AFL Marking
Abstract: MARKING CODE AFL MSOP8 Part marking SUFFIX AFL200-00E AFL002-10E
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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AFL000-00E
AFL000-10E
AFL001-10E
AFL002-10E
AFL005-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
AFL Marking
MARKING CODE AFL
MSOP8 Part marking
SUFFIX
AFL200-00E
AFL002-10E
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MARKING CODE AFL
Abstract: MSOP8 Part marking TDFN-6
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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su9189
MARKING CODE AFL
MSOP8 Part marking
TDFN-6
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Untitled
Abstract: No abstract text available
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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AFL000-00E
AFL000-10E
AFL001-10E
AFL002-10E
AFL005-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
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Untitled
Abstract: No abstract text available
Text: AFL Series 11409 Valley View Road Eden Prairie, MN 55344 Phone: 952 829-9217 Fax: (952) 996-1600 Data Sheet NVE AFLxxx-xx Low Power Low Voltage Digital Switch • • • • • ● • Low Voltage Operation Down to 0.9V Low Current Consumption Digital Switch Output
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AFL000-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
AFL300-00E
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MARKING CODE AFL
Abstract: MSOP8 Part marking
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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Untitled
Abstract: No abstract text available
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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OR1 marking
Abstract: 3x62 NICHICON lot month
Text: ALUMINUM v7rv / ELECTROLYTIC nichicon CAPACITORS 5.5mmL Chip Type \ series m Chip type with 5.5mm height. m Designed for surface mounting on high density PC board. m Applicable to automatic mounting machine using carrier tape. m Load life of 2000 hours at 85°C.
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33OuF
120Hz
10x10
10x10
OR1 marking
3x62
NICHICON lot month
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PDF
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Ceramic Capacitors 104
Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-27
Ceramic Capacitors 104
mev-50a
DXW21BN7511S
SAYFP1G95AA0B00
ck 66 ul94v-0 lcd
SAYFP897MCA0B00
SAFEB1G57KE0F00
SAWEN1G84
murata enc-03r
MA300D1-1
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MM5829-2700
Abstract: MM8030-2600 ANCL11G57SAA165 ANCL11G57 CSR BC5MM MICROCHIP 2012 SMD MARKING AS-M15SA-R CA0TB MEDIATEK z5v cap
Text: MURATA PRODUCTS 2010-2011 2010-2011 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-28
MM5829-2700
MM8030-2600
ANCL11G57SAA165
ANCL11G57
CSR BC5MM
MICROCHIP 2012 SMD MARKING
AS-M15SA-R
CA0TB
MEDIATEK
z5v cap
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PDF
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panasonic transistor marking pr
Abstract: D 2058 AN26214A AN262 marking nb 4-Layer PE-film panasonic packing label
Text: Regulations No : SC3S1305 Total pages Page 5 1 PACKAGE STANDARDS Package code XLGA011-W-1612-AN26214A Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established: 2006-03-15 Revised : - Established by Applied by Checked by Prepared by S. Okada
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SC3S1305
XLGA011-W-1612-AN26214A
XLGA011-W-1612
panasonic transistor marking pr
D 2058
AN26214A
AN262
marking nb
4-Layer
PE-film
panasonic packing label
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C
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Q62702-C2354
OT-23
E3SL05
6235b05
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A129 marking code
Abstract: 5F marking
Text: ERB38 o .8A : Outline Drawings r4 * - Y FAST RECOVERY DIODE • t t f t : F e a tu re s :5F : Marking Su p e r high speed sw itching • 9 - > * y W E fie1 il' Ì 7- 3-K : à Color code : White Low V F in turn on • AfltM tt H igh reliability Abridged type name
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ERB38
A129 marking code
5F marking
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PDF
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IMBT4403
Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C
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G0D40fl3
OT-23
IMBT3903
IMBT3904
IMBT4400
10Ol3Â
IMBT4401
10CX3>
IMBT2222
BC807-16
IMBT4403
5n80
BC817-16
BC817-25
BC817-40
BC846A
IMBT2222A
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PDF
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RTC1005
Abstract: No abstract text available
Text: N AflER PH IL IP S/ D IS C R ET E DbE D • MAINTENANCE TYPE for new design use PTB23003X _ GGS3G31 QGISDflS T ■ A PKB12005lT 3 1 ^ 7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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PTB23003X)
GGS3G31
PKB12005lT
RTC1005
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PDF
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Untitled
Abstract: No abstract text available
Text: • bbSB^Bl Q025flfl4 b33 H A P X N AflER PHILIPS/D ISCR ETE PM BT6428 PM BT6429 b7E D _ _ SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD) plastic envelope intended for application in thick and
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OCR Scan
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Q025flfl4
BT6428
BT6429
PMBT6428
PMBT6429
DPMBT6428
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PDF
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Untitled
Abstract: No abstract text available
Text: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications
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BCX19
BCX20
OT-23
BCX17and
BCX18
0D54b04
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PDF
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BAL99
Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
Text: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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bbS3T31
BAL99
S3131
00242Sfl
BAW62
BAL99
Philips MBB
BAW62 sot23
BAW62 PH
philips diode PH 15
ir 222
BAW62
D0242
LF MARKING CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: r r i m LTC1426 m TECHNOLOGY Micropower Dual 6-Bit PWM DAC F€OTUR€S D€SCRIPTIOn • Wide Supply Range: 2.7V < V^c ^ 5.5V ■ Wide Reference Voltage Range: OV to 5.5V The LTC 1426 is a dual micropower 6-bit PWM DAC featuring versatile PWM outputs and aflexible pushbutton
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LTC1426
LTC1426
1329/LTC1329-10/LTC1329-50
LTC1446/LTC1446L
LTC1451/LTC1452/LTC1453
LTC1590
LTC8043
16-pin
12-Bit
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PDF
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ALG TRANSISTOR
Abstract: No abstract text available
Text: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.
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OCR Scan
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Q024547
BCV62;
BCV62B;
OT-143
rBCV62A
ALG TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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OCR Scan
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bbS3T31
QQ23b34
BF998
OT143
LtiS3T31
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PDF
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m38510/10404
Abstract: 55115 marking code YS SMD E1713 5962-E1713-2
Text: REVISIONS LTR DESCRIPTION DATE yr -m o -oa APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM 1C N/A STANDARDIZED MILITARY DRAWING PREPARED BY J AflpA*,(k . SCKED B Y A _ DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 rj MICROCIRCUIT, LINEAR, DUAL, DIFFERENTIAL LINE
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5962-E1713-2
MIL-BUL-103.
MIL-BUL-103
9S0-S47
m38510/10404
55115
marking code YS SMD
E1713
5962-E1713-2
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PDF
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Untitled
Abstract: No abstract text available
Text: PDR5G 5A GLASS PASSIVATED RECTIFIER PowerDI 0/o5 Features X Glass Passivated Die Construction X Low Leakage Current X Lead Free Finish, RoHS i— D — i Ub2> T T i 1 Com pliant Note 1) X "Green" Molding Compound (No Br, Sb) X Qualified to AE C -Q 101 Standards for High
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.
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OCR Scan
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LBE/LCE1004R
LBE/LCE1010R
E2003S
LBE/LCE2009S)
E1004R
E1010R
1004R
1010R
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PDF
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Untitled
Abstract: No abstract text available
Text: PDU420 4A ULTRA-FAST RECOVERY RECTIFIER PowerDI 0/o5 Features Mechanical Data I Glass Passivated Die Construction I Case: PowerDI 5 1 Ultra-Fast Recovery Time for High Efficiency 1 High M aximum Junction Tem perature I I I I I I Case M aterial: M olded Plastic, GreenîM olding
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OCR Scan
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PDU420
J-STD-020C
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PDF
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