F5 marking code
Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month
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OD-323
LLP75-3A,
LLP75-3B
OD-523
DO-219AB)
OT-23
OD-123
06-May-04
F5 marking code
MARKING CODE f5
marking code vishay label
SMF DO-219AB
Vishay diodes code marking
Vishay DaTE CODE
DO-219AB
marking L4 SOD123
SOD-523 DO-219AB
SOD-80 sod123
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sot-23 Marking 3D
Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L
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BC856/857/858
100mA)
OT-23
BC856A/B
BC857A/B/C
BC858A/B/C
BC856
sot-23 Marking 3D
BC856
sot-23 MARKING CODE 3d
3D marking sot23
3H SOT23
BC856B SOT23
BC856A
BC856B
BC857
BC858
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Untitled
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2305 Pin Description -20V/-3.5A , RDS ON =60mΩ(typ.) @ VGS =-4.5V RDS(ON) =70mΩ(typ.) @ VGS =-2.5V R =83mΩ(typ.) @ V DS(ON) z GS =-1.8V Super High Dense Cell Design Top View of SOT23-3L z Reliable and Rugged
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TDM2305
-20V/-3
OT23-3L
TDM2305â
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Untitled
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L
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TDM2301
-20V/-3A
OT23-3L
TDM2301â
TDM2301
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MARKING TR SOT23-3 P MOSFET
Abstract: APM2301CA STD-020C marking tp sot23-3
Text: APM2301CA P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A RDS ON = 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 135mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design SOT23-3 Reliable and Rugged
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APM2301CA
-20V/-3A
OT23-3
APM2301C
APM2301C
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MARKING TR SOT23-3 P MOSFET
APM2301CA
STD-020C
marking tp sot23-3
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Untitled
Abstract: No abstract text available
Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302S Pin Description 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
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TDM2302S
OT23-3L
TDM2302Sâ
TDM2302S
23-3L
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Untitled
Abstract: No abstract text available
Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
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TDM2302
OT23-3L
TDM2302â
TDM2302
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marking 624
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT624 125V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 125V IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current RCE sat = 160mΩ for a low equivalent On-Resistance
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FMMT624
625mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS33110
marking 624
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ic 7495
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.
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ZXTP25060BFH
-85mV
ZXTN25060BFH
AEC-Q101
DS33374
ic 7495
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BC817
Abstract: No abstract text available
Text: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound
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BC817-16W/-25W/-40W
BC807-xxW
OT323
AEC-Q101
J-STD-020
MIL-STD-202,
DS30575
BC817
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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BC848A
Abstract: No abstract text available
Text: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion Complementary PNP Types: BC856 – BC858 For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound
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BC846A-BC848C
BC856
BC858
AEC-Q101
J-STD-020
MIL-STD-202,
BC846A
BC848C
DS11108
BC848A
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Untitled
Abstract: No abstract text available
Text: DSS4320T LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching
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DSS4320T
DSS5320T)
OT-23
J-STD-020D
MIL-STD-202,
DS31621
621-DSS4320T-7
DSS4320T-7
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Code A08 RF Semiconductor
Abstract: NPN planar RF transistor marking code B2 RF POWER TRANSISTOR NPN A08 marking A08 SOT23 a08 transistor
Text: TSC5904 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 80V BVCEO 60V IC 3A VCE SAT Features ● ● Ordering Information High Collector-Emitter BVCEO=60V High Collector Current IC =3A Part No. TSC5904CX RF
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TSC5904
OT-23
TSC5904CX
300mA
Code A08 RF Semiconductor
NPN planar RF transistor
marking code B2
RF POWER TRANSISTOR NPN
A08 marking
A08 SOT23
a08 transistor
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Untitled
Abstract: No abstract text available
Text: MA2409K10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2409K10000000
MA2409K
D032610
OT-23
3000pcs
15000pcs
OT-23/25
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Untitled
Abstract: No abstract text available
Text: MA2411K10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2411K is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2411K10000000
MA2411K
OT-23
3000pcs
15000pcs
9000pcs
OT-23/25
D022410
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Untitled
Abstract: No abstract text available
Text: MA3404K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3404K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA3404K10000000
MA3404K
D032610
OT-23
3000pcs
15000pcs
OT-23/25
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Untitled
Abstract: No abstract text available
Text: MA3001K10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3001K is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA3001K10000000
MA3001K
D032610
OT-23
3000pcs
15000pcs
OT-23/25
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marking code r2
Abstract: BC856 BC857 BC858 transistor NF marking code BC856B BC856A BC857A BC857B BC857C
Text: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy
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BC856
BC857
BC858
BC856,
BC857
OT-23
IEB125
BC856B
BC857B
marking code r2
transistor NF marking code
BC856B
BC856A
BC857A
BC857B
BC857C
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Untitled
Abstract: No abstract text available
Text: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy
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BC856
BC857
BC858
BC856,
BC857
OT-23
BC856B
BC857B
BC858B
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Untitled
Abstract: No abstract text available
Text: MA3007K10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3007K is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA3007K10000000
MA3007K
OT-23
3000pcs
15000pcs
9000pcs
OT-23/25
D012510
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apm2308
Abstract: APM2308A A102 STD-020C max6280
Text: APM2308A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3A , RDS ON = 60mΩ(typ.) @ VGS= 10V RDS(ON)= 90mΩ(typ.) @ VGS= 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-3 Lead Free Available (RoHS Compliant)
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APM2308A
OT-23-3
APM2308
APM2308
APM2308A
A102
STD-020C
max6280
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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