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    MARKING CODE C2 AMPLIFIER Search Results

    MARKING CODE C2 AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CLC412A/B2A Rochester Electronics LLC CLC412 - Op Amp - Dual marked (5962-9471901M2A) Visit Rochester Electronics LLC Buy
    UA733M/BCA Rochester Electronics LLC UA733 - Differential Video Amplifier - Dual marked (8418501CA) Visit Rochester Electronics LLC Buy
    UA733M/BIA Rochester Electronics LLC UA733 - Differential Video Amplifier - Dual marked (8418501IA) Visit Rochester Electronics LLC Buy
    CLC425A/BPA Rochester Electronics LLC CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) Visit Rochester Electronics LLC Buy

    MARKING CODE C2 AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


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    PDF OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS

    Untitled

    Abstract: No abstract text available
    Text: BC857BS 45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Ultra-Small Surface Mount Package • • Ideally Suited for Automated Insertion • • For switching and AF Amplifier Application • Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


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    PDF BC857BS J-STD-020 AEC-Q101 MIL-STD202, OT363 DS30373

    pnp k3w

    Abstract: BC857BSQ-7-F
    Text: BC857BS DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Ideally Suited for Automated Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package “Lead-Free”, RoHS Compliant Note 1


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    PDF BC857BS AEC-Q101 OT363 J-STD-020 MIL-STD-202, OT363 BC857BS-7-F BC857BS-13-F BC857BSQ-7-F pnp k3w BC857BSQ-7-F

    SOT363 6 BC847BS

    Abstract: No abstract text available
    Text: BC847BS DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Ultra-Small Surface Mount Package   Ideally Suited for Automated Insertion   For switching and AF Amplifier Application  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


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    PDF BC847BS AEC-Q101 OT363 J-STD-020 MIL-STD202, OT363 DS30222 SOT363 6 BC847BS

    SMD INDUCTOR marking code C4

    Abstract: national marking code national semiconductor part marking NATIONAL SEMICONDUCTOR MARKING TYPE national marking date code 1505 marking NR3015 C1005X5R1A104KT an-1505 national LM3207TL
    Text: National Semiconductor Application Note 1505 Jeffrey Colwell July 2007 Introduction tegrated LDO with a nominal has a maximum Iref of 10 mA. See Ordering Information table on page 2 for Voltage Options. The LM3207 offers superior performance for powering WCMDA / CDMA RF power amplifiers and similar applications.


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    PDF LM3207 AN-1505 SMD INDUCTOR marking code C4 national marking code national semiconductor part marking NATIONAL SEMICONDUCTOR MARKING TYPE national marking date code 1505 marking NR3015 C1005X5R1A104KT an-1505 national LM3207TL

    S6419

    Abstract: No abstract text available
    Text: Low Power Audio Amplifier Semiconductor S6419/P Description http:// www.auk.co.kr The S6419/P is a low power audio amplifier integrated circuit, intended for the communication applications, such as in speakerphones. It provides differential speaker outputs to


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    PDF S6419/P S6419/P KSD-I7F022-001 S6419

    MLX90242LUA-GAA-000

    Abstract: smd hall effect sensor 175 hall sensor MLX90242 smd code 24 hall effect smd marking CODE WB 12 SMD 6 PIN IC MARKING CODE SE marking code WW SMD
    Text: MLX90242 Linear Hall Effect Sensor Features and Benefits Quad Switched Hall Plate / Chopper Stabilized Amplifier Ratiometric Output for A/D Interface Low Quiescent Voltage Thermal Drift Small Plastic Packages TSOT, TO-92 RoHS compliant TSOT package Applications


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    PDF MLX90242 MLX90242 GAA-000 MLX90242LUA-GAA-000 smd hall effect sensor 175 hall sensor smd code 24 hall effect smd marking CODE WB 12 SMD 6 PIN IC MARKING CODE SE marking code WW SMD

    Untitled

    Abstract: No abstract text available
    Text: Low Power Audio Amplifier Semiconductor S6419/P Description http:// www.auk.co.kr The S6419/P is a low power audio amplifier integrated circuit, intended for the communication applications, such as in speakerphones. It provides differential speaker outputs to


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    PDF S6419/P S6419/P KSD-I7F022-001

    Untitled

    Abstract: No abstract text available
    Text: TS34119 Low Power Audio Amplifier SOP-8 DIP-8 Pin assignment: 1. CD 8. VO2 2. FC2 7. Gnd 3. FC1 6. Vcc 4. Vin 5. VO1 General Description The TS34119 is a low power audio amplifier, it integrated circuit intended primarily for telephone applications such


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    PDF TS34119 TS34119

    A07 RF Amplifier

    Abstract: audio amplifier SOP RF AMPLIFIER marking A07 TS34119CS 27BSC TS34119 TS34119CD power audio amplifier design
    Text: TS34119 Low Power Audio Amplifier SOP-8 DIP-8 Pin assignment: 1. CD 8. VO2 2. FC2 7. Gnd 3. FC1 6. Vcc 4. Vin 5. VO1 General Description The TS34119 is a low power audio amplifier, it integrated circuit intended primarily for telephone applications, such


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    PDF TS34119 TS34119 A07 RF Amplifier audio amplifier SOP RF AMPLIFIER marking A07 TS34119CS 27BSC TS34119CD power audio amplifier design

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF BFR193L3

    Untitled

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGA231N7

    SMD MARKING CODE f2

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGA231N7 SMD MARKING CODE f2

    marking FA

    Abstract: No abstract text available
    Text: BFR340L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  Transition frequency of 14 GHz  High insertion gain 1  Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFR340L3 marking FA

    K1F transistor

    Abstract: marking k1f
    Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic


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    PDF BC847BS OT-363, J-STD-020A MIL-STD-202, OT-363 DS30222 K1F transistor marking k1f

    K1F transistor

    Abstract: BC847BS BC847BS-7 J-STD-020A
    Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic


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    PDF BC847BS OT-363 OT-363, J-STD-020A MIL-STD-202, DS30222 K1F transistor BC847BS BC847BS-7 J-STD-020A

    SOT363 6 BC847BS

    Abstract: K1F transistor
    Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic


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    PDF BC847BS OT-363 OT-363, J-STD-020A MIL-STD-202, DS30222 SOT363 6 BC847BS K1F transistor

    Circuit diagram of 12v 1W LED driver

    Abstract: led 3w 12v 4148 diode 3W LED
    Text: Advanced Power Electronics Corp. Preliminary APE1831/A 1A, 0.25V FEEDBACK VOLTAGE STEP-DOWN SWITCHING REGULATORS FOR LED DRIVER GENERAL DESCRIPTION APE1831/A consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS


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    PDF APE1831/A APE1831/A Circuit diagram of 12v 1W LED driver led 3w 12v 4148 diode 3W LED

    K1F transistor

    Abstract: No abstract text available
    Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic


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    PDF BC847BS OT-363 OT-363, J-STD-020A MIL-STD-202, DS30222 K1F transistor

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFR360T marking FB

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFR181T

    marking FA

    Abstract: BFR340T
    Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFR340T marking FA BFR340T

    Untitled

    Abstract: No abstract text available
    Text: BGA825L6S Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.1, 2012-10-17 RF & Protection Devices Edition 2012-10-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG


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    PDF BGA825L6S

    BGA915

    Abstract: No abstract text available
    Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGA915N7 BGA915