IDT CODE DATE marking FORMAT
Abstract: 89HPES24T6G2ZCALG IDT CODE DATE marking 89HPES24T6G2ZCALGI 89HPES16T4AG2ALGI 89hpes16t4ag2zcalg 89HPES24T6G2ZBALI8 89HI0524G2PS 89HPES6T6G2Z 89HPES16T4AG2
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: TB0905-02 DATE: 29-May-2009 Product Affected: 19mm x 19mm FCBGA-324 Date Effective: Contact: Title: Phone #: Fax #: E-mail: MEANS OF DISTINGUISHING CHANGED DEVICES:
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TB0905-02
29-May-2009
FCBGA-324
29-Aug-2009
FHPES24T3G2ZCALG8
89HPES24T3G2ZCALGI
89HPES24T3G2ZCALI
89HPES24T3G2ZCALI8
89HPES24T6G2ZAALG
IDT CODE DATE marking FORMAT
89HPES24T6G2ZCALG
IDT CODE DATE marking
89HPES24T6G2ZCALGI
89HPES16T4AG2ALGI
89hpes16t4ag2zcalg
89HPES24T6G2ZBALI8
89HI0524G2PS
89HPES6T6G2Z
89HPES16T4AG2
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epson MARKING CODE
Abstract: TQS-530S-7G 535AB TOYO crystal toyocom crystal filter
Text: SAW Filter SAW FILTER FOR CELLULAR / RF TQS-530S-7G /-516EA-7G TQS-535AB-7G /-539A-7G •Miniature size and low profile using FCB technology •Balanced termination type and unbalanced termination type are available. •Lead Pb -free : Lead free completely
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TQS-530S-7G
/-516EA-7G
TQS-535AB-7G
/-539A-7G
TQS-530S-7G
TQS-516EA-7G
TQS-535AB-7G
TQS-539A-7G
epson MARKING CODE
535AB
TOYO crystal
toyocom crystal filter
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sd 20n60
Abstract: FCB20N60
Text: SuperFET TM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60
FCB20N60
165pF)
FCB20N60TM
sd 20n60
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11N60
Abstract: MOSFET 11N60 11n60 dc
Text: SuperFET TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB11N60
FCB11N60
FCB11N60TM
11N60
MOSFET 11N60
11n60 dc
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HEL16
Abstract: DEVICE MARKING CODE table onsemi marking marking code onsemi marking code onsemi Diode kel33 on semiconductor traceability marking soic HEL32 HEL12 HEL31 HEL05
Text: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and
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AND8002/D
HEL16
DEVICE MARKING CODE table
onsemi marking
marking code onsemi
marking code onsemi Diode
kel33
on semiconductor traceability marking soic
HEL32
HEL12 HEL31
HEL05
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KLT20
Abstract: k1648 klt22 KEL32 MC100 HEP64 KLT21 LP17 KEP32 HEP139
Text: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and
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AND8002/D
KLT20
k1648
klt22
KEL32
MC100
HEP64
KLT21
LP17
KEP32
HEP139
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BC 170 transistor
Abstract: No abstract text available
Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration
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17-16W
BC807W,
BC808W
OT-323
Q62702-C2321
18-16W
Q62702-Ã
18-25W
Q62702-C2323
18-40W
BC 170 transistor
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5Cs transistor
Abstract: transistor 5bs 5BS transistor
Text: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration
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BC817W,
BC818W
07-16W
07-25W
07-40W
08-16W
08-25W
08-40W
Q62702-C2325
Q62702-C2326
5Cs transistor
transistor 5bs
5BS transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C
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OCR Scan
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PDF
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Q62702-F102
OT-23
IS21el2
IS21/S
aS35bG5
Giai71b
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BC 170 transistor
Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
Text: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W
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OCR Scan
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BC807W,
BC808W
17-16W
17-25W
17-40W
18-16W
18-25W
18-40W
Q62702-C2320
Q62702-C2278
BC 170 transistor
bc 471
transistor bc 470
6bs transistor
SOT-323 N
transistor 6cs
1B marking transistor marking 6Bs
bc 170 c
sot 323 lb
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M
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BCP53M
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
6E35bOS
02BShD5
B35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM
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47kfl,
OT-323
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package
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Q62702-F1250
OT-23
IS21/S
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W
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Q62702-C2291
OT-323
Therma148W
235L05
0235b05
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Untitled
Abstract: No abstract text available
Text: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R-| = '\0kQ, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183W WMs Q62702-C2276 1= B Package 2= E 3=C SOT-323
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Q62702-C2276
OT-323
Nov-27-1996
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 158 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor Ri=2.2ki2, R2=47k£2 □ Pin Configuration Q62702-C2338 1 =B Package II CO WIs O Marking Ordering Code BCR 158 LU II
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Q62702-C2338
OT-23
300ns;
D1S0773
D1HG77H
fl53SbQS
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Untitled
Abstract: No abstract text available
Text: BCR 119W NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=4.7k£2 c FI 4 Tr Type Marking Ordering Code Pin Config uration BCR 119W WKs 1= B Q62702-C2285 Package 2= E 3=C SOT-323
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Q62702-C2285
OT-323
ec-05
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Untitled
Abstract: No abstract text available
Text: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E
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Q62702-C2282
OT-323
ov-27
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
BFG193
Q62702-F1291
OT-223
235b05
Q12177D
D1E1771
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 553 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=2.2k£i, Ft2=2.2k£2 ^ FI 4 a r ^ r z Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371
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Q62702-C2371
OT-23
fl235bG5
0235bD
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23
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47kii)
Q62702-C2263
OT-23
flE35b05
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ON Semiconductor marking 821
Abstract: No abstract text available
Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings
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10ki2
10kS2)
Q62702-C2385
OT-23
III11
ON Semiconductor marking 821
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BFR183W
Abstract: No abstract text available
Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1493
OT-323
900MHz
BFR183W
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23
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10kii
10kii)
Q62702-C2385
OT-23
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