MARKING CODE C7 TRANSISTOR Search Results

MARKING CODE C7 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MARKING CODE C7 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB	Original	STAC9200 2002/95/EC STAC244B STAC9200 DocID025416	PDF
Untitled Abstract: No abstract text available Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	BFR193L3	PDF
marking FC Abstract: No abstract text available Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR380L3 marking FC	PDF
marking FA Abstract: No abstract text available Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340L3 marking FA	PDF
infineon marking L2 Abstract: BFR193L3 Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR193L3 infineon marking L2 BFR193L3	PDF
BFR193L3 Abstract: BFR380L3 marking FC Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description	Original	BFR380L3 BFR193L3 BFR380L3 marking FC	PDF
BFR193L3 Abstract: BFR340L3 marking FA Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340L3 BFR193L3 BFR340L3 marking FA	PDF
Infineon Technologies transistor 4 ghz Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description	Original	BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR360L3	PDF
Infineon Technologies transistor 4 ghz Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101	Original	BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA	PDF
C5 MARKING TRANSISTOR Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2 Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)	Original	BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2	PDF
Untitled Abstract: No abstract text available Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european	Original	SD4933 2002/95/EEC SD4933	PDF
Untitled Abstract: No abstract text available Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures	Original	SD2931-10 SD2931-10 SD2931 SD2931	PDF
LSE B9 transformer Abstract: SD4933MR LSE B6 transformer SD4933 Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz	Original	SD4933MR 2002/95/EEC M177MR SD4933MR LSE B9 transformer LSE B6 transformer SD4933	PDF

Bead 220 ohm 2.5A Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures	Original	SD2931-10 SD2931-10 SD2931 SD2931 Bead 220 ohm 2.5A VK200 marking code transistor ND sd2931-10w	PDF
sd2931-10w Abstract: marking code oz 09-Sep-2004 Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures	Original	SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004	PDF
Arco 423 Abstract: choke vk200 sd2931-10w Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower	Original	SD2931-10 SD2931-10 SD2931 Arco 423 choke vk200 sd2931-10w	PDF
marking D12 Abstract: UMD12N DTA144E DTC144E EMD12 T148 Text: EMD12 / UMD12N / FMC7A Transistors Power management dual digital transistors EMD12 / UMD12N / FMC7A zExternal dimensions (Units : mm) zFeatures 1) Both the DTA144E and DTC144E in a EMT or UMT or SMT package. 0.22 (5) (3) (2) R1 FMC7A (4) (3) (1) (1) R2 R1	Original	EMD12 UMD12N DTA144E DTC144E UMD12N EMD12 10/-10mA, marking D12 T148	PDF
BFR360L3 Abstract: BFR193L3 Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR360L3 BFR360L3 BFR193L3	PDF
Untitled Abstract: No abstract text available Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz	Original	SD4933MR 2002/95/EEC M177MR SD4933MR DocID023664	PDF
BFR360L3 Abstract: BFR193L3 Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101	Original	BFR360L3 BFR360L3 BFR193L3	PDF
Philips Capacitor Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency	Original	BFG10W/X OT343 Philips Capacitor transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent	PDF
d12n Abstract: d12n marking md-12n marking code C7 transistor D12NF marking d12n AC143 Text: UMC1N / FMC1A UMD12N / FMC7A Transistors I Digital Transistor Dual Digital Transistors for Power Management UMC1N / FMC1A •Features 1 ) •A b so lute maximum ratings (Ta— 2 5 t ! D T A 1 4 3 T a n d D T C 1 4 3 T tra n s is to rs a r e h o u s e d Param eter	OCR Scan	UMD12N 120mW 20CImW -475-A C144E) d12n d12n marking md-12n marking code C7 transistor D12NF marking d12n AC143	PDF
2F PNP SOT23 Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23 Text: IOW NOISE SMI TRANSISTORS DESCRIPTION •Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed lowcurrent specifications for noise, gain and saturation voltages.	OCR Scan	PMBT5089 BC849B BC849C PMBT5088 BCF32 BCF33 BC850B BC850C BCF81 PMBT6429 2F PNP SOT23 MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23	PDF

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MARKING CODE C7 TRANSISTOR Search Results

MARKING CODE C7 TRANSISTOR Result Highlights (5)

MARKING CODE C7 TRANSISTOR Datasheets Context Search

Untitled

Untitled

marking FC

marking FA

infineon marking L2

BFR193L3

BFR193L3

Infineon Technologies transistor 4 ghz

Untitled

Infineon Technologies transistor 4 ghz

C5 MARKING TRANSISTOR

Untitled

Untitled

LSE B9 transformer

Bead 220 ohm 2.5A

sd2931-10w

Arco 423

marking D12

BFR360L3

Untitled

BFR360L3

Philips Capacitor

d12n

2F PNP SOT23