1SS77
Abstract: SEMTECH MARKING
Text: 1SS77WS SILICON EPITAXIAL PLANAR BAND SWITCHING DIODE For band switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PN Top View Marking Code: "PN" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value
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1SS77WS
OD-323
OD-323
1SS77
SEMTECH MARKING
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marking JC diode
Abstract: No abstract text available
Text: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation
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1SV3401
OT-23
marking JC diode
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marking TB
Abstract: 1sv202
Text: 1SV202AWT UHF/VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES Low series resistance and good C-V linearity. PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TB Top View Marking Code: "TB" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25OC
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Original
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1SV202AWT
OD-523
OD-523
marking TB
1sv202
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Untitled
Abstract: No abstract text available
Text: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: MA Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current
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1SS301CCW
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Marking Code "s3" diode
Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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Original
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1SS367
OD-323
OD-323
Marking Code "s3" diode
S3 DIODE schottky
S3 marking DIODE
Marking "s3" Schottky barrier
Diode marking CODE 1M
Marking Code s3 diode
Marking s3 Schottky barrier
1SS367
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1SS314
Abstract: No abstract text available
Text: 1SS314 SILICON EPITAXIAL PLANAR DIODE Applications • VHF Tuner Band Switch PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TY Top View Marking Code: "TY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit
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1SS314
OD-323
OD-323
1SS314
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transistor B3 OF
Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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Original
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KSC2883
KSA1203
OT-89
KSC2883
transistor B3 OF
B3 transistor
KSA1203
B3 marking transistor
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transistor 1203
Abstract: No abstract text available
Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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KSA1203
KSA1203
KSC2883
OT-89
KSA1203OTF
KSA1203YTF
transistor 1203
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS356WS BAND SWITCHING DIODE Features • Small surface mounted type • High reliability PINNING DESCRIPTION PIN Applications • High frequency switching 1 Cathode 2 Anode 2 1 WR Top View Marking Code: "WR" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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Original
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1SS356WS
OD-323
OD-323
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1SV200
Abstract: No abstract text available
Text: 1SV200AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity. DESCRIPTION PIN • High capacitance ratio n = 10 min and suitable for wide band tuner. 1 Cathode 2 Anode 2 1 TJ Top View Marking Code: "TJ"
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Original
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1SV200AWT
OD-523
OD-523
1SV200
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1SV200
Abstract: No abstract text available
Text: 1SV200AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity. DESCRIPTION PIN • High capacitance ratio n = 10 min and suitable for wide band tuner. 1 Cathode 2 Anode 2 1 TJ Top View Marking Code: "TJ"
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Original
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1SV200AWT
OD-523
OD-523
1SV200
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"MARKING CODE TI"
Abstract: marking code TI
Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity DESCRIPTION PIN • High capacitance ratio n = 11 min 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol
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Original
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1SV306AWT
OD-523
OD-523
"MARKING CODE TI"
marking code TI
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marking 25 SOD-323
Abstract: W2 SOD323 diode marking w2 w2 fast recovery diode Fast reverse recovery W2
Text: 1SS511WS SWITCHING DIODE PINNING Features • Ultra high speed switching application • Low forward voltage • Fast reverse recovery time • Small total capacitance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
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Original
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1SS511WS
OD-323
OD-323
marking 25 SOD-323
W2 SOD323
diode marking w2
w2 fast recovery diode
Fast reverse recovery W2
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1SV200
Abstract: marking code 024 sod
Text: 1SV200AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES Low series resistance and good C-V linearity. High capacitance ratio n=10min and suitable for wide band tuner. PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TJ Top View Marking Code: "TJ" Simplified outline SOD-523 and symbol
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Original
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1SV200AWT
10min)
OD-523
OD-523
1SV200
marking code 024 sod
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ksd303
Abstract: SDB310WMU ksd 30 KSD30
Text: SDB310WMU Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WMU Package Code DB3 SOT-323 Outline Dimensions unit : mm 2.1±0.1 1.25±0.05 1.30±0.1
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SDB310WMU
OT-323
KSD-3033-000
ksd303
SDB310WMU
ksd 30
KSD30
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marking db2
Abstract: SDB310WA SDB310WAF ir 2901 ksd2069
Text: SDB310WAF Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WA DB2 Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC
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SDB310WAF
SDB310WA
OT-23F
KSD-2069-000
marking db2
SDB310WA
SDB310WAF
ir 2901
ksd2069
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ksd202
Abstract: SDB310WM ksd2027
Text: SDB310WM Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking Package Code SDB310WM DB3 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ.
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SDB310WM
OT-23
KSD-2027-001
ksd202
SDB310WM
ksd2027
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074004
Abstract: KMS231G b 124004
Text: KMS Series Microminiature Side Actuated Tact Switch for SMT Features/Benefits • Compact size • Excellent tactile feel • ESD protection • Date code marking • Positioning pegs for stability • IP 40 sealing • RoHS compliant and compatible Typical Applications
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KMS221G/GP
KMS223G/GP
074004
KMS231G
b 124004
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SDB310D
Abstract: 02 05 000 2501
Text: SDB310D Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB310D Marking Package Code B1 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1
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SDB310D
OD-323
KSD-C002-000
SDB310D
02 05 000 2501
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SD103AW
Abstract: SD103BW SD103CW continental SOD123 103CW
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS
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SD103AW
SD103CW
OD-123
SD103BW
SD103CW
C-120
continental SOD123
103CW
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PDF
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93 sot223 marking
Abstract: 93 MARKING
Text: SIEMENS PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: PZTA 42, PZTA43 NPN Type Marking Ordering Code (tape and reel) Pin Coni igural ion 2 1 3 4 Package1)
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OCR Scan
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PZTA43
Q62702-Z2037
Q62702-Z2038
OT-223
EHP0073J
EHP007J4
93 sot223 marking
93 MARKING
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SDB310Q
Abstract: package CODE S2 KSD-E002-001
Text: SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310Q S2 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1 0.8±0.1
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SDB310Q
OD-523
KSD-E002-001
SDB310Q
package CODE S2
KSD-E002-001
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PDF
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S3 DIODE schottky
Abstract: S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1
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SDB110Q
OD-523
KSD-E009-001
200pF,
S3 DIODE schottky
S3 marking DIODE
Marking s3 Schottky barrier
SDB110Q
Marking Code s3 diode
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PDF
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2SA1036K
Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Text: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA
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OCR Scan
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2SA1036K
2SA1577
SC-59)
SC-70)
2SA1577;
2SC2411K
2SC4097
2SA1036K
2SA1577
transistor surface mount to
T106
T146
transistor PNP
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