C6320
Abstract: 620 tg diode
Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps
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TC6320
MS-012,
DSFP-TC6320
B051908
C6320
620 tg diode
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C6320
Abstract: No abstract text available
Text: TC6320 N- and P-Channel, Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps
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TC6320
MS-012,
DSFP-TC6320
A030608
C6320
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Untitled
Abstract: No abstract text available
Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Lead-free Green UNDER DEVELOPMENT Features • · · · · · · · · Low On-Resistance Very Low Gate Threshold Voltage Fast Switching Speed DFN1006-3 Low Input/Output Leakage
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DMN2005LP4K
DFN1006-3
DFN1006-3
DS30799
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Untitled
Abstract: No abstract text available
Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps
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TC6320
DSFP-TC6320
C103008
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c6320
Abstract: MD12xx TC6320 TC6320K6 p channel mosfet 100v 125OC TC6320TG-G 090M TC6320K6-G DFN 3x4
Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps
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TC6320
TC6320
DSFP-TC6320
C122208
c6320
MD12xx
TC6320K6
p channel mosfet 100v
125OC
TC6320TG-G
090M
TC6320K6-G
DFN 3x4
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marking code DN diode
Abstract: No abstract text available
Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package
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DMN2005LP4K
AEC-Q101
DFN1006H4-3
J-STD-020
MIL-STD-202,
DS30799
marking code DN diode
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STTS2002
Abstract: Part Marking STMicroelectronics TSSOP8 stmicroelectronics traceability M34E02 MO-229 STTS424E02 N3251
Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kbit Serial Presence Detect SPD EEPROM TDFN8 (DN)(a) 2 mm x 3 mm (max height 0.80 mm)
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STTS424E02
STTS424E02
STTS2002
Part Marking STMicroelectronics TSSOP8
stmicroelectronics traceability
M34E02
MO-229
N3251
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M34E02
Abstract: MO-229 STTS424E02
Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kbit serial presence detect SPD EEPROM TDFN8 (DN)(a) 2 mm x 3 mm (max height 0.80 mm)
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STTS424E02
STTS424E02
M34E02
MO-229
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M34E02
Abstract: MO-229 STTS2002 STTS424E02 tdfn-8l
Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Not recommended for new design Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kb serial presence detect SPD EEPROM (STTS2002 is
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STTS424E02
STTS424E02
STTS2002
M34E02
MO-229
tdfn-8l
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Untitled
Abstract: No abstract text available
Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Not recommended for new design Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kb serial presence detect SPD EEPROM (STTS2002 is
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STTS424E02
STTS424E02
STTS2002
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1E74H
Abstract: JC42 MO-229 STTS424 tdfn-8l
Text: STTS424 Memory module temperature sensor Features • Temperature sensor compliant with JEDEC JC42.4 Temperature sensor ■ Temperature sensor resolution: 0.25°C typ /LSB ■ Temperature sensor accuracy: – ± 1°C from +75°C to +95°C – ± 2°C from +40°C to +125°C
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STTS424
1E74H
JC42
MO-229
STTS424
tdfn-8l
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Untitled
Abstract: No abstract text available
Text: STTS424 Memory module temperature sensor Features • Temperature sensor compliant with JEDEC JC42.4 Temperature sensor ■ Temperature sensor resolution: 0.25°C typ /LSB ■ Temperature sensor accuracy: – ± 1°C from +75°C to +95°C – ± 2°C from +40°C to +125°C
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STTS424
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DFN1006H4-3
Abstract: DMN2005LP4K marking code DN diode
Text: SPICE MODEL: DMN2005LP4K DMN2005LP4K NEW NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage
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DMN2005LP4K
DFN1006H4-3
DS30799
DFN1006H4-3
DMN2005LP4K
marking code DN diode
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M34E02
Abstract: No abstract text available
Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Not recommended for new design Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kb serial presence detect SPD EEPROM (STTS2002 is
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STTS424E02
STTS424E02
STTS2002
M34E02
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DFN1006-3
Abstract: DMN2005LP4K DFN1006H4-3
Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package
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DMN2005LP4K
AEC-Q101
DFN1006H4-3
J-STD-020C
MIL-STD-202,
DS30799
DFN1006-3
DMN2005LP4K
DFN1006H4-3
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Untitled
Abstract: No abstract text available
Text: STTS424 Memory module temperature sensor Features • Temperature sensor compliant with JEDEC JC42.4 s ct Temperature sensor ■ Temperature sensor resolution: 0.25°C (typ)/LSB ■ Temperature sensor accuracy: – ± 1°C from +75°C to +95°C – ± 2°C from +40°C to +125°C
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STTS424
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DFN1006H4-3
Abstract: DMN2005LP4K J-STD-020D marking CODE 001
Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.
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DMN2005LP4K
AEC-Q101
DFN1006H4-3
J-STD-020D
DS30799
DFN1006H4-3
DMN2005LP4K
J-STD-020D
marking CODE 001
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Untitled
Abstract: No abstract text available
Text: LT3487 Boost and Inverting Switching Regulator for CCD Bias DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3487 dual channel switching regulator generates positive and negative outputs for biasing CCD imagers. The device delivers up to –8V at 90mA and 15V at 45mA
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LT3487
LT3471
LT3472/LT3472A
350mA/400mA
3487f
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sumida hp lcd inverter pin diagram
Abstract: capacitor start capacitor run 1 HP SINGLE PHASE LBXB sumida lcd inverter pin diagram 100nf chip cap A997AS-100M ceramic capacitor, 20pF EMK212BJ225MD ipos 150 g14 DIODE schottky marking
Text: LT3487 Boost and Inverting Switching Regulator for CCD Bias DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3487 dual channel switching regulator generates positive and negative outputs for biasing CCD imagers. The device delivers up to –8V at 90mA and 15V at 45mA
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LT3487
LT3471
LT3472/LT3472A
350mA/400mA
3487f
sumida hp lcd inverter pin diagram
capacitor start capacitor run 1 HP SINGLE PHASE
LBXB
sumida lcd inverter pin diagram
100nf chip cap
A997AS-100M
ceramic capacitor, 20pF
EMK212BJ225MD
ipos 150
g14 DIODE schottky marking
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Untitled
Abstract: No abstract text available
Text: LT3472 Boost and Inverting DC/DC Converter for CCD Bias DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ Generates 15V at 20mA, –8V at 50mA from a Li-Ion Cell Internal Schottky Diodes VIN Range: 2.2V to 16V Output Voltages Up to ±34V Capacitor-Programmable Soft-Start
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LT3472
10-Lead
LT3464
LT3467/LT3467A
3472f
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D1067
Abstract: LT3472EDD F02A LT3462 LT19441 marking FBN LT3472 LT1615-1 LQH2MCN470 lbgc
Text: LT3472 Boost and Inverting DC/DC Converter for CCD Bias DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Generates 15V at 20mA, –8V at 50mA from a Li-Ion Cell Internal Schottky Diodes VIN Range: 2.2V to 16V Output Voltages Up to ±34V Capacitor-Programmable Soft-Start
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LT3472
10-Lead
LT3464
LT3467/LT3467A
3472f
D1067
LT3472EDD
F02A
LT3462
LT19441
marking FBN
LT3472
LT1615-1
LQH2MCN470
lbgc
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CPC6 coating
Abstract: corning smf cable EIA-359-A MARKING E0C DFNR
Text: THIS DRAWING IS UNPUBUSHED. @ RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. DIST REVISIONS EH LTR D 1 \ □PTICAL FIBER SPECIFICATIONS: PART NUMBER FIBER TYPE 503016-1 62. 5 / 1 2 5 503016-2 50/125 503016-3 100/140
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OCR Scan
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PDF
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850nm
1300nm
1550nm
850nm
1300nn
SMF-28
m-160/300
100/14Q/j
m-100/lQQ
CPC6 coating
corning smf cable
EIA-359-A
MARKING E0C
DFNR
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EIA-359-A
Abstract: EIA-359
Text: THIS DRAWING IS UNPUBUSHED. @ RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. DIST REVISIONS EH LTR D A H □PTICAL FIBER SPECIFICATIONS! ATTEN UAT I□IsJ PART NUMBER FIBER TYPE D / A t 502987-1 62. 5/125 502987-2 50/125
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0A60-0075-97
0A60-0112-99
27SEP96
24SEP97
16AUG99
850nm
1300nri
1550nm
850nm
1300nm
EIA-359-A
EIA-359
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GR-409-CDRE
Abstract: SMD-KE EIA-359 dash
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 DPTICAL FIBER SPECIFICATIONS FIBER TYPE 503015-2 50/125 503015-5 62. 5 / 1 2 5 503015-6 SINGLEMDDE S M F -2 8 503015-8 62. 5 / 1 2 5 2. 9 0. 9 n/a MAXIMUM 2. 0 n/a TYPICAL 2. 6 1. 1 n/a
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850nm
1300nm
1550nm
850nn
SMF-28
5/125/um
50/125/xn
5/125/i
GR-409-CDRE
SMD-KE
EIA-359
dash
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