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    MARKING CODE FET Search Results

    MARKING CODE FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    AT91SAM3U4E

    Abstract: SAM3U SUPC_SR Atmel SAM-ICE AT91SAM3U4 SAM3u ADC12B atmel Lot Code Identification atmel 1232 Atmel MARKING CODE
    Text: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW


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    PDF 6483B 09-Apr-10 AT91SAM3U4E AT91SAM3U2E AT91SAM3U1E AT91SAM3U4C AT91SAM3U2C AT91SAM3U1C AT91SAM3U4E SAM3U SUPC_SR Atmel SAM-ICE AT91SAM3U4 SAM3u ADC12B atmel Lot Code Identification atmel 1232 Atmel MARKING CODE

    ADC12B

    Abstract: atmel 1224 AT91SAM3U4C AT91SAM3U4 SAM3u AT91SAM3U4E Atmel MARKING CODE AT91SAM3U1C ATMEL 1212 AT91SAM3U2E
    Text: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW


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    PDF 6483C 09-Aug-10 AT91SAM3U4E AT91SAM3U2E AT91SAM3U1E AT91SAM3U4C AT91SAM3U2C AT91SAM3U1C ADC12B atmel 1224 AT91SAM3U4C AT91SAM3U4 SAM3u AT91SAM3U4E Atmel MARKING CODE AT91SAM3U1C ATMEL 1212 AT91SAM3U2E

    1N4148WT

    Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
    Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height


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    PDF 1N4148WT 1N4448WT 1N914BWT 1N4148WT 1N4448WT OD523F OD-523F marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change

    qs marking sot-89

    Abstract: QS 100 NPN Transistor FJC1308 FJC1963 SOT89 MARKING CODE B2 fairchild marking code
    Text: FJC1963 NPN Epitaxial Silicon Transistor Features • • • • Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 1 9 6 3 P Y W W SOT-89 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF FJC1963 FJC1308 OT-89 qs marking sot-89 QS 100 NPN Transistor FJC1308 FJC1963 SOT89 MARKING CODE B2 fairchild marking code

    DSKTJ05

    Abstract: transistor code book FET MARKING CODE
    Text: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)


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    PDF DSKTJ05 DSKTJ05 transistor code book FET MARKING CODE

    CFY 10

    Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
    Text: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration


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    PDF Q62703-F106 Q62703-F107 Q62703-F108 CFY 10 gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106

    transistor code book

    Abstract: DSKTJ08
    Text: DSKTJ08 Tentative Total pages page DSKTJ08 Silicon N-channel junction FET For AF impedance converter Marking Symbol : CT, CU Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)


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    PDF DSKTJ08 transistor code book DSKTJ08

    marking code dn5c

    Abstract: dn5c DN3525 DN3525N8 DN3525NW
    Text: DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code


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    PDF DN3525 O-243AA* 300mA DN3525N8 DN3525NW O-243AA: OT-89. 200mA marking code dn5c dn5c DN3525 DN3525N8 DN3525NW

    dn5c

    Abstract: marking code dn5c
    Text: DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code


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    PDF DN3525 300mA O-243AA* DN3525N8 DN3525NW O-243AA: OT-89. 200mA 150mA, dn5c marking code dn5c

    fl6l5201

    Abstract: No abstract text available
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


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    PDF FL6L5201 fl6l5201

    DN3525NW

    Abstract: marking code dn5c dn5c DN3525 DN3525N8
    Text: DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code


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    PDF DN3525 O-243AA* 300mA DN3525N8 DN3525NW O-243AA: OT-89. 200mA DN3525NW marking code dn5c dn5c DN3525 DN3525N8

    Untitled

    Abstract: No abstract text available
    Text: DN3525 DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C* Where *= 2-week alpha date code


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    PDF DN3525 O-243AA* 300mA DN3525N8 DN3525NW O-243AA: OT-89. DSPD-3TO243AAN8 A052404

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


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    PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14

    marking AGs sot-23

    Abstract: No abstract text available
    Text: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code


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    PDF LNE150 O-236AB* LNE150K1 LNE150ND forTO-236AB: OT-23. 500nA 100S2, 7732RS G0042S2 marking AGs sot-23

    cfy 19 siemens

    Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
    Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    PDF VXM05208 Q62703-F106 Q62703-F107 Q62703-F108 0Qfcj75Cn cfy 19 siemens cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 CFY 10

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


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    PDF V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a

    bf544

    Abstract: siemens fet to92 700M
    Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


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    PDF Q62702-F1231 eht07043 eht07044 EHM07002 fl23SbDS 0Qbb777 bf544 siemens fet to92 700M

    SOT-23 Marking code MU

    Abstract: AS SOT-23 F 5 Ld SOT-23 N1T SOT23
    Text: TN2130 Low Threshold Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / Order Number / Package Product marking for SOT-23: RdS<ON max) ^GS(th) BVoos (max) TO-236AB* N1T* 300V 25Q 2.4V TN2130K1 where * = 2-week alpha date code


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    PDF TN2130 O-236AB* TN2130K1 OT-23: OT-23. TN2130 SOT-23 Marking code MU AS SOT-23 F 5 Ld SOT-23 N1T SOT23

    supertex dmos

    Abstract: No abstract text available
    Text: Supertexinc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N Order Number / Package ' d (ON) BVDOs (max) (min) TO-236AB* 500V 1.0K£1 3.0mA LNE150K1 Product marking for TO-236AB: Die NEE* LNE150ND where * = 2-week alpha date code


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    PDF LNE150 O-236AB* LNE150K1 LNE150ND O-236AB: OT-23. 300ns supertex dmos

    CFY10

    Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
    Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    PDF Q62703-F11 fl23SbOS 00b74cà CFY10 fl235fci05 CFY10 siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens