B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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Original
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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PDF
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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Original
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface Mount Schottky Diodes Operating Temperature: -65o C to 150°C VF V Max. Part No. Device Marking Code Pd (mW) PIV (V) Min. IR (µA) Max. @ 0.1 mA @ 1.0 mA @ 2.0 mA @ 10 mA @ 15 mA @ 20 mA @ 30 mA @ @ 40/50 100/200 mA mA @ 250 mA TR R (nS) Max. Outline
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Original
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BAT54
BAT54A
BAT54C
BAT54S
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS70
BAS70-04
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PDF
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Untitled
Abstract: No abstract text available
Text: SS34L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020
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Original
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SS34L
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308012
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PDF
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Untitled
Abstract: No abstract text available
Text: SS34L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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Original
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SS34L
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308012
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PDF
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Schottky
Abstract: No abstract text available
Text: SS34L thru SS310L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS34L
SS310L
J-STD-020
2011/65/EU
2002/96/EC
D1405056
Schottky
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PDF
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SS34L
Abstract: subsma MARKING CODE A13
Text: Preliminary SS34L creat by art 3.0AMPS Surface Mount Schottky Barrier Rectifiers Sub SMA Features For surface mounted application Low-Profile Package Idea for automated pick & place High current capability, low VF High surge current capability
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Original
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J-STD-020D,
IEC61000-4-2
260/10s
SS34L
subsma
MARKING CODE A13
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 thru SS320 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020
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Original
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SS320
J-STD-020
2011/65/EU
2002/96/EC
DO-214AB
AEC-Q101
JESD22-B
D1307006
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 - SS320 3.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features For surface mounted application Easy pick and place Metal to sillicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF
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Original
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SS320
SMC/DO-214AB
J-STD-020D,
DO-214AB
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 thru SS320 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS320
J-STD-020
2011/65/EU
2002/96/EC
DO-214AB
AEC-Q101
JESD22-B102
D1307006
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 - SS320 creat by art 3.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features For surface mounted application Easy pick and place Metal to sillicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF
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Original
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SS320
SMC/DO-214AB
J-STD-020D,
DO-214AB
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 - SS320 creat by art 3.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features For surface mounted application Easy pick and place Metal to sillicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF
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Original
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SS320
SMC/DO-214AB
J-STD-020D,
DO-214AB
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 thru SS320 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS320
J-STD-020
2011/65/EU
2002/96/EC
DO-214AB
AEC-Q101
JESD22-B102
D1307006
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PDF
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Untitled
Abstract: No abstract text available
Text: Quartz Quartz Crystal Crystal • SS3 • JXE 63 Pin Type Crystal · 11.35 x 4.65 mm RoHS • recommended for automotive applications ■ wave soldering temperature: 260 °C max. ■ package height 3.6 mm max. actual size General Data 2002/95/EC RoHS compliant
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Original
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2002/95/EC
HC49/U3H)
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PDF
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Quartz Crystals
Abstract: automotive quartz crystals crystals Marking Code ss3 Crystal 32 MHz 12 pF JAUCH Quartz Crystals 16 Mhz
Text: Quartz Crystal • SS3 Pin Type Crystal · 11.35 x 4.65 mm RoHS • recommended for automotive applications ■ wave soldering temperature: 260 °C max. ■ package height 3.6 mm max. actual size General Data 2002/95/EC RoHS compliant Dimensions SS3 3.27680 ~ 33.0 MHz
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Original
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2002/95/EC
Quartz Crystals
automotive quartz crystals
crystals
Marking Code ss3
Crystal 32 MHz 12 pF
JAUCH Quartz Crystals 16 Mhz
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PDF
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SS320
Abstract: ss315 SS32 SS32-SS34
Text: SS32 - SS320 creat by art 3.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 For surface mounted application Easy pick and place Metal to sillicon rectifier, majority carrier conduction
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Original
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SS320
SMC/DO-214AB
E-326243
DO-214AB
SS39-SS310
SS32-SS34
SS35-SS320
300uS
SS35-SS36
SS320
ss315
SS32
SS32-SS34
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PDF
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Untitled
Abstract: No abstract text available
Text: SS32 - SS320 creat by art 3.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Pb RoHS COMPLIANCE Features For surface mounted application Easy pick and place Metal to sillicon rectifier, majority carrier conduction Low power loss, high efficiency
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Original
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SS320
SMC/DO-214AB
DO-214AB
RS-481
SS32-SS34
SS315-SS320
SS39-SS310
300uS
SS32-SS34
SS35-SS320
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PDF
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JESD22-B102
Abstract: J-STD-002
Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020,
O-277A
2002/95/EC
2002/96/EC
JESD22-B102
J-STD-002
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PDF
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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OCR Scan
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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PDF
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BFS55A
Abstract: Bfs 60 60dBi transistor b54
Text: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454
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OCR Scan
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Q62702-F454
0Db7431
EHT08056
EHT03057
235fc
BFS55A
Bfs 60
60dBi
transistor b54
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFQ 75 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. • Complementary type: BFQ 72 NPN . ESD. Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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Q62702-F803
023SbDS
DDb717fl
BFQ75
fl23Sb05
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PDF
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la 7680
Abstract: t930 ERC04 T151 IR-o41 Scans-0091120 marking A9 marking 1ba
Text: ERC04 F ( i .5A) : Outline Drawings GENERAL USE RECTIFIER DIO DE Features • 'JV£ . M : • S U M C om pact size, light w e ig h t : Marking High reliability - : Applications A 7 3 - K : ffi Color code : Orange I •«SS3K Abridged type name General purpose rectifier applications
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OCR Scan
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ERC04
I95t/R89)
la 7680
t930
T151
IR-o41
Scans-0091120
marking A9
marking 1ba
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PDF
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Marking Code ss3
Abstract: TWO 2SA1037K marking t109 marking code va transistors Transistors mark UMx1 2SC2412KX2 pre amp 2SA1037KX2
Text: TTTTHJ T r a n s is t o r s < S u r f a c e M ounted T v p e s > ROHM CO LTD SbE D • TflEfl'm 000b'}7tl SS3 ■ R H U [6 pin type including independent 2 circuits] Two transistors are contained in 2125 and 2916 type packages. The two circuits are independent of each other.
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OCR Scan
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2SA1037KX2
2SA1037K
Marking Code ss3
TWO 2SA1037K
marking t109
marking code va transistors
Transistors mark
UMx1
2SC2412KX2
pre amp
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PDF
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Untitled
Abstract: No abstract text available
Text: BFN 17 BFN 19 PNP Silicon High-Voltage Transistors 35E D • SS3b350 DGlbfiH? 4 « S I P SIEMENS/ SPCLi SEMICONDS • • • • Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emltter saturation voltage
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OCR Scan
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SS3b350
Q62702-F695
Q62702-F697
Q62702-F884
Q62702-F1057
A23b32Q
BFN17
T-31-23
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PDF
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