77V011
Abstract: FWZ9929G IDT77V011
Text: IDT77V011 Device Errata Notes Supplemental Information The revision of the 77V011 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ Data Code dt 77V011 L155DA FWZ9929G The revision is also stored in the Device ID register at address 0x8000.
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IDT77V011
77V011
77V011
L155DA
FWZ9929G
0x8000.
FWZ9929G
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DNA MARKING CODE
Abstract: utopia 2 WF-2
Text: ,'79 'HYLFH UUDWD Notes Sup Supplemental Inf Information The revision of the 77V011 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ Data Code dt 77V011 L155DA FWZ9929G The revision is also stored in the Device ID register at address 0x8000.
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77V011
77V011
L155DA
FWZ9929G
0x8000.
29MHz
40MHz
25Mbps
DNA MARKING CODE
utopia 2
WF-2
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td 2320
Abstract: KQT0402 diode CODE 51n KQT0402TTD16N
Text: INDUCTORS AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 4 5 W 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt P L 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR MARKING Products with Pb-free terminations meet RoHS requirements
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KQT0402
D-25578
td 2320
KQT0402
diode CODE 51n
KQT0402TTD16N
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td 2320
Abstract: Marking Code 34n KQT0402
Text: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt P L 3 Ceramic core Winding wire Electrode Ag/Pd + Ni + Solder Inner coat Flat top film IDENTIFICATION PRODUCT CODE COATING COLOR MARKING KQT0402
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KQT0402
td 2320
Marking Code 34n
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td 2320
Abstract: td36n
Text: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations
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KQT0402
D-25578
td 2320
td36n
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KQT0402
Abstract: td 2320
Text: INDUCTORS AIR CORE 4 5 W WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt P L 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE KQT0402 BODY COLOR MARKING White All these products have Pb-free terminations
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KQT0402
D-25578
KQT0402
td 2320
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PDF
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Untitled
Abstract: No abstract text available
Text: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations
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KQT0402
D-25578
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PDF
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Untitled
Abstract: No abstract text available
Text: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations
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KQT0402
D-25578
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PDF
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NH51
Abstract: No abstract text available
Text: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations
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KQT0402
D-25578
NH51
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IRF Power MOSFET code marking
Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
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6140A
IRFH7932PbF
071mH,
IRF Power MOSFET code marking
24v 12v 20A regulator
IRFH7932pbF
DM marking code
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Untitled
Abstract: No abstract text available
Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
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6140A
IRFH7932PbF
071mH,
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diode 22b3
Abstract: 22B3
Text: PD - 96140 IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
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IRFH7932PbF
078mH,
diode 22b3
22B3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS
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IRFH7932PbF
IRFH7932TRPbF
IRFH7932TR2PbF
078mH,
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Untitled
Abstract: No abstract text available
Text: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS
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IRFH7932PbF
IRFH7932TRPbF
IRFH7932TR2PbF
IRFH7934PbF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21099 11/05 60EPU06PbF 60APU06PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free "PbF" suffix trr = 34ns (typ) IF(AV) = 60Amp VR = 600V Benefits • Reduced RFI and EMI • Higher Frequency Operation
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PD-21099
60EPU06PbF
60APU06PbF
60Amp
08-Mar-07
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60APU06PBF
Abstract: IRFP250 WELDING APPLICATION NOTE irfp250 applications vr1 500 P335H 60EPU06PBF 60APU06 60EPU06 IRFP250
Text: Bulletin PD-21099 11/05 60EPU06PbF 60APU06PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free "PbF" suffix trr = 34ns (typ) IF(AV) = 60Amp VR = 600V Benefits • Reduced RFI and EMI • Higher Frequency Operation
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PD-21099
60EPU06PbF
60APU06PbF
60Amp
12-Mar-07
60APU06PBF
IRFP250 WELDING APPLICATION NOTE
irfp250 applications
vr1 500
P335H
60EPU06PBF
60APU06
60EPU06
IRFP250
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100V N-Channel Power MOSFET 500A
Abstract: MOSFET TO-252 TSM35N10
Text: TSM35N10 100V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 37 @ VGS =10V 32 Block Diagram Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)
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TSM35N10
O-252
TSM35N10CP
100V N-Channel Power MOSFET 500A
MOSFET TO-252
TSM35N10
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N-Channel
Abstract: MOSFET TO-252
Text: TSM35N10 100V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 37 @ VGS =10V 32 Block Diagram Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)
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TSM35N10
O-252
TSM35N10CP
N-Channel
MOSFET TO-252
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Untitled
Abstract: No abstract text available
Text: MDD175-34N1 High Voltage Standard Rectifier Module VRRM = 2x 3400 V I FAV = 240 A VF = 1.01 V Phase leg Part number MDD175-34N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current
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MDD175-34N1
60747and
20130813g
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Untitled
Abstract: No abstract text available
Text: SCS110KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS110KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS110KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS110KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS220KE2 SiC Schottky Barrier Diode Datasheet Outline VR 1200V IF 10A/20A* QC 34nC Per leg TO-247 *(Per leg / Both legs) (1) (2) (3) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode
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SCS220KE2
0A/20A*
O-247
R1102B
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SCS110KG
Abstract: No abstract text available
Text: SCS110KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS110KG
O-220AC
R1102B
SCS110KG
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PDF
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Untitled
Abstract: No abstract text available
Text: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS210KG
O-220AC
R1102B
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