Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
PMV31XN
O-236AB)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMV37EN
O-236AB)
|
PDF
|
STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
|
Original
|
OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
|
PDF
|
smd dual diode code 68
Abstract: B10 zener diode DIODE ZENER smd marking 72 marking code br 37 SMD sot23 Zener diode smd marking code w1 kdn 010 Zener diode smd marking code .18 SOT23 ZENER DIODE 5.1V smd Zener diode smd marking code 91 marking code 153 DIODE sod 23
Text: AZ23C2V7-AZ23C51 300mW, Dual SMD Zener Diode Small Signal Diode SOT-23 A Features F B E Wide zener voltage range selection : 2.7V to 51V VZ Tolerance ≦ ±5% C Moisture sensitivity level 1 D Matte Tin Sn lead finish Pb free version and RoHS compliant
|
Original
|
AZ23C2V7-AZ23C51
300mW,
OT-23
OD-123
MIL-STD-202,
C/10s
smd dual diode code 68
B10 zener diode
DIODE ZENER smd marking 72
marking code br 37 SMD sot23
Zener diode smd marking code w1
kdn 010
Zener diode smd marking code .18 SOT23
ZENER DIODE 5.1V smd
Zener diode smd marking code 91
marking code 153 DIODE sod 23
|
PDF
|
RG130
Abstract: smd marking code sot-23 infineon BSS670S2L Q67042-S4052
Text: BSS670S2L Final data OptiMOS=Small-Signal-Transistor Product Summary Feature N-Channel VDS Enhancement mode R DS on 650 m Logic Level ID 0.54 A 55 V SOT-23 3 2 1 VPS05161 Drain pin 3 Type BSS670S2L Package SOT-23 Ordering Code Q67042-S4052 Gate pin1
|
Original
|
BSS670S2L
OT-23
VPS05161
Q67042-S4052
RG130
smd marking code sot-23 infineon
BSS670S2L
Q67042-S4052
|
PDF
|
marking code m4 SMD Transistor
Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23
Text: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
PMV31XN
O-236AB)
771-PMV31XN-T/R
PMV31XN
marking code m4 SMD Transistor
NXP TRANSISTOR SMD MARKING CODE SOT23
fet SMD CODE PACKAGE SOT23
smd code marking HD SOT23
|
PDF
|
MARKING CODE 16 transistor sot23
Abstract: smd code marking HD SOT23
Text: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
PMV31XN
O-236AB)
MARKING CODE 16 transistor sot23
smd code marking HD SOT23
|
PDF
|
AH375
Abstract: AH375-WG-7 SC59
Text: AH375 SINGLE PHASE HALL EFFECT LATCH Description Pin Assignments Top View AH375 is an integrated Hall-Effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies
|
Original
|
AH375
AH375
DS31172
AH375-WG-7
SC59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH375 SINGLE PHASE HALL EFFECT LATCH Pin Assignments Description Top View AH375 is an integrated Hall-Effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies
|
Original
|
AH375
AH375
DS31172
|
PDF
|
c 337 25
Abstract: AH337 SC59 E hall sensor smd 4 pin AH337-PG-A
Text: AH337 SINGLE PHASE HALL EFFECT SWITCH Description Pin Assignments Top View AH337 is an unipolar Hall-Effect sensor for contactless switching applications. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide
|
Original
|
AH337
AH337
DS31050
c 337 25
SC59
E hall sensor smd 4 pin
AH337-PG-A
|
PDF
|
E hall sensor smd 4 pin
Abstract: smd code Hall smd hall smd code marking wl sot23 SMD Hall C SC59 AH373 hall sensor smd 80 L smd hall effect sensor 3 PIN hall effect sensor smd
Text: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier to amplify Hall voltage, and a
|
Original
|
AH373
AH373
DS31173
E hall sensor smd 4 pin
smd code Hall
smd hall
smd code marking wl sot23
SMD Hall C
SC59
hall sensor smd 80 L
smd hall effect sensor
3 PIN hall effect sensor smd
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH337 SINGLE PHASE HALL EFFECT SWITCH Pin Assignments Description Top View AH337 is an unipolar Hall-Effect sensor for contactless switching applications. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide
|
Original
|
AH337
AH337
DS31050
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier to amplify Hall voltage, and a
|
Original
|
AH373
AH373
DS31173
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH173 INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE Description Pin Assignments AH173 is a single-digital-output Hall-Effect latch sensor with pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic
|
Original
|
AH173
AH173
DS31044
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
PMV170UN
O-236AB)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
PMV30UN2
O-236AB)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CC256x Bluetooth Smart Ready Controller Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
|
Original
|
CC256x
SWRS121A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with internal TOP View pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier
|
Original
|
AH373
AH373
DS31173
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with internal TOP View pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier
|
Original
|
AH373
AH373
DS31173
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with internal TOP View pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier
|
Original
|
AH373
AH373
DS31173
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
PMV20XNE
O-236AB)
|
PDF
|
smd code 9fc
Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Text: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti fier utilize advanced processing techniques to
|
OCR Scan
|
S6702
OT-23.
BA-481
EIA-541.
smd code 9fc
smd 2d 1002 -reel
smd diode 2d
mosfet ir 840
SOT-23 marking 2f p-Channel
sot-23 MARKING CODE nm
|
PDF
|
SMD MARKING CODE C17
Abstract: MARKING MON sot-23 smd diode marking hg marking code 6c SMD IRLMSS703 l00a HG marking sot23
Text: PD 9.1540 International I G R Rectifier I IR L M S 1 9 0 2 PRELIMINARY HEXFET Power MOSFET Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 20V ^D S(on) = 0 .1 0 Q Description Fifth Generation HEXFETs from International Rectifier
|
OCR Scan
|
OT-23.
EIA-411
SMD MARKING CODE C17
MARKING MON sot-23
smd diode marking hg
marking code 6c SMD
IRLMSS703
l00a
HG marking sot23
|
PDF
|
TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
|
OCR Scan
|
B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
|
PDF
|
