RFMD RF2048
Abstract: No abstract text available
Text: RF2048 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features MARKING - C8 SI GN S DC to 8000MHz Operation Internally matched Input and Output 12dB Small Signal Gain +25dBm Output IP3
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RF2048
RF2048
RF204X
DS070403
RFMD RF2048
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transistor 56B marking
Abstract: BC857B PNP marking c8 transistor
Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts CURRENT 330 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
BC857
BC858
BC859
-100mA
BC846/BC847/BC848/BC849
2002/95/EC
OT-23
MIL-STD-750,
BC856A
transistor 56B marking
BC857B PNP
marking c8 transistor
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transistor 56B marking
Abstract: marking c8 transistor MARKING C8 MARKING bc847 SOT-23
Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
BC857
BC858
BC859
-100mA
BC846/BC847/BC848/BC849
OT-23
MIL-STD-750,
BC856A
BC856B
transistor 56B marking
marking c8 transistor
MARKING C8
MARKING bc847 SOT-23
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Untitled
Abstract: No abstract text available
Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
BC857
BC858
BC859
OT-23
-100mA
BC846/BC847/BC848/BC849
2002/95/EC
IEC61249
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c858
Abstract: BC856R
Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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Original
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BC856
BC857
BC858
BC859
-100mA
BC846/BC847/BC848/BC849
2002/95/EC
IEC61249
OT-23
OT-23
c858
BC856R
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smd transistor marking z3
Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090AR3
smd transistor marking z3
smd transistor marking j6
J585 mosfet
smd transistor marking z8
smd transistor z4
smd transistor marking mf
capacitor philips
Z9 TRANSISTOR SMD
J216
transistor 6 pin SMD Z2
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SMD Transistor z6
Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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GSM1930
MRF18060BLSR3
SMD Transistor z6
transistor SMD Z2
Transistor smd Z3
J344
smd transistor marking z3
transistor 6 pin SMD Z2
MOSFET marking Z5
transistor Z6
SMD z6
SMD TRANSISTOR MARKING Z2
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j511
Abstract: No abstract text available
Text: TQM879028 0.7−4.0 GHz ½ W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure • Repeaters • LTE / WCDMA / CDMA 24 Pin 4 x 4 mm Leadless SMT Package Product Features NC DSA Out NC NC Amp2 In NC 23 22 21 20 19 NC 1 18
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TQM879028
j511
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C3 1.2AGHZ
Abstract: No abstract text available
Text: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package 26 24 23 22 21 GND 33 20 GND VDD 34 19 VDD VDD 35 GND 36 GND BIAS BIAS 18 VDD 17 GND 37 16 GND
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TAT8804D1H
C3 1.2AGHZ
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0805 capacitor 10 pf
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
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MRF9080LR3
MRF9080LSR3
0805 capacitor 10 pf
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Untitled
Abstract: No abstract text available
Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V
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TA4500F
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10ACPR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010LR1
MRF21010LSR1
10ACPR
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Untitled
Abstract: No abstract text available
Text: TQM879026 0.7-4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure • Repeaters • LTE / WCDMA / CDMA 24 Pin 4x4 mm leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking
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TQM879026
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MURATA GRM15
Abstract: No abstract text available
Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V
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TA4500F
MURATA GRM15
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PHILIPS capacitors 0.1 mf
Abstract: Transistor t 2 smd motorola
Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
PHILIPS capacitors 0.1 mf
Transistor t 2 smd motorola
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smd transistor marking j2
Abstract: Transistor z1
Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
smd transistor marking j2
Transistor z1
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smd transistor marking j6
Abstract: transistor 6 pin SMD Z2 smd transistor marking j8 SMD Transistor z6 transistor J585 transistor smd z9 C5 MARKING TRANSISTOR TRANSISTOR Z4 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 LIFETIME BUY Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090AR3
MRF18090A
smd transistor marking j6
transistor 6 pin SMD Z2
smd transistor marking j8
SMD Transistor z6
transistor J585
transistor smd z9
C5 MARKING TRANSISTOR
TRANSISTOR Z4
SMD transistor 2x sot 23
TRANSISTOR SMD 2X K
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060B
GSM1930
MRF18060BLSR3
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smd transistor marking z3
Abstract: smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
smd transistor marking z3
smd transistor marking j8
MOSFET marking Z4
transistor 6 pin SMD Z2
smd transistor marking z8
freescale semiconductor body marking
smd transistor marking j6
Z9 TRANSISTOR SMD
465B
MRF18090A
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TLX8-0300
Abstract: transistor J585
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
TLX8-0300
transistor J585
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transistor marking PB C8
Abstract: NI-780S SMD transistor 2x sot 23
Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060B
GSM1930
MRF18060BLSR3
transistor marking PB C8
NI-780S
SMD transistor 2x sot 23
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage
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MW4IC915MB/GMB
MW4IC915MBR1
MW4IC915GMBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
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gilbert cell mixer
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRFIC0931 The MRFIC Line Balanced Transmit Mixer The MRFIC0931 is a balanced Gilbert cell mixer with LO buffer amplifier intended for transmit upmixer application. The device is usable for Industrial,
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OCR Scan
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MRFIC0931
MRFIC0931
MRFIC0931R2
1000pF
gilbert cell mixer
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