CJ 4148
Abstract: No abstract text available
Text: 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Product Features SOD-123F ◇ Fast switching device Trr<4.0nS ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
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1N4148W/1N4448W/1N914BW
400mW
OD-123F
OD-123F
MIL-STD-202,
C/10s
1N4148W
1N4448W
1N914BW
CJ 4148
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1AM c
Abstract: 1AM marking transistor
Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT3904
300mW,
OT-23
MIL-STD-202,
1AM c
1AM marking transistor
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w1p npn
Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor mance and selection in the wideband arena. The devices are
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OT-223
priFS17
BFS17A
BFT25
BFT92
BFT93
OT-23
OT-89
OT-143
OT-223
w1p npn
SOT23 W1P
SOT-23 marking r1p
SMD MARKING CODE v3p
SMD sot23 marking E6
w1p 60
"W1P"
w1p 73
MARKING W1P
SMD W1P
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ZENER 18- 2 5t
Abstract: marking code zener diode 5D Zener Diode marking 5T ZENER DIODE 5K
Text: BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.4V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V4K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
ZENER 18- 2 5t
marking code zener diode 5D
Zener Diode marking 5T
ZENER DIODE 5K
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Untitled
Abstract: No abstract text available
Text: SS13M - SS16M CREAT BY ART 1.0AMPS. Surface Mount Schottky Barrier Micro SMA Features Very low profile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency Meet MSL level 1, per J-STD-020D,
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SS13M
SS16M
J-STD-020D,
22-A111
2002/95/EC
2002/96/EC
J-STD-002B,
JESD22-B102D
RS-481
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Untitled
Abstract: No abstract text available
Text: TESDC5V0LC Bi-directional ESD Protection Diode Small Signal Product Features SOD-323 ◇ Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ◇ Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) ◇ Protects one Bi-directional I/O line ◇ Working Voltage : 5V
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OD-323
IEC61000-4-2
IEC61000-4-4
OD-323
MIL-STD-202,
260oC/10s
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sot 23 tr2
Abstract: 2RX MARKING HSMS8202 sot23 marking tr1 HSMS-8207 HSMS-8209 HSMS-280X HSMS-8101 HSMS-8202 MARKING SOT23 tr2
Text: Surface Mount Microwave Schottky Mixer Diodes Technical Data Features HSMS-8101 Single HSMS-8202 Series Pair HSMS-8207 Ring Quad HSMS-8209 Crossover Quad Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance Package Lead Code Identification
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HSMS-8101
HSMS-8202
HSMS-8207
HSMS-8209
OT-23
OT-143
HSMS-280X
-281X
sot 23 tr2
2RX MARKING
HSMS8202
sot23 marking tr1
MARKING SOT23 tr2
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Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
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1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
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RH6160
Abstract: RH6150 fru250f FRU900F FRU300F frv03 RX110f RU110F FRG1200F FRG1100F
Text: Contents 1 2、 3、 OVERVIEW COMPANY PROFILE P.1 FUZETEC PRODUCT FAMILY P.1 SAFETY, QUALITY AND CUSTOMER SATISFACTORY P.1 TECHNOLOGY NICHE P.1 FUNDAMENTAL HOW DOES THE RESETTABLE FUSE WORK P.2 TRIP CURRENT, HOLD CURRENT AND THERMAL DERATING P.2 PRODUCTS
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FRX90V
P9-P11
P12-P14
P15-P17
P21-P23
P24-P26
P27-P29
P33-P35
P36-P38
P39-P41
RH6160
RH6150
fru250f
FRU900F
FRU300F
frv03
RX110f
RU110F
FRG1200F
FRG1100F
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tct 6801
Abstract: marking a007 Marking code A006 M8340103 marking a004 M8340103M6801GB MIL-R-83401
Text: MODEL DFM14 Thick Film Resistor Networks Military, MIL-R-83401 Qualified, Type RZ 11,12,15 Schematics FEATURES • Hot solder clipped leads • MIL-R-83401 qualified • Highly stable thick film • T.C.T. available in 'K' ±100ppm/°C or 'M‘ (±300ppm/°C) characteristic.
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DFM14
MIL-R-83401
100ppm/
300ppm/
MIL-R-83401
MIL-STD-202
DFM1411
M83401
DFM14-11
tct 6801
marking a007
Marking code A006
M8340103
marking a004
M8340103M6801GB
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SFH4249
Abstract: SFH4248 Q65110A7518 Q65110A7519 ns 4248 4248
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • • • • • •
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
SFH4249
SFH4248
Q65110A7518
Q65110A7519
ns 4248
4248
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OHF04132
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4258 SFH 4259 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • • • • Infrarot LED mit hoher Ausgangsleistung
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
60825-1u
OHF04132
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Untitled
Abstract: No abstract text available
Text: TOPLED long life Enhanced Optical Power LED ATON® Lead (Pb) Free Product - RoHS Compliant LW T6SC Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-2 Gehäuse, eingefärbter diffuser Silikon - Verguss • Besonderheit des Bauteils: erhöhte Lebensdauer durch verbesserten Verguss
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amplifier SMD MARKING CODE 211
Abstract: No abstract text available
Text: LMV1012 Series Analog Pre-Amplified IC’s for High Gain Microphones General Description Features The LMV1012 is an audio amplifier series for small form factor electret microphones. It is designed to replace the JFET amplifier currently being used. The LMV1012 series is
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LMV1012
LMV1012
amplifier SMD MARKING CODE 211
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4258S SFH 4259S Wesentliche Merkmale Features • • • • Infrarot LED mit hoher Ausgangsleistung Halbwinkel SFH 4258S: ± 15°
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4258S
4259S
4258S:
4259S:
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Q65110A1647
Abstract: No abstract text available
Text: SmartLED 0603 White Hyper-Bright LED Lead Pb Free Product - RoHS Compliant LW L283 Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse 0603, farbiger diffuser Verguss • Besonderheit des Bauteils: kleinste Bauform 1,7 x 0,8 x 0,65 mm (LxBxH) mit
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GPLY6880
Abstract: sideled OHF04132
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
GPLY6880
sideled
OHF04132
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free
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2SC2411K
225mW
500mA
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2013-REV
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SST4443
Abstract: MosFET 23OCT2013
Text: SST4443 -2.3A , -30V , RDS ON 120 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SST4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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SST4443
SST4443
OT-26
23-Oct-2013
MosFET
23OCT2013
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sr004
Abstract: No abstract text available
Text: SR002 - SR010 creat by art 0.5AMP. Schottky Barrier Rectifiers DO-41 Features Low power loss, High efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency
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DO-41
SR002
SR010
MIL-STD-202,
DO-41
sr004
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Untitled
Abstract: No abstract text available
Text: SR002 - SR010 creat by art 0.5AMP. Schottky Barrier Rectifiers DO-41 Features Low power loss, High efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency
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DO-41
SR002
SR010
MIL-STD-202,
DO-41
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Untitled
Abstract: No abstract text available
Text: STT2629S -1.5A , -100V , RDS ON 550 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 STT2629S utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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STT2629S
-100V
STT2629S
2629S
11-Jul-2013
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473 kck
Abstract: kck 100v 223 k5r 103k ceramic capacitor 103 kck npo 121 j kck k5u 105 capacitor kemet 471 k1k military capacitor m390 471 kck kck capacitor
Text: INDEX Multilayer Ceramic Capacitors/Axial & Radial Page General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Conformally Coated/Axial & Radial
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6332 smd flat resistor
Abstract: EN-140401-801 marking code R52 SMD Transistor MARKING SMD transistor R52 SMD resistors 2012 smd transistor marking code EY TNPW0402 TNPW0603 31006 TNPW1206
Text: TNPW Vishay Dale Thin Film, Rectangular, Resistor Chips FEATURES • • • • • Metal film layer on high quality ceramic Protective top coat Available with tin lead or lead Pb -free solder contacts Excellent stability at different environmental conditions
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08-Apr-05
6332 smd flat resistor
EN-140401-801
marking code R52 SMD Transistor
MARKING SMD transistor R52
SMD resistors 2012
smd transistor marking code EY
TNPW0402
TNPW0603
31006
TNPW1206
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