Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V BVCES > 700V BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
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APT17
MIL-STD-202,
200mg
DS36298
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PDF
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ST 9340
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23
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M3D088
PSSI3120CA
PSSI3120CA
MGC421
di20CA
13-Feb-03)
ST 9340
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PDF
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Untitled
Abstract: No abstract text available
Text: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .
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Original
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DTA114EM/EE/EUA/ECA/ESA
OT523
/SOT323/SOT23
OT-723
OT-523
S1402004
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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PDF
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5630 SOT23
Abstract: FDN5630
Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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Original
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FDN5630
5630 SOT23
FDN5630
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PDF
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transistor c143
Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
Text: DTC143 ZM/ZE/ZUA/ZCA/ZSA Taiwan Semiconductor Small Signal Product PNP Small Signal Transistor FEATURES - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor SOT523/SOT323/SOT23 see equivalent circuit
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Original
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DTC143
OT523/SOT323/SOT23
OT-723
S1404021
transistor c143
C143 Transistor
ze 003 ic
ZUA SOT23
ze 003
zua SOT-23
ZE SOT-23
marking CODE ZUA SOT23
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PDF
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5630 PKG
Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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Original
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FDN5630
5630 PKG
5630 SOT23
marking code 10 sot23
FDN5630
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PDF
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5630 PKG
Abstract: FDN5630 sot23 footprint
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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Original
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FDN5630
5630 PKG
FDN5630
sot23 footprint
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PDF
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BAS16WS-V
Abstract: BAS16WS-V-GS08 BAS16
Text: BAS16WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode e3 • Also available in case SOT23 with designation BAS16 • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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BAS16WS-V
BAS16
2002/95/EC
2002/96/EC
OD323
GS18/10
GS08/3
BAS16WS-V-GS18
BAS16WS-V-GS08
BAS16WS-V
BAS16WS-V-GS08
BAS16
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PDF
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1N4148WS-V
Abstract: 1N4148WS-V-GS08 1N4148WS-V-GS18 1n4148ws SOT23 DIODE marking CODE AV 1N4148 DO35 IMBD4148-V LL4148 1n4148ws a2
Text: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case e3 with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT23 case with the
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Original
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1N4148WS-V
1N4148,
LL4148,
IMBD4148-V
2002/95/EC
2002/96/EC
OD323
GS18/10
GS08/3
1N4148WS-V
1N4148WS-V-GS08
1N4148WS-V-GS18
1n4148ws
SOT23 DIODE marking CODE AV
1N4148
DO35
IMBD4148-V
LL4148
1n4148ws a2
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PDF
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1N4148W-V
Abstract: 1N4148W-V-GS18 1N4148W-V-GS08 1N4148 MARKING A2 CASE-SOD-123 1N4148 DO35 IMBD4148-V LL4148 1N4148 sod123
Text: 1N4148W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case with the type designation 1N4148, the e3 MiniMELF case with the type designation LL4148, and the SOT23 case with the
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Original
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1N4148W-V
1N4148,
LL4148,
IMBD4148-V.
2002/95/EC
2002/96/EC
OD123
GS18/10
GS08/3
1N4148W-V-GS18
1N4148W-V
1N4148W-V-GS08
1N4148 MARKING A2
CASE-SOD-123
1N4148
DO35
IMBD4148-V
LL4148
1N4148 sod123
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PDF
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MARKING SMD PNP TRANSISTOR R 172
Abstract: SMD TRANSISTOR MARKING km SMD TRANSISTOR MARKING CODE YR TRANSISTOR SMD MARKING CODE SP transistor smd YR marking code YS SMD 2PA1774JQ YQ TRANSISTOR SMD MARKING CODE al 2PA1774JS SMD transistor MARKING CODE 43
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 1999 May 04 2000 Dec 12 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES • Power dissipation comparable to SOT23
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Original
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M3D425
2PA1774J
613514/03/pp8
MARKING SMD PNP TRANSISTOR R 172
SMD TRANSISTOR MARKING km
SMD TRANSISTOR MARKING CODE YR
TRANSISTOR SMD MARKING CODE SP
transistor smd YR
marking code YS SMD
2PA1774JQ YQ
TRANSISTOR SMD MARKING CODE al
2PA1774JS
SMD transistor MARKING CODE 43
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PDF
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Untitled
Abstract: No abstract text available
Text: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA • Low Capacitance (8.5pF typical) • ESD Protection Meeting IEC1000-4-2
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PJUSB05-4
OT23-6L
IEC1000-4-2
2002/95/EC
IEC61249
OT23-6L
OT23-6L,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1 µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA 0.009(0.22) 0.003(0.08) 0.067(1.70) 0.059(1.50) • ESD Protection Meeting IEC1000-4-2
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Original
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PJUSB05-4
OT23-6L
OT23-6L
IEC1000-4-2
2002/95/EC
IEC61249
OT23-6L,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: TMP100−EP DIGITAL TEMPERATURE SENSOR WITH I2C INTERFACE SGLS254B − JULY 2005 − REVISED OCTOBER 2013 D Controlled Baseline D Low Quiescent Current: 45 mA, 0.1-mA D D Wide Supply Range: 2.7 V to 5.5 V D Small SOT23-6 Package D D D D D † − One Assembly/Test Site, One Fabrication
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Original
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TMP100â
SGLS254B
OT23-6
12-Bits,
1255C
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PDF
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Untitled
Abstract: No abstract text available
Text: PJESD5V6LC-4~PJESD6V8LC-4 SOT23-5L FEATURES Unit：inch mm • Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minmum endurance of 8kV. • Capacitance is small with 10pF (at V R =0V,f=1MHz) between the 0.119(3.00)
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Original
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OT23-5L
IEC61000-4-2)
2011/65/EU
IEC61249
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PDF
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Untitled
Abstract: No abstract text available
Text: TMP100−EP DIGITAL TEMPERATURE SENSOR WITH I2C INTERFACE SGLS254B − JULY 2005 − REVISED OCTOBER 2013 D Controlled Baseline D Low Quiescent Current: 45 mA, 0.1-mA D D Wide Supply Range: 2.7 V to 5.5 V D Small SOT23-6 Package D D D D D † − One Assembly/Test Site, One Fabrication
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Original
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TMP100â
SGLS254B
OT23-6
12-Bits,
1255C
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PDF
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MARKING tAN SOT-23
Abstract: AAD SOT-143
Text: AC Terminator Quad Common Applications • AC termination ■ Reduce transmission line effects ■ Clock line and constant data rate line termination ■ Low pass filter ■ Power supply filter Electrical Characteristics E Resistance Range. . . . . . 10Ω to 10KΩ
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220pF
100mW
MARKING tAN SOT-23
AAD SOT-143
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PDF
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transistor AY PNP smd
Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 11 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23
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OCR Scan
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PDTA114EEF
MAM413
115002/00/02/pp8
transistor AY PNP smd
marking code RAD SMD Transistor npn
ph TRANSISTOR SMD MARKING CODE
A65 smd transistor
smd transistor JE
MARKING SMD pnp TRANSISTOR ec
smd transistor NG
TRANSISTOR SMD MARKING CODE ad
smd transistor GY
smd transistor code SG
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating
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Original
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MMBD3004BRM
OT23-6L
OT23-6L
2011/65/EU
IEC61249
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PDF
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b34 surface mount
Abstract: No abstract text available
Text: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating
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Original
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MMBD3004BRM
OT23-6L
OT23-6L
2002/95/EC
IEC61249
b34 surface mount
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating
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Original
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MMBD3004BRM
OT23-6L
2002/95/EC
IEC61249
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PDF
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varicap diode
Abstract: bb814
Text: BB814 Vishay Semiconductors Dual Varicap Diode FEATURES 3 • Silicon epitaxial planar diode • Common cathode • AEC-Q101 qualified 1 2 18108 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA APPLICATIONS Case: SOT23
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Original
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BB814
AEC-Q101
2002/95/EC
2002/96/EC
GS18/10K
10K/box
GS08/3K
15K/box
BB814-1
BB814-2
varicap diode
bb814
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PDF
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st smd diode marking code VU
Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage
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OCR Scan
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BAS40,
BAS40-04,
BAS40-05
BAS40-06
BAS40-07
OT143B
115002/00/04/pp8
st smd diode marking code VU
SMD diode sg 46
sot23 smd code ng
AVN marking SMD
smd code marking PE sot23
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PDF
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