Kelly
Abstract: marking code of 0 to Z marking 51 MF-NSMF020 MF-NSMF035 MF-NSMF050 MF-NSMF075 MF-NSMF110 MF-NSMF150 MF-NSMF200
Text: June 2005 Circuit Protection Division Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team ION IT TECT U C CIR PRO Bourns Multifuse® Product Marking Modification The products in the MF-NSMF product family will now be marked with a simple product code
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MCF528X
Abstract: MCF5282 MCF5281 MCF5282DE L95M
Text: MCF5282 Chip Errata Silicon Revision: All Supports: MCF5281, MCF5282 Summary of MCF528x Errata All current MCF5281/82 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is
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MCF5282
MCF5281,
MCF5282
MCF528x
MCF5281/82
XXX0324
XXX0326
MCF5281
MCF5282DE
L95M
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WE 251
Abstract: HOT 51011 W6 13A Diode 2306U
Text: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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251M1002
Abstract: ic 6301 22 J.63 capacitor
Text: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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Untitled
Abstract: No abstract text available
Text: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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Untitled
Abstract: No abstract text available
Text: P- 251 - E013 TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies.
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10B35
Abstract: 22 J.63 capacitor
Text: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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Untitled
Abstract: No abstract text available
Text: P- 251 - E014 TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies.
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3528
Abstract: T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS
Text: Go ahead, it’s your move . . . . Design a KEMET Tantalum Chip into your future KEMET is offering five Tantalum Chip Engineering Kits to meet your diverse design needs for the future. KEMET’s line of Engineering Kits for Tantalum Chips will include a T495 Low ESR Kit, an Extended Range T491 Kit, a Standard T491
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T520V157M006AS
T520D337M006AS
T520X477M006AS
T520D107M010AS
T520D157M010AS
T520X337M010AS
F3217D
3528
T495X476K020AS
Tantalum Capacitor kemet 10 uF
T495X475K050AS
T495X337K006AS
kemet Tantalum
T491A475K006AS
T495X107K016AS
T491D107K006AS
T491B106K020AS
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Untitled
Abstract: No abstract text available
Text: SN54F283, SN74F283 4ĆBIT BINARY FULL ADDERS WITH FAST CARRY SDFS069A − D2932, MARCH 1987 − REVISED OCTOBER 1993 • • • SN54F283 . . . J PACKAGE SN74F283 . . . D OR N PACKAGE TOP VIEW Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead
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SN54F283,
SN74F283
SDFS069A
D2932,
SN54F283
300-mil
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Untitled
Abstract: No abstract text available
Text: SN54F283, SN74F283 4ĆBIT BINARY FULL ADDERS WITH FAST CARRY SDFS069A − D2932, MARCH 1987 − REVISED OCTOBER 1993 • • • SN54F283 . . . J PACKAGE SN74F283 . . . D OR N PACKAGE TOP VIEW Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead
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SDFS069A
D2932,
SN54F283,
SN74F283
300-mil
SN54F283
SN74F283
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Untitled
Abstract: No abstract text available
Text: SN54F283, SN74F283 4ĆBIT BINARY FULL ADDERS WITH FAST CARRY SDFS069A − D2932, MARCH 1987 − REVISED OCTOBER 1993 • • • SN54F283 . . . J PACKAGE SN74F283 . . . D OR N PACKAGE TOP VIEW Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead
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SN54F283,
SN74F283
SDFS069A
D2932,
SN54F283
300-mil
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Untitled
Abstract: No abstract text available
Text: SN74F169 SYNCHRONOUS 4ĆBIT UP/DOWN BINARY COUNTER ą SDFS089 − MARCH 1987 − REVISED OCTOBER 1993 • • • • • D OR N PACKAGE TOP VIEW Fully Synchronous Operation for Counting and Programming Internal Look-Ahead Circuitry for Fast Counting Carry Output for N-Bit Cascading
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SN74F169
SDFS089
300-mil
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Untitled
Abstract: No abstract text available
Text: • bbSB^Bl 0025AQ1 bbl ■ APX N AHER PHILIPS/DISCRETE PMBD 6050 b?E D J V. SILICON PLANAR EPITAXIAL HIGH SPEED DIODES Silicon epitaxial high speed diodes in a microminiature plastic envelope. It is intended for high-speed switching in thick and thin-film circuits.
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0025AQ1
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Untitled
Abstract: No abstract text available
Text: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage
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BAS70-07
BAS70-70
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Untitled
Abstract: No abstract text available
Text: bb53T31 0PS4SST 64fl « A P X N AHER PHILIPS/DISCRETE b?E BCV71 BCV72 J> J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.
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bb53T31
BCV71
BCV72
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Untitled
Abstract: No abstract text available
Text: • bb53T31 00243b3 407 N AHER PHILIPS/DISCRETE APX BAV74 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the device is intended for high-speed switching in thick and thin-film circuits.
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bb53T31
00243b3
BAV74
DD243tiLi
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1D2 SOT-23
Abstract: BCX18 BCX19 BCX20
Text: • bbS3131 OOEMbQl TD2 H A P X N AHER PHILIPS/DISCRETE BCX19 BCX20 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications
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BCX19
BCX20
OT-23
BCX17and
BCX18
BCX19
35MHz
1D2 SOT-23
BCX20
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Untitled
Abstract: No abstract text available
Text: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323
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DQ25T47
PMST4403
OT323
MAM096
bbS3T31
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Untitled
Abstract: No abstract text available
Text: • bbSBTBl QOSMSfl? 70S H A P X N AHER PHILIPS/DISCRETE BCW71 BCW72 b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.
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BCW71
BCW72
bbS3T31
D054ST1
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 0025561 Ifll H A P X N AHER PHILIPS/DISCRETE BSR18A b7E D SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope, intended fo r switching and linear applica tions in thick and thin-film circuits.
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bbS3T31
BSR18A
1N916.
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transistor d 1933
Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Text: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial
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0025T47
PMST4403
OT323
PMST4403
MAM096
transistor d 1933
transistor marking code p2T
VC80
marking code P2T
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TRANSISTOR SMD CODE B7
Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.
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PMBT3906
PMBT3906
TRANSISTOR SMD CODE B7
TRANSISTOR SMD MARKING CODE B7
transistor smd marking JT
smd transistor kn
transistor p2a
smd TRANSISTOR code b7
MARKING CODE SMD IC
smd transistor marking PA
K TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE
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p2x transistor
Abstract: transistor marking code p2x PMST4401 bbS3T31
Text: 0. . e . „ . Philips Semiconductors • bbSB^l 0025^42 DbS M A P X " n AHER P H I L I P S / D I S C R E T E _ . ._ t. Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION
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PMST4401
OT323
PMST4401
bbS3cl31
p2x transistor
transistor marking code p2x
bbS3T31
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