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    MARKING CODE 38 SMD TRANSISTOR Search Results

    MARKING CODE 38 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE 38 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    3225 K30

    Abstract: K30 varistor VARISTOr MZ smd code 601 ZV30K0603 keko st smd IC marking code
    Text: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered


    Original     		PDF

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		PDF IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV28UN O-236AB)

    3N0625

    Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
    Text: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9


    Original     		PDF IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 IPP25N06S3-25 3N0625 BIPP25N06S3-25, 3N0625 INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon

    K802

    Abstract: varistor ST
    Text: Multilayer Technology Varistor Plus ZV Series Low Voltage Leaded Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV33UPE O-236AB)

    05N03LA

    Abstract: 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av
    Text: OptiMOS 2 Power-Transistor IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av

    marking code br 39 SMD

    Abstract: smd marking code 321 05n03la
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA marking code br 39 SMD smd marking code 321 05n03la

    05N03LA

    Abstract: IPU05N03LA p 181 V
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA 05N03LA p 181 V

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06

    Q67065-A7014

    Abstract: IPI80N06S3L06
    Text: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S3L-06 IPI80N06S3L-06 PG-TO263-3-2 Q67065-A7014 IPI80N06S3L06

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2

    09n03lb

    Abstract: PG-TO252-3-23
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB 09n03lb PG-TO252-3-23

    2n04h4

    Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
    Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18165 2N04H4 2n04h4 SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf

    12n03lb

    Abstract: 12n03l d2422 12n03
    Text: OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level


    Original     		PDF IPD12N03LB IPU12N03LB IPS12N03LB IPF12N03LB PG-TO252-3-11 12n03lb 12n03l d2422 12n03

    06N03LB

    Abstract: PG-TO252-3-11 IPD06N03LB Q67042-S4263
    Text: OptiMOS 2 Power-Transistor IPD06N03LB G IPS06N03LB G IPU06N03LB G IPF06N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD06N03LB IPU06N03LB IPS06N03LB IPF06N03LB PG-TO252-3-11 06N03LB Q67042-S4263

    2n0612

    Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
    Text: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 PG-TO220-3-1 SP0002-18173 2N0612 2n0612 smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172

    Untitled

    Abstract: No abstract text available
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11

    05N03LA

    Abstract: IPF05N03LA 05n03l IPD05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l P-TO252-3-11

    05N03LA

    Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03 fet to251 marking CODE R SMD DIODE P-TO252-3-11 05N03L

    ZTA 4.0 MG

    Abstract: No abstract text available
    Text: TOKEN CERAMIC RESONATORS MHz/KHz Type Ceramic Resonators Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PDF PC1401C LA7620 TA7777P LDA3586N LA7650 TA8654AN AN5302 ZTB912F ZTB912F101 ZTB912F104 ZTA 4.0 MG