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    MARKING CODE 21E SOT23 Search Results

    MARKING CODE 21E SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING CODE 21E SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING CODE 21E SOT23

    Abstract: No abstract text available
    Text: BF775 NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF775 Marking LOs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter


    Original     		PDF BF775 MARKING CODE 21E SOT23

    MARKING CODE 21E SOT23

    Abstract: No abstract text available
    Text: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF770A Marking LSs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings


    Original     		PDF BF770A MARKING CODE 21E SOT23

    MARKING CODE 21E SOT23

    Abstract: No abstract text available
    Text: BF771 NPN Silicon RF Transistor • For modulators and amplifiers 2 3 in TV and VCR tuners 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF771 Marking RBs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter


    Original     		PDF BF771 MARKING CODE 21E SOT23

    BCW66

    Abstract: BFS17P E6327 marking code MCs
    Text: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage


    Original     		PDF BFS17P VPS05161 BCW66 BFS17P E6327 marking code MCs

    BFR183

    Abstract: BCW66
    Text: BFR183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR183 BFR183 BCW66

    BFT91

    Abstract: BFR92p application note marking GFs BCW66 BFR92P E 94733
    Text: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 2 3 from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BFR92P BFT91 BFT91 BFR92p application note marking GFs BCW66 BFR92P E 94733

    transistor marking R2s

    Abstract: marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66
    Text: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR93A transistor marking R2s marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66

    SOT23 NE

    Abstract: BCW66 BFR181W BFR181W foot print
    Text: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR181W OT323 SOT23 NE BCW66 BFR181W BFR181W foot print

    MARKING CODE 21E SOT23

    Abstract: bcw60 bcx70
    Text: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 2 3 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP Type Marking


    Original     		PDF BCW60, BCX70 BCW61, BCX71 BCW60B BCW60C BCW60D BCW60FF BCX70G BCX70H MARKING CODE 21E SOT23 bcw60 bcx70

    BFR181

    Abstract: 87757 BCW66
    Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR181 BFR181 87757 BCW66

    Untitled

    Abstract: No abstract text available
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR182

    1 R 4254

    Abstract: BFR182 BCW66 infineon marking code L2
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR182 1 R 4254 BFR182 BCW66 infineon marking code L2

    bfr106

    Abstract: BCW66 marking code FA sot23 12652
    Text: BFR106 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers • For linear broadband amplifiers 2 3 • Special application: antenna amplifiers 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR106 bfr106 BCW66 marking code FA sot23 12652

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/

    DEVICE MARKING CODE AAs

    Abstract: MARKING CODE 21E SOT23 marking code AJs
    Text: BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration


    Original     		PDF BCW60, BCX70 BCW61, BCX71 VPS05161 BCW60A BCW60B BCW60C BCW60D BCW60FF DEVICE MARKING CODE AAs MARKING CODE 21E SOT23 marking code AJs

    MARKING CODE 21E SOT23

    Abstract: No abstract text available
    Text: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP 2 1 Type Marking


    Original     		PDF BCW60, BCX70 BCW61, BCX71 VPS05161 BCW60B BCW60C BCW60D BCW60FF BCX70G MARKING CODE 21E SOT23

    BCW60

    Abstract: BCW61 BCW61A BCW61B BCW61C BCW61D BCX70 BCX71 BCX71G BCX71H
    Text: BCW61., BCX71. PNP Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BCW61. BCX71. BCW60, BCX70 BCW61A BCW61B BCW61C BCW61D BCX71G BCX71H BCW60 BCW61 BCW61A BCW61B BCW61C BCW61D BCX70 BCX71 BCX71G BCX71H

    BCW66

    Abstract: BFR35AP MARKING CODE 21E SOT23
    Text: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking GEs Pin Configuration


    Original     		PDF BFR35AP 15may BCW66 BFR35AP MARKING CODE 21E SOT23

    marking ABs

    Abstract: marking AGs sot23 bcw60
    Text: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP • Pb-free (RoHS compliant) package


    Original     		PDF BCW60, BCX70 BCW61, BCX71 BCW60B BCW60C BCW60D BCW60FF BCX70G BCX70H marking ABs marking AGs sot23 bcw60

    BF771 Infineon

    Abstract: BCW66 BF771 RBS INFINEON
    Text: BF771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF771 Marking


    Original     		PDF BF771 BF771 Infineon BCW66 BF771 RBS INFINEON

    BCW66

    Abstract: BF775
    Text: BF775 NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners • Pb-free RoHS compliant package 1) 2 3 • Qualified according AEC Q101 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF775 Marking


    Original     		PDF BF775 BCW66 BF775

    BCW60

    Abstract: BCW 90 BCW60B BCW60C BCW60D BCW60FF BCW61 BCX70 BCX70G BCX70H
    Text: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BCW60, BCX70 BCW61, BCX71 BCW60B BCW60C BCW60D BCW60FF BCX70G BCX70H BCW60 BCW 90 BCW60B BCW60C BCW60D BCW60FF BCW61 BCX70 BCX70G BCX70H

    Untitled

    Abstract: No abstract text available
    Text: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type


    Original     		PDF BF770A

    BCW66

    Abstract: BFR35AP
    Text: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR35AP BCW66 BFR35AP