VBUS051BD-HD1
Abstract: LLP1006-2L VBUS051BD esdprotection
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package
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VBUS051BD-HD1
LLP1006-2L
18-Jul-08
VBUS051BD-HD1
VBUS051BD
esdprotection
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Untitled
Abstract: No abstract text available
Text: CMR3U-01 CMR3U-02 CMR3U-04 CMR3U-06 CMR3U-10 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON ULTRA FAST RECOVERY RECTIFIERS 3.0 AMP, 100 THRU 1000 VOLT MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SMC CASE FEATURES: • High reliability
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CMR3U-01
CMR3U-02
CMR3U-04
CMR3U-06
CMR3U-10
CMR3U-01
CMR3U-06,
11-September
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Untitled
Abstract: No abstract text available
Text: CMR3-02 CMR3-04 CMR3-06 CMR3-08 CMR3-10 CMR3-11 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON GENERAL PURPOSE RECTIFIERS 3.0 AMP, 200 THRU 1100 VOLT MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SMC CASE FEATURES: • High reliability
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CMR3-02
CMR3-04
CMR3-06
CMR3-08
CMR3-10
CMR3-11
CMR3-02
11-September
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST - - P LTR A6 B C C1 C2 1 3 DESCRIPTION Tolerance added Change marking Printing Printing Date-Code drawing logo change 4 5 DWN DATE HD HD HD HD PH UKo UKo UKo UKo ZC 09SEP2009 11SEP2009 10MAY2010 20AUG2010
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09SEP2009
11SEP2009
10MAY2010
20AUG2010
16APR2013
COPYRIGHT2006
ECR-13-006763
C23303-A079-A007
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MAV-11SM
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - MAV-11SM Amplifier print this page MAV-11SM Frequency GAIN, dB MHz fL - fU Maximum Power, dBm Output 1 dB Comp. Min. Input (no damage) Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc
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MAV-11SM
MAV-11SM
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diac marking
Abstract: DIAC 220v
Text: DB3MJ Silicon Bidirectional Diac VOLTAGE RANGE: 28-36 V SMAJ 4.3±0.1 2.6±0.15 1.70±0.25 Features The three layer,two termnal,axial lead,hermetically 11 11sealed diacs are designed specifically for triggering 111 1thyristors.They demonstrate low breakover current at
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120Hz
203MAX
11sealed
500KD
100Hz
diac marking
DIAC 220v
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TK16H60C
Abstract: No abstract text available
Text: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)
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TK16H60C
TK16H60C
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Untitled
Abstract: No abstract text available
Text: 11-Serie KL-A_08-Serie KG-A 21/11/12 17:45 Page62 KL series Locking power rocker switches Distinctive features Protection frames Unlocking actuator Unlocking actuator Each KL rocker switch includes an unlocking actuator. This actuator must be pressed to activate the protected function of the rocker.
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11-Serie
08-Serie
Page62
U2260
U2292
14-Symbols-Accessories
Page86
U2271
U2274
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Untitled
Abstract: No abstract text available
Text: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.) z High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)
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TK16H60C
2-16K11
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I DESCRIPTION ICompany name changed IDATE ム ムl corr e ctlon category 1 temper at ur e range Apr， ， 40 'C~+8 5'C→ 40'C~ 十 105'C Additi 0n ;rated v0Ita ge ( O e l a t l n g0 1r a t e dv
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TEB7175H
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Untitled
Abstract: No abstract text available
Text: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.78Ω (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 720V)
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TK13H90A1
2-16K1A
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Untitled
Abstract: No abstract text available
Text: 3SMC5.0CA THRU 3SMC170CA w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 3000 WATT, 5.0 THRU 170 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 3SMC5.0CA series devices are surface mount bi-directional glass
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3SMC170CA
E130224
11-September
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Untitled
Abstract: No abstract text available
Text: CMSH5-20 CMSH5-40 CMSH5-60 CMSH5-100 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 5.0 AMP, 20 THRU 100 VOLT SMC CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH5-20 series 5.0 Amp surface mount silicon Schottky rectifiers are
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CMSH5-20
CMSH5-40
CMSH5-60
CMSH5-100
CMSH5-20
CMSH5-60)
CMSH5-100)
11-September
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Untitled
Abstract: No abstract text available
Text: CMR3S-01 CMR3S-02 CMR3S-04 CMR3S-06 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SUPER FAST RECOVERY RECTIFIERS 3.0 AMP, 100 THRU 600 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CMR3S-01 series 3.0 Amp surface mount silicon Super Fast Recovery
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CMR3S-01
CMR3S-02
CMR3S-04
CMR3S-06
CMR3S-01
11-September
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CMSH3-40
Abstract: CMSH3-100
Text: CMSH3-20 CMSH3-40 CMSH3-60 CMSH3-100 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 20 THRU 100 VOLT SMC CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH3-20 series 3.0 Amp surface mount silicon Schottky rectifiers are
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CMSH3-20
CMSH3-40
CMSH3-60
CMSH3-100
CMSH3-20
CMSH3-60)
CMSH3-100)
11-September
CMSH3-40
CMSH3-100
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marking YD
Abstract: BF999
Text: Silicon N-Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tape BF 999 LB Q 62702-F38 Q62702-F1132 M axim um ratings Symbol
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62702-F38
Q62702-F1132
marking YD
BF999
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pj 989
Abstract: No abstract text available
Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code
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S23SbOS
0Q243GS
Q62702-F874
Q62702-F969
fi23Sb05
BF989
pj 989
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BF963
Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values
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Q62702-F904
fiS35bQ5
20mS30
6235b05
D270k
BB515
270kX
BF963
SIEMENS marking
siemens MOSFET
bf 434
BB515
BF 963
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ERB83-004
Abstract: diode ft 344
Text: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name
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ERB83-004
diode ft 344
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CB903-4
Abstract: ML marking rft t-200
Text: CB903-4 1 OA ¡SbiS ^ I O utline D raw ings K LOW LOSS SUPER HIGH SPEED RECTIFIER -w03.0 ! L nr-MIN. 25 I 5.0 00.8 M 25m,n. • i $ f i : Features • ftV P Low V f ■ S / K ^ Marking S u p e r h ig h speed s w itc h in g . *7 - 3 - K : SH Color code : S ilver
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CB903-4
17-3-K
1504C
ML marking
rft t-200
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T11D
Abstract: PT11S03
Text: Networking Communication Components P T Series IAN Transformer Part number: PT 11S03 Part name : 10/100 Transformer Single Port Feature 0 Compliant and peak reflow temperature rating 245° C . Meets IEEE802.3 specification. Excellent common mode noise suppression.
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11S03
IEEE802
PT11S03
100KHZ,
350uH
100KHZ
PT11S03
T11D
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Untitled
Abstract: No abstract text available
Text: Networking Communication Components PT Series _ IAN Transformer Part number: PT 11S02 Part name :10/100 Transformer Single Port B Feature # Compliant and peak reflow temperature rating 245°C . # Meets IEEE802.3 specification._ 0 Excellent common mode noise suppression.
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11S02
IEEE802
PT11S02
100KHZ,
350uH
100KHZ
PT11S02
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1N 2907A
Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Text: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series
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FMMT2907
FMMT2907A
FMMT2222
OT-23
FMMT2907A
FMMT2369A
1N 2907A
BSS65
A12 marking
marking H6 sot 23
PNP 2907a SOT23
marking FMMT2907A
2907a
BCV72
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L6 SOT-23
Abstract: marking code 20L SOT-23 BSS69R BSS69 BSS70R L6 sot 23 FMMT2369 BSS66 BSS70 BSS67
Text: I FERRANTI BSS69 BSS70 T 11sem iconductors L PNP S ilicon Planar M e d i u m P o w e r S w i t c h i n g Transistors DESCRIPTION These devices are intended for general purpose switching applications. Complementary to the BSS66 and BSS67 Encapsulated in the popular SOT-23 package, these
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BSS69
BSS70
BSS66
BSS67
OT-23
BSS69
BSS70
Collecto00/300
FMMT2222
L6 SOT-23
marking code 20L SOT-23
BSS69R
BSS70R
L6 sot 23
FMMT2369
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