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    MARKING CODE UJ GENERAL SEMICONDUCTOR Search Results

    MARKING CODE UJ GENERAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE UJ GENERAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC GENERAL SEMICONDUCTOR MARKING UJ SMA us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 03-Jul-06 GENERAL SEMICONDUCTOR MARKING UJ SMA US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08

    Untitled

    Abstract: No abstract text available
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


    Original     		PDF DO-214AC 50mVp-p 02-Jul-02

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


    Original     		PDF DO-214AC 50mVp-p 20-Mar-03 GENERAL SEMICONDUCTOR MARKING UJ SMA GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 50mVp-p 18-Feb-04 GENERAL SEMICONDUCTOR MARKING uj sma GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: JESD22-B102D J-STD-002B
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 08-Apr-05 GENERAL SEMICONDUCTOR MARKING uj sma JESD22-B102D J-STD-002B

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: RECTIFIER marking UG 08 us1d US1A
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •


    Original     		PDF DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 50mVp-p 05-Aug-05 GENERAL SEMICONDUCTOR MARKING UJ SMA RECTIFIER marking UG 08 us1d US1A

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    6 PIN TRANSISTORS 58A

    Abstract: power mosfet 600v 29a STK58X60LM
    Text: STK58X60LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Ordering Information Type NO.


    Original     		PDF STK58X60LM STK58X60 KSD-T0H016-000 6 PIN TRANSISTORS 58A power mosfet 600v 29a STK58X60LM

    STK0260

    Abstract: No abstract text available
    Text: STK0260LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Ordering Information Type NO.


    Original     		PDF STK0260LM STK0260LM STK0260 KSD-T0H020-000

    Untitled

    Abstract: No abstract text available
    Text: STK38X60LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) :RDS(on)=9.4Ω(Max.) Ordering Information Type NO.


    Original     		PDF STK38X60LM STK38x60 KSD-T0H011-000

    US1A

    Abstract: No abstract text available
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 US1A

    Untitled

    Abstract: No abstract text available
    Text: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose


    OCR Scan     		PDF CMPT2907A CMPT2907A OT-23

    transistor 1kp

    Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor
    Text: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS


    OCR Scan     		PDF BCV61 OT143B BCV62. BCV61 BCV61A BCV61B BCV61C transistor 1kp transistor 406 specification marking code 1kp 1Lp marking TRANSISTOR 404 LC marking code transistor

    SOT323 Marking LE

    Abstract: T31G
    Text: Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3


    OCR Scan     		PDF OT323; 2PD1820A. 2PB1219A 2PB1219AQ 2PB1219AR 2PB1219AS MAM048 powe19AS SOT323 Marking LE T31G

    marking code H.5 Sot 23-5

    Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
    Text: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature


    OCR Scan     		PDF TC4730A) 100mA: OT-23-5 100mA marking code H.5 Sot 23-5 Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47

    sot89 marking 93

    Abstract: MARKING 93 SOT89 sot89 93 marking code EF
    Text: Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES PINNING • Hign current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 emitter • High DC current gain (min. 20000). 2 collector 3 base APPLICATIONS


    OCR Scan     		PDF BCV29; BCV49 BCV28 BCV48. BCV29 BCV49 sot89 marking 93 MARKING 93 SOT89 sot89 93 marking code EF

    GENERAL SEMICONDUCTOR MARKING RJ

    Abstract: DO-214AC marking Rj
    Text: RS1ATHRU RS1J SURFACE MOUNT FAST SWITCHING RECTIFIER Reverse Voltage 50 to 600 Volts - DO-214AC MODIFIED J-BEND Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications in order to optimize


    OCR Scan     		PDF DO-214AC MIL-STD-750, GENERAL SEMICONDUCTOR MARKING RJ DO-214AC marking Rj

    L110C

    Abstract: marking DOE US1B General marking CODE UJ General Semiconductor
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT _ US1ATHRU US1J_ SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere _ FEATURES_ DO-214AC ♦ Plastic package has Underwriters Laboratory


    OCR Scan     		PDF DO-214AC DO-214AC L110C marking DOE US1B General marking CODE UJ General Semiconductor

    e 1220 diode

    Abstract: TC1219
    Text: W Semiconductor, Inc. TC 1219 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage


    OCR Scan     		PDF TC1220 OT-23A-6 TC1219/1220 TC1219 TC1220. e 1220 diode

    15w cfl

    Abstract: U835 TS 11178 18BSC TS1117B TS1117BCZXXC0 voltage regulator sot 223 marking b07
    Text: E TS1117B T A IW A N SEMICONDUCTOR 800mA Low Dropout Positive Voltage Regulator pb RoHS CO M PLIANCE T O -252 SO T-223 TO-22Û 2 SO P-8 P in D e fin itio n : 1. F ixed / Adj 1. F ixed/A dj 3. N/C 2. O u tp u t (tab) V 2. O utput 3. O utput 4 . Input 7. O utput


    OCR Scan     		PDF TS1117B O-252 OT-223 O-220 TS1117B 15w cfl U835 TS 11178 18BSC TS1117BCZXXC0 voltage regulator sot 223 marking b07

    Untitled

    Abstract: No abstract text available
    Text: central" Semiconductor Corp. C M P T2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    OCR Scan     		PDF T2222A CMPT2222A OT-23 150mA' 150mA,

    Untitled

    Abstract: No abstract text available
    Text: Central" CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. ENH ANCED SPEC IFIC A T IO N COMPLEMENTARY PICOmini SILICON TRANSISTORS ENHANCED DESCRIPTION: The Central Semiconductor CMLT3904E two sin­ gle NPN , CMLT3906E (two single PNP), and


    OCR Scan     		PDF CMLT3904E CMLT3906E CMLT3946E CMLT3904E CMLT3906E CMLT3946E OT-563 CMLT3904E: CMLT3906E:

    capacitor Y5S 022

    Abstract: cm z5u 0.033 m 3kv ceramic disc .01 1kv z5u cera-mite z5u 1kv z5u capacitor sprague cm z5u 6kv cera-mite z5u 3kv y5s 0022 CERA-MITE Y5V 2KV 10TCCT18
    Text: f i - O S -0 5 - 0 1 A COMPANY CERAMIC DISC CAPACITORS Introduction OF SPRflGUE Cera-mite , 1.0 Picofarad to 0.1 M icrofarad CERAMIC DISC CAPACITORS Reliable solutions in EMI/RFI, decoupling, dv/dt and di/dt, snubbers, by-pass, ESR and ESL. Excellent for power supplies: Switcher and high voltage.


    OCR Scan     		PDF DD21bSfl capacitor Y5S 022 cm z5u 0.033 m 3kv ceramic disc .01 1kv z5u cera-mite z5u 1kv z5u capacitor sprague cm z5u 6kv cera-mite z5u 3kv y5s 0022 CERA-MITE Y5V 2KV 10TCCT18