Untitled
Abstract: No abstract text available
Text: Automotive Grade AUIR0815S BUFFER GATE DRIVER IC Features • High peak output current > 10A • Low propagation delay time • Negative turn off bias can be applied to VEE using an external supply • Two output pins permit to choose different Ron and Roff resistors.
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AUIR0815S
AUIR0815
250ns
260ns
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AUIR0815STR
Abstract: AUIRS2117 st 13001 TRANSISTOR AUIR0815 ssd 545 dc drive
Text: Automotive Grade AUIR0815S BUFFER GATE DRIVER IC Features • High peak output current > 10A • Low propagation delay time • Negative turn off bias can be applied to VEE using an external supply • Two output pins permit to choose different Ron and Roff resistors.
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AUIR0815S
AUIR0815
250ns
260ns
AUIR0815STR
AUIRS2117
st 13001 TRANSISTOR
ssd 545 dc drive
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marking 1F 6 pin
Abstract: transistor marking 1f 1F TRANSISTOR
Text: UNISONIC TECHNOLOGIES CO., LTD LR3XXYYB Preliminary CMOS IC 150mA 2CH LDO REGULATOR DESCRIPTION The UTC LR3XXYYB are CMOS voltage regulator ICs that have high output voltage accuracy, low dropout, low supply current, and high ripple rejection. Every voltage regulator IC of UTC
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150mA
QW-R125-002
marking 1F 6 pin
transistor marking 1f
1F TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX15091/MAX15091A 2.7V to 18V, 9A, Integrated Hot-Swap Solution with Current Report Output General Description Features The MAX15091/MAX15091A ICs are integrated solutions for hot-swap applications requiring the safe insertion and
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MAX15091/MAX15091A
MAX15091/MAX15091A
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX15091/MAX15091A 2.7V to 18V, 9A, Integrated Hot-Swap Solution with Current Report Output General Description Features The MAX15091/MAX15091A ICs are integrated solutions for hot-swap applications requiring the safe insertion and
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MAX15091/MAX15091A
MAX15091/MAX15091A
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pml 003 am
Abstract: transistor c s x 13001 transistor te 13001 ic pml 003 am R0815 SP 13001 AUIR0815 SP 13001 transistor PAR/AEC-Q100
Text: AUIR R0815 5S AUTOMOT A TIVE GRA ADE Octo ober 26, 20 011 BUFFER GATE G D DRIVER R IC Feattures • High peak output currentt > 10A ation delay tiime • Low propaga an be applied d to VEE using g an external • Negative turrn off bias ca
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R0815
AUIR0815
pml 003 am
transistor c s x 13001
transistor te 13001
ic pml 003 am
SP 13001
SP 13001 transistor
PAR/AEC-Q100
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MARKING 720 SOT23
Abstract: SOT23 MARKING CODE 720 BCX71H BCX71J BCX71K BCX70 BCX71 BCX71G transistor with marking BH BJ MARKING CODE
Text: Philips Sem iconductors Product specification PNP general purpose transistors BCX71 series FE A T U R E S PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in
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BCX71
BCX70
BCX71G
BCX71J
BCX71H
BCX71K
MARKING 720 SOT23
SOT23 MARKING CODE 720
transistor with marking BH
BJ MARKING CODE
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PDF
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BCW69
Abstract: BCW70 BCW71 BCW72 sot23 marking JR
Text: Philips Sem iconductors Product specification PNP general purpose transistors BCW69; BCW70 FE A T U R E S PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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OCR Scan
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BCW69;
BCW70
BCW71
BCW72.
BCW69
BCW70
BCW72
sot23 marking JR
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PDF
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Untitled
Abstract: No abstract text available
Text: BEE D • flS 3 b 3 2 Q 0G172ÔÜ S « S IP PNP Silicon A F Transistors SIEM EN S/ • • • SPC L-i T ' - l ' i - J *7 SEM ICO N DS _ SMBTA55 S M B T A 56 High breakdown voltage Low oollector-emitter saturation voltage Complementary types: S M B T A 05, S M B TA 06 NPN
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OCR Scan
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0G172Ã
SMBTA55
Q68000-A7420
Q68000-A7421
Q68000-A3386
Q68000-A2882
BTA55
23b320
/JFE-10
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PDF
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LAE4001R
Abstract: SC15 MGL069
Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.
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OCR Scan
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LAE4001R
PINNING-SOT100
MBC878
OT100.
LAE4001R
SC15
MGL069
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor
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OCR Scan
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BCV61
BCV61
T143B
BCV62.
BCV61conductors
115002/00/03/pp8
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PDF
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3Kp Transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor
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OCR Scan
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BCV62
T143B
BCV61.
115002/00/03/pp8
3Kp Transistor
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PDF
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hp 502 transistor
Abstract: t918 ma t918
Text: Central C M P T918 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C EN TR AL SEM IC O N D U C TO R CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency VHF/UHF
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CMPT918
OT-23
10ntrtlJ7
500MHz
200MHz
60MHz
hp 502 transistor
t918
ma t918
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marking code 1F
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T FEATURES PINNING • Low curren t max. 100 mA
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OCR Scan
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BC846T;
BC847T
SC-75
BC857T.
BC846AT
BC847AT
MAM348
115002/00/02/pp8
marking code 1F
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PDF
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MARKING 3F TRANSISTOR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 07 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC856W; BC857W PNP general purpose transistors FEATURES PINNING • Low current max. 100 mA
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OCR Scan
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BC856W;
BC857W
OT323
BC846W
BC847W.
BC856W
BC856AW
BC856BW
BC857W
OT323)
MARKING 3F TRANSISTOR
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PDF
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tbc857c
Abstract: TBC857B
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T FEATURES PINNING • Low curren t max. 100 mA
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OCR Scan
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BC856T;
BC857T
BC847T.
BC856AT
BC857AT
MAM362
115002/00/02/pp8
tbc857c
TBC857B
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING • High current max. 500 mA PIN
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OCR Scan
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BC817W
BC807W
17-16W
17-25W
17-40W
18-16W
18-25W
18-40W
115002/00/03/pp8
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PDF
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C847
Abstract: el 847 c847
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING • Low curren t max. 100 mA
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OCR Scan
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BC846;
BC847
BC857.
BC847B
BC847C
MAM255
115002/00/03/pp8
C847
el 847 c847
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PDF
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C849
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Aug 06 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low curren t max. 100 mA
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OCR Scan
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BC849;
BC850
BC860.
BC850B
BC850C
MAM255
115002/00/05/pp8
C849
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PDF
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TRANSISTOR gy 740
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 02 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING • Low cu rrent max. 30 mA PIN • Low voltage (max. 20 V).
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OCR Scan
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BFS19
115002/00/03/pp8
TRANSISTOR gy 740
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T5550
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PMST5550; PMST5551 NPN high-voltage transistors 1999 Apr 29 Product specification Supersedes data of 1997 May 20 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors PMST5550; PMST5551
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OCR Scan
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PMST5550;
PMST5551
T5401.
T5550
115002/00/04/pp8
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PDF
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marking code CB en ic
Abstract: No abstract text available
Text: KST5088/5089 NPN EPITAXIAL SILICO N TRANSÌSTOR LOW NOISE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta = 25°C r Characteristic Symbol Collector-Base Voltage Rating Unit 35 30 V V 30 25 4.5 50 350 150 •V V cB O KST5088 KST5089 Collector-Emitter Voltage
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OCR Scan
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KST5088/5089
KST5088
KST5089
ST5089
marking code CB en ic
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PDF
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CMXT2222A
Abstract: NPN transistor marking NY
Text: Data Sheet Central' CMXT2222A Sem iconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:
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CMXT2222A
OT-26
CMXT2222A
150mA,
OT-26
NPN transistor marking NY
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PDF
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C849
Abstract: BC850 SOT23 276.C850
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 06 PHILIPS Philips Semiconductors Product specification
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OCR Scan
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BC849;
BC850
BC860.
115104/00/04/pp8
C849
BC850 SOT23
276.C850
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PDF
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