digital transistor array
Abstract: marking 702 sot363
Text: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration
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OT-363
digital transistor array
marking 702 sot363
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lr1551
Abstract: SOT363-6 003 SOT363 SOT363 6
Text: Leshan Radio Co ., Ltd 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 LR1551 Description Features Wide Power Supply Range: 1.8V to 5.5V The LR1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an
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OT363
LR1551
LR1551
300MHz
10MHz
300MHz
OT363-6)
OT363-6
650TYP
525REF
SOT363-6
003 SOT363
SOT363 6
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SOT363-6
Abstract: BL1551 SOT363 6 003 SOT363 marking CL SOT363 sot363-6 marking SOT-363-6
Text: BL1551—Single SPDT Analog Switch 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 Description Features Wide Power Supply Range: 1.8V to 5.5V The BL1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an
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BL1551--Single
OT363
BL1551
300MHz
10MHz
300MHz
OT363-6)
OT363-6
650TYP
SOT363-6
SOT363 6
003 SOT363
marking CL SOT363
sot363-6 marking
SOT-363-6
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74LVC2G06DW-7
Abstract: No abstract text available
Text: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V
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74LVC2G06
74LVC2G06
OT363
OT26/363
DS35161
74LVC2G06DW-7
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Untitled
Abstract: No abstract text available
Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, “Green” Molding Compound, Ultra-Small Surface Mount Package
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MMDT3904
OT363
J-STD-020
AEC-Q101
MIL-STD202,
DS30088
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Untitled
Abstract: No abstract text available
Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
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MMDT3904
OT363
J-STD-020
MIL-STD202,
AEC-Q101
DS30088
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Untitled
Abstract: No abstract text available
Text: D5V0F4U6S 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • IEC 61000-4-2 ESD : Air ±15kV, Contact ±8kV 4 Channels of ESD Protection Low Channel Input Capacitance of 0.5pF Typical Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL
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OT363
IEEE1394,
J-STD-020
DS35495
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
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2N7002DWA
OT363
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the
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2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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2N7002DWA
OT363
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data • Fast Switching Speed • • Ultra-Small Surface Mount Package • • For General Purpose Switching Applications Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.
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MMBD4148TW
BAS16TW
OT363
J-STD-020D
MIL-STD-202,
DS30154
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Untitled
Abstract: No abstract text available
Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
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DMN66D0LDW
OT363
AEC-Q101
DS31232
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Untitled
Abstract: No abstract text available
Text: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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MMDT2907A
OT363
J-STD-020
AEC-Q101
MIL-STD202,
DS30109
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15KV
Abstract: diode sot363
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
OT363
L02ESD5V0D6-5
OT363
100mV
15KV
diode sot363
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BD5 diode
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
BD5 diode
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
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Untitled
Abstract: No abstract text available
Text: DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • BVceo > 40V IC = 200mA high Collector Current • • • Pair of NPN transistors that are intrinsically matched Note 1 2% Matching on Current Gain (hFE) •
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DMMT3904W
OT363
200mA
J-STD-020
MIL-STD-202,
DS30311
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Untitled
Abstract: No abstract text available
Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V Case: SOT363 IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.
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DSS8110Y
OT363
J-STD-020
200mV
DSS9110Y)
MIL-STD-202,
DS31679
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BC847PN
Abstract: No abstract text available
Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363
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BC847PN
OT363
J-STD-020
MIL-STD-202,
DS30278
BC847PN
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BC847B
Abstract: No abstract text available
Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363
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BC847PN
OT363
J-STD-020
MIL-STD-202,
DS30278
BC847B
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aurix
Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
726-ESD3V3U1U02LRHE6
ESD3V3U1U-02LRH
E6327
aurix
XPOSYS
teaklite
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Untitled
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
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L02ESD5V0D6-5
Abstract: 15KV diode sot363
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
OT363
L02ESD5V0D6-5
OT363
15KV
diode sot363
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