RFMD RF2048
Abstract: No abstract text available
Text: RF2048 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features MARKING - C8 SI GN S DC to 8000MHz Operation Internally matched Input and Output 12dB Small Signal Gain +25dBm Output IP3
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RF2048
RF2048
RF204X
DS070403
RFMD RF2048
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smd transistor marking z3
Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090AR3
smd transistor marking z3
smd transistor marking j6
J585 mosfet
smd transistor marking z8
smd transistor z4
smd transistor marking mf
capacitor philips
Z9 TRANSISTOR SMD
J216
transistor 6 pin SMD Z2
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SMD Transistor z6
Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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GSM1930
MRF18060BLSR3
SMD Transistor z6
transistor SMD Z2
Transistor smd Z3
J344
smd transistor marking z3
transistor 6 pin SMD Z2
MOSFET marking Z5
transistor Z6
SMD z6
SMD TRANSISTOR MARKING Z2
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CGR0218Z
Abstract: CGR-0218Z CGR0218ZSR CGA6618 CGR0218ZSB CGR0218ZSQ CGR0218ZTR13 CGR0218ZTR7 RF MICRO DEVICES SOIC-8
Text: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
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CGR-0218Z
210MHz
CGR-0218Z
DS091015
CGR0218ZSB
CGR0218ZSQ
CGR0218ZSR
CGR0218Z
CGR0218ZSR
CGA6618
CGR0218ZSB
CGR0218ZSQ
CGR0218ZTR13
CGR0218ZTR7
RF MICRO DEVICES SOIC-8
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Untitled
Abstract: No abstract text available
Text: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
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CGR-0218Z
210MHz
CGR-0218Z
DS091015
CGR0218ZSB
CGR0218ZSQ
CGR0218ZSR
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10ACPR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010LR1
MRF21010LSR1
10ACPR
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Untitled
Abstract: No abstract text available
Text: CGA-1518Z CGA-1518Z Push-Pull 50MHz to 1000MHz High Linearity InGaP HBT Amplifier PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGA-1518Z is a high performance InGaP HBT MMIC Amplifier. Designed
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CGA-1518Z
50MHz
1000MHz
1000MHz
CGA-1518Z
DS091110
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smd transistor marking j8
Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090BR3
MRF18090BSR3
smd transistor marking j8
smd transistor marking j6
transistor J585
smd transistor marking mf
transistor smd z3
smd transistor marking z8
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cdma800
Abstract: DCS1800 GSM900 RF3809 RF3809PCK-410 RF3809PCK-411 RF3809PCK-412 DCS-1800MHz RF3809PCK-415
Text: RF3809 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications
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RF3809
RF3809
RF3809415
cdma800
DCS1800
GSM900
RF3809PCK-410
RF3809PCK-411
RF3809PCK-412
DCS-1800MHz
RF3809PCK-415
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Untitled
Abstract: No abstract text available
Text: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It
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RF5187
14GHz
RF5187
2140MHz
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MARKING HBT
Abstract: 0610-12
Text: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically
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RF3806
RF3806
UMTS2100
MARKING HBT
0610-12
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Untitled
Abstract: No abstract text available
Text: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It
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RF5187
14GHz
RF5187
2140MHz
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rf power amplifier circuit diagram with pcb layout
Abstract: UMTS2100
Text: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically
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RF3806
RF3806
UMTS2100
rf power amplifier circuit diagram with pcb layout
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UMTS transceiver
Abstract: No abstract text available
Text: RF3809 Preliminary GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications
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RF3809
RF3809
accS22
RF3809415
UMTS transceiver
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Untitled
Abstract: No abstract text available
Text: RF3807 Preliminary GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, UMTS, and WLAN Transceiver Applications
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RF3807
RF3807
RF3807415
2140MHz
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Untitled
Abstract: No abstract text available
Text: RF3809 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications
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RF3809
RF3809
RF3809415
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Untitled
Abstract: No abstract text available
Text: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers
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RF2048
RF2048
8000MHz.
RF204X
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RF3807
Abstract: DCS1800 GSM900 PCS1900 RF3807PCK-410 RF3807PCK-411 RF3807PCK-412 UMTS2100 RF3807PCK-415 banana jack footprint
Text: RF3807 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, UMTS, and WLAN Transceiver Applications
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RF3807
RF3807
RF3807415
2140MHz
DCS1800
GSM900
PCS1900
RF3807PCK-410
RF3807PCK-411
RF3807PCK-412
UMTS2100
RF3807PCK-415
banana jack footprint
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smd transistor marking z3
Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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GSM1805
MRF18060AR3
MRF18060ALSR3
smd transistor marking z3
SMD Transistor z6
smd transistor z4
marking Z6 Capacitance
smd transistor marking z1
Transistor z1
SMD marking Z4
transistor SMD Z2
SMD TRANSISTOR MARKING Z2
transistor 6 pin SMD Z2
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Untitled
Abstract: No abstract text available
Text: RF3800 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Driver for 450MHz and 850MHz Basestation • PA Stage for Commercial Wireless Infrastructure Amplifiers Product Description -A- Pin 1 0.005 A The RF3800 is specifically designed for wireless infrastructure applications at 450MHz and 850MHz. Using a
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RF3800
450MHz
850MHz
RF3800
850MHz.
EIA-481.
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msl 9350
Abstract: jack P4 GSM900 RF3802 RF3802PCBA-410 RF3802PCBA-411 marking code c45 23 C4833
Text: RF3802 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Transmitter Applications
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RF3802
RF3802
EIA-481.
msl 9350
jack P4
GSM900
RF3802PCBA-410
RF3802PCBA-411
marking code c45 23
C4833
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Untitled
Abstract: No abstract text available
Text: RF3800 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Driver for 450MHz and 850MHz Basestation • PA Stage for Commercial Wireless Infrastructure Amplifiers Product Description -A- Pin 1 0.005 A The RF3800 is specifically designed for wireless infrastructure applications at 450MHz and 850MHz. Using a
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RF3800
450MHz
850MHz
RF3800
850MHz.
EIA-481.
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0805 capacitor 10 pf
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
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MRF9080LR3
MRF9080LSR3
0805 capacitor 10 pf
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1800mhz rf frequency power amplifier circuit
Abstract: RF2126 PCBA
Text: RF2126 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems
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RF2126
RF2126
1800MHz
2500MHz.
2450MHz
1800mhz rf frequency power amplifier circuit
RF2126 PCBA
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