REGULATOR SOT89
marking l270
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Untitled
Abstract: No abstract text available
Text: RF Jumpers - LISCA LISCA products are designed to meet customer specifications, delivery requirements and budgets. LISCA – Low Loss and Low Intermodulation Soldered Corrugated Cable Assembly. 84 HUBER+SUHNER Application This product line is designed to be used:
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mrf8372
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics
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MRF837/D
MRF837
MRF8372,
MRF837
MRF837/D*
mrf8372
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transistor NF j1 marking code
Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39
Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel
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PD84006L-E
2002/95/EC
PD84006L-E
transistor NF j1 marking code
EEVHB1V100P
EXCELDRC35C
J-STD-020B
UHF rfid reader
grm39
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13786
Abstract: L1320
Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel
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PD84006L-E
2002/95/EC
PD84006L-E
13786
L1320
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PD85004
Abstract: PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label
Text: PD85004 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel
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PD85004
2002/95/EC
OT-89
PD85004
PD85004 ST
3214W-1-103E
EEVHB1V100P
EXCELDRC35C
GRM39-X7R103K50C560
J-STD-020B
PD84002
marking c7 sot-89
marking code murata label
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
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ferroxcube 56-590-65
Abstract: MRF8372 equivalent macro-X ceramic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics
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OCR Scan
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MRF8372
2-J16
MRF837
MRF8372,
ferroxcube 56-590-65
MRF8372 equivalent
macro-X ceramic
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freescale semiconductor body marking
Abstract: ML200C marking c5 Z3 marking
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
OT-89
freescale semiconductor body marking
ML200C
marking c5
Z3 marking
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iso iec 7816-2
Abstract: CCM02-F503 F844T CCM02-F844B LFT CCM02-2504LFT CCM02-F794LFT F794LFT CCM02-F844B CCM02-F844LFT
Text: CCM02 Series Features Typical Applications • Operating life 500,000 cycles • Transaction • Insertion force 40N • Identification • EMV • POS • PCI & PCI ready Full Size • Card detection sealed switch Mechanical Contact Electrical Data Number of Contacts
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CCM02
50m/s2
F844T
iso iec 7816-2
CCM02-F503
CCM02-F844B LFT
CCM02-2504LFT
CCM02-F794LFT
F794LFT
CCM02-F844B
CCM02-F844LFT
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motorola 8372
Abstract: 8372 motorola
Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics
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MRF8372/D
MRF8372
MRF8372R1,
MRF8372/D
motorola 8372
8372 motorola
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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iso iec 7816-2
Abstract: CCM02-F796 C-CM02-E50 CCM02-F844LFT
Text: smartCard2011_6.0.qxd:2002 CCM Catalog.qxd 5/16/11 4:05 PM Page 12 CCM02 Series Features Typical Applications • Operating life 500,000 cycles • Transaction • Insertion force 40N • Identification • EMV • POS • PCI & PCI ready Full Size • Card detection sealed switch
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CCM02
50m/s2
F844T
iso iec 7816-2
CCM02-F796
C-CM02-E50
CCM02-F844LFT
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Untitled
Abstract: No abstract text available
Text: Markets TABLE OF CONTENTS WW-SSCB06 replaces SA101N16J-NL PAN -S TEE L S y st em O v er vie w PAN-STEEL System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .A1-A6
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WW-SSCB06
SA101N16J-NL)
B1-B10
SA-TM03CB02A
SA-NCCB04
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AC04 motorola
Abstract: Motorola MARKING b27 CP-14 CP15 CP141
Text: Data Sheet C-5 NETWORK PROCESSOR SILICON REVISION D0 C5NPD0-DS/D Rev 04 Data Sheet C-5 Network Processor Silicon Revision D0 C5NPD0-DS/D Rev 04 Copyright 2002 Motorola, Inc. All rights reserved. No part of this documentation may be reproduced in any form or by any means or used to make any derivative work
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OC-12
AC04 motorola
Motorola MARKING b27
CP-14
CP15
CP141
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Untitled
Abstract: No abstract text available
Text: Data Sheet C-5 NETWORK PROCESSOR Freescale Semiconductor, Inc. SILICON REVISION D0 C5NPD0-DS/D Rev 04 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Data Sheet C-5 Network Processor Silicon Revision D0 C5NPD0-DS/D Rev 04 Freescale Semiconductor, Inc.
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variable resistor 500
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest
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MW4IC001
MW4IC001NR4
MW4IC001MR4
variable resistor 500
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Untitled
Abstract: No abstract text available
Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel
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Original
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PD84006L-E
2002/95/EC
PD84006L-E
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PDF
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PD84002
Abstract: PD85006L-E smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR
Text: PD85006L-E RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european
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PD85006L-E
2002/95/EC
PD85006L-E
PD84002
smd transistor marking C14
SMD diode marking L39
3214W-1-103E
EXCELDRC35C
J-STD-020B
PD85
TRANSISTOR AO SMD MARKING
0603 footprint FERRITE BEAD INDUCTOR
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