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    MARKING CODE RY 1408 Search Results

    MARKING CODE RY 1408 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE RY 1408 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FTR-K1 SERIES MINIATURE RELAY 2 POLES - 1 to 2A for signal switching RY Series n FEATURES Ultra high sensitivity UL, CSA recognized (see note 2) l Conforms to FCC rules and regulations Part 68 - Surge strength 1,500 V l High dielectric strength type available (RY-WF type)


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    relay miniature 110 vdc

    Abstract: MBB relay LR35579
    Text: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING RY SERIES RoHS Compliant • FEATURES ● ● ● ● ● ● ● ● ● ● Ultra high sensitivity UL, CSA recognized Conforms to FCC rules and regulations Part 68 —Surge strength 1,500 V High dielectric strength type available (RY-WF type)


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    PDF 0438B9 relay miniature 110 vdc MBB relay LR35579

    MBB relay

    Abstract: relay 0,5A 125VAC 2A 30VDC RY 620 RY-5 Transistors marking WZ
    Text: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING RY SERIES RoHS compliant n FEATURES Ultra high sensitivity UL, CSA recognized l Conforms to FCC rules and regulations Part 68 —Surge strength 1,500 V l High dielectric strength type available (RY-WF type)


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    PDF 0438B9 MBB relay relay 0,5A 125VAC 2A 30VDC RY 620 RY-5 Transistors marking WZ

    relay miniature 110 vdc

    Abstract: LR35579 MBB relay
    Text: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING RY SERIES RoHS compliant n FEATURES Ultra high sensitivity UL, CSA recognized l Conforms to FCC rules and regulations Part 68 —Surge strength 1,500 V l High dielectric strength type available (RY-WF type)


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    PDF 0438B9 relay miniature 110 vdc LR35579 MBB relay

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-5E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    PDF DS05-20862-5E 8/256K MBM29LV400TC/BC-55/70/90 48-pin 44-pin 48-ball

    SUPER CHIP

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA


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    PDF DS05-20845-5E 8/512K MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 MBM29LV800TA/BA 48-pin 44-pin 48-ball SUPER CHIP

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-4E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-70/90/12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    PDF DS05-20862-4E 8/256K MBM29LV400TC/BC-70/90/12 48-pin 44-pin 48-ball FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    PDF DS05-20871-4E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball 48-ball MBM29SL800TD/MBM29SL800BD

    FPT-48P-M19

    Abstract: FPT-48P-M20 12PW 38
    Text: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29SL800TD/BD-10/12 MBM29SL800TD/BD DS05-20871-6E F0210 ProductDS05-20871-6E FPT-48P-M19 FPT-48P-M20 12PW 38

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    PDF DS05-20871-5E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball

    MBM29LV800TA-70

    Abstract: MBM29LV800BA-90PFTN
    Text: MBM29LV800TA -70/-90/ MBM29LV800BA -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV800TA -70/- /MBM29LV800BA Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.


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    PDF MBM29LV800TA MBM29LV800BA MBM29LV800TA /MBM29LV800BA MBM29LV800TA/BA DS05-20845-7E MBM29LV800TA-70 MBM29LV800BA-90PFTN

    W49L401

    Abstract: W49L401T
    Text: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP


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    PDF W49L401 12-volt ope798 W49L401T

    tpec

    Abstract: XX555 W49L401 W49L401T
    Text: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP


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    PDF W49L401 12-volt tpec XX555 W49L401T

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on


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    PDF DS05-20870-5E MBM29LV080A-70/90/12 MBM29LV080A 40-pin F0107

    MBM29LV080A

    Abstract: SA10 SA11 SA12 SA13 SA14
    Text: MBM29LV080A-70/90 Data Sheet Retired Product -70/90 MBM29LV080A Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29LV080A-70/90 MBM29LV080A DS05-20870-7E F0107 ProductDS05-20870-7E MBM29LV080A SA10 SA11 SA12 SA13 SA14

    800TD

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.


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    PDF DS05-20871-3E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball MBM29SL800TD/MBM29SL800BD 800TD FPT-48P-M19 FPT-48P-M20

    MBM29LV002BC

    Abstract: MBM29LV002TC
    Text: MBM29LV002TC -70/-90/ MBM29LV002BC -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV002TC Cover Sheet /MBM29LV002BC -70/- This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.


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    PDF MBM29LV002TC MBM29LV002BC MBM29LV002TC /MBM29LV002BC MBM29LV002TC/BC DS05-20863-5E F0303 ProductDS05-20863-5E

    SA11

    Abstract: SA12 SA13 SA14 MBM29LV080A SA10
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-4E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/-90/-12 • FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements


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    PDF DS05-20870-4E MBM29LV080A-70/-90/-12 40-pin MBM29LV080A SA11 SA12 SA13 SA14 MBM29LV080A SA10

    MBM29LV004TC

    Abstract: No abstract text available
    Text: MBM29LV004TC/MBM29LV004BC-70/-90 Data Sheet Retired Product MBM29LV004TC/MBM29LV004BC -70/-90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.


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    PDF MBM29LV004TC/MBM29LV004BC-70/-90 MBM29LV004TC/MBM29LV004BC MBM29LV004TC/BC DS05-20864-8E F0212 ProductDS05-20864-8E MBM29LV004TC

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20864-6E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29LV004TC/MBM29LV004BC-70/-90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    PDF DS05-20864-6E MBM29LV004TC/MBM29LV004BC-70/-90 40-pin F0203

    MBM29LV200BC

    Abstract: MBM29LV200TC
    Text: MBM29LV200TC-70/-90/ MBM29LV200BC -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV200TC Cover Sheet /MBM29LV200BC -70/- This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.


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    PDF MBM29LV200TC-70/-90/ MBM29LV200BC MBM29LV200TC /MBM29LV200BC MBM29LV200TC/BC DS05-20865-6E F0404 ProductDS05-20865-6E MBM29LV200TC

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90/MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words


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    PDF DS05-20883-4E MBM29LV160TE/BE70/90/MBM29LV160TE/BE70/90 MBM29LV160TE/BE 16M-bit, 48-pin 48-ball

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA


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    PDF DS05-20883-4E MBM29LV160TE/BE70/90 MBM29LV160TE/BE 16M-bit, 48-pin 48-ball F0201

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA


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    PDF DS05-20883-2E MBM29LV160TE/BE 16M-bit, 48-pin 48-ball D-63303