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    MARKING CG SOT23 Search Results

    MARKING CG SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING CG SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCX70L

    Abstract: BCX70
    Text: UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 1 CG 2 3 SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70L ABSOLUTE MAXIMUM RATINGS Ta = 25℃ unless otherwise noted PARAMETER Collector-Base Voltage


    Original     		PDF BCX70 OT-23 BCX70L QW-R206-080 BCX70L BCX70

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone


    Original     		PDF TF2123 TF2123 TF2123L-xx-AE3-R TF2123G-xx-AE3-R TF2123L-xx-AN3-R TF2123G-xx-AN3-R TF2123L-xx-AQ3-R TF2123G-xx-AQ3-R OT-23 OT-523

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS „ DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone


    Original     		PDF TF202 TF202 TF202L-x-AE3-R TF202G-x-AE3-R TF202L-x-AN3-R TF202G-x-AN3-R TF202L-x-AC3-R TF202G-x-AC3-R TF202L-x-A3C-R TF202G-x-A3C-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone


    Original     		PDF TF202 TF202 TF202L-x-AE3-R TF202G-x-AE3-R TF202L-x-AN3-R TF202G-x-AN3-R TF202L-x-AC3-R TF202G-x-AC3-R TF202L-x-A3C-R TF202G-x-A3C-R

    CAPACITOR MICROPHONE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone


    Original     		PDF TF2123 TF2123 TF2123G-xx-AE3-R TF2123G-xx-AN3-R TF2123G-xx-AQ3-R TF2123L-xx-AE3-R OT-23 OT-523 OT-723 QW-R206-106 CAPACITOR MICROPHONE

    SOT-113S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone


    Original     		PDF TF202 TF202 TF202G-x-AE3-R TF202G-x-AN3-R TF202G-x-AC3-R TF202L-x-A3C-R TF202G-x-A3C-R TF202G-x-AQ3-R QW-R210-001 SOT-113S

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		PDF AEC-Q101 LBAS70LT1G S-LBAS70LT1G BAS70 LBAS70LT1G S-LBAS70LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		PDF LBAS70LT1G S-LBAS70LT1G AEC-Q101 BAS70 LBAS70LT1G S-LBAS70LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		PDF AEC-Q101 LBAS70LT1G S-LBAS70LT1G BAS70 LBAS70LT1G S-LBAS70LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION


    Original     		PDF LBAS70LT1G BAS70 LBAS70LT3G LBAS70-04LT1G LBAS70-04ltage LBAS70LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70XLT1G Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for


    Original     		PDF LBAS70XLT1G BAS70 LBAS70LT1G LBAS70LT3G LBAS70-04LT1G LBAS70-04LT3G OT-23

    BAS70

    Abstract: BAS70-04 LBAS70-06LT1G
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION


    Original     		PDF LBAS70LT1G BAS70 LBAS70LT3G LBAS70-04LT1G LBAS70-04everse LBAS70LT1G OT-23 BAS70-04 LBAS70-06LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		PDF LBAS70LT1G S-LBAS70LT1G AEC-Q101 BAS70 LBAS70LT1G S-LBAS70LT1G OT-23

    marking JC

    Abstract: 2SC2735 600 marking
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2735 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC2735 OT-23 marking JC 2SC2735 600 marking

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for


    Original     		PDF LBAS70XLT1G LBAS70LT1G LBAS70LT3G LBAS70-04LT1G LBAS70-04LT3G LBAS70-05LT1G

    C32F

    Abstract: marking C32R C32K marking code C32f MARKING CODE CGK CG5 marking C325 marking CGK sn74lvc1g32dry2 SCES219R
    Text: SN74LVC1G32 www.ti.com SCES219R – APRIL 1999 – REVISED JUNE 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation


    Original     		PDF SN74LVC1G32 SCES219R 24-mA 000-V A114-A) A115-A) C32F marking C32R C32K marking code C32f MARKING CODE CGK CG5 marking C325 marking CGK sn74lvc1g32dry2 SCES219R

    Untitled

    Abstract: No abstract text available
    Text: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.


    Original     		PDF AIC1896 AIC1896 200mA

    C32F

    Abstract: No abstract text available
    Text: SN74LVC1G32 www.ti.com SCES219Q – APRIL 1999 – REVISED JANUARY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation


    Original     		PDF SN74LVC1G32 SCES219Q 24-mA 000-V A114-A) A115-A) C32F

    30255

    Abstract: qSOT-23
    Text: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching


    OCR Scan     		PDF b3b72SS BCW66F BCW66G BCW66H b3b725S 30255 qSOT-23

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA


    OCR Scan     		PDF bbS3T31 DD3Sfi62 PMBT5551

    MMBTA05

    Abstract: MMBTA06 MMBTA55 MMBTA56 marking K2H
    Text: MMBTA55 / MMBTA56 TRANSYS ELECTRONICS PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fcl TOP VIEW


    OCR Scan     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23, MIL-STD-202, MMBTA56 OT-23 MMBTA06 marking K2H

    "Marking k2" mmic

    Abstract: TLX-9-0150-CH
    Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain


    OCR Scan     		PDF 950MHz 85GHz Q68000-A8887 200MHz "Marking k2" mmic TLX-9-0150-CH

    Diodes Marking K7

    Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 Diodes Marking K7 Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23

    Diodes Marking K6

    Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


    OCR Scan     		PDF OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING