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    MARKING CODE CB SOT23 Search Results

    MARKING CODE CB SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING CODE CB SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code CB sot23

    Abstract: voltage divider 100k SOT23 MARKING 50k 50K MARKING SOT23
    Text: MODEL SS103VD Voltage divider circuit Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments Industry Standard Packaging 3 lead SOT23 Ratio Tolerances


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    SS103VD MIL-STD-2002, MIL-R-83401) OT-23 marking code CB sot23 voltage divider 100k SOT23 MARKING 50k 50K MARKING SOT23 PDF

    egs SOT23

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B


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    BCW66 BCW68 BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* BCW66 BCW66K egs SOT23 PDF

    bcw66

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B


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    BCW66 BCW68 BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* bcw66 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B


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    BCW66 BCW68 BCW66F BCW66G BCW66H PDF

    marking code CB sot23

    Abstract: 0345K MIL-R-83401 SS103
    Text: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1


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    SS103 100Vdc MIL-STD-2002, -25dB MIL-R-83401) Mechan007 OT-23 marking code CB sot23 0345K MIL-R-83401 PDF

    ss103

    Abstract: No abstract text available
    Text: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1


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    SS103 MIL-STD-2002, 100Vdc -25dB MIL-R-83401) OT-23 PDF

    POLAR0.8

    Abstract: Marking code mps RB400
    Text: WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reversethat leakage


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    FM120-M+ MMBTH10LT1 FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH POLAR0.8 Marking code mps RB400 PDF

    marking 2u

    Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
    Text: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage


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    SMBTA64 VPS05161 marking 2u marking code 10 sot23 S2V 3 BCW66 SMBTA64 PDF

    MBTA42

    Abstract: 12p sot-23
    Text: WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    FM120-M+ FM1200-M+ OD-123+ MMBTA42LT1 OT-23 3000/Tape FM120-MH FM130-MH FM140-MH FM150-MH MBTA42 12p sot-23 PDF

    SOT23-5 pwm generator

    Abstract: AP1624 FDS6612 SS240 345KHZ
    Text: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz(±15%) - Stand-by Current: ISTB=3µA.(Typ.) - Pb-Free Package: SOT23-5


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    AP1624 300kHz OT23-5 AP1624 SOT23-5 pwm generator FDS6612 SS240 345KHZ PDF

    SOT23-5 pwm generator

    Abstract: PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 AP1624 FDS6612 AF230
    Text: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz(±15%) - Stand-by Current: ISTB=3µA.(Typ.) - Pb-Free Package: SOT23-5


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    AP1624 300kHz OT23-5 AP1624 SOT23-5 pwm generator PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 FDS6612 AF230 PDF

    MBT2222 equivalent

    Abstract: MARKING M1B
    Text: WILLAS FM120-M+ THRU MMBT2222 A LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers


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    FM120-M+ MMBT2222 FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH MBT2222 equivalent MARKING M1B PDF

    MBTA92

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V HighMOUNT Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    FM120-M+ FM1200-M+ OD-123+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH MBTA92 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA14/ MMBTA14 NPN Silicon Darlington Transistor • High DC current gain • High collector current 2 3 • Low collector-emitter saturation voltage Type SMBTA14/ MMBTA14 Marking s1N 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter


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    SMBTA14/ MMBTA14 PDF

    Untitled

    Abstract: No abstract text available
    Text: D AC 7 512 DAC7571 www.ti.com SLAS374D – FEBRUARY 2003 – REVISED JANUARY 2014 +2.7 V to +5.5 V, I2C INTERFACE RECEIVE ONLY , VOLTAGE OUTPUT, 12-BIT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC7571 FEATURES 1 • • • • • • • 2 • •


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    DAC7571 SLAS374D 12-BIT DAC7571s DAC7571 PDF

    BSS79

    Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


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    BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS79 BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA


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    bbS3T31 DD3Sfi62 PMBT5551 PDF

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


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    Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE PDF

    YL2 sot23

    Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.


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    BF547 bas500 YL2 sot23 bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412 PDF

    IMBT4403

    Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
    Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C


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    G0D40fl3 OT-23 IMBT3903 IMBT3904 IMBT4400 10Ol3Â IMBT4401 10CX3> IMBT2222 BC807-16 IMBT4403 5n80 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A PDF

    IMBT4401

    Abstract: No abstract text available
    Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A


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    O-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A PDF

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


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    FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: PMBT5551 SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 package. QUICK REFERENCE DATA Collector-base voltage open emitter VCBO max. Collector-emitter voltage (open base)


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    PMBT5551 PMBT5551 PDF

    sot-23 MARKING CODE G1

    Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
    Text: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


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    BFS20 OT-23 BFS20 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 sot-23 MARKING CODE G1 C5 MARKING TRANSISTOR sot 23 marking code 2t sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes PDF