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    MARKING F3 SOT23 Search Results

    MARKING F3 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING F3 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KDS193

    Abstract: marking F3 sot23
    Text: SEMICONDUCTOR KDS193 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 F3 1 2 Item Marking Description Device Mark F3 KDS193 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KDS193 OT-23 KDS193 marking F3 sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time 1 MARKING: F3 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit VRM 85 V


    Original     		PDF OT-23 OT-23 1SS193

    1SS193

    Abstract: No abstract text available
    Text: 1SS193 Switching Diodes SOT-23 1. ANODE 2. N.C. 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits


    Original     		PDF 1SS193 OT-23 100mA 1SS193

    f3 diode sot23

    Abstract: marking code F3 diode MARKING F3 marking f3 sot-23
    Text: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM


    Original     		PDF MMBD193 OT-23 100mA f3 diode sot23 marking code F3 diode MARKING F3 marking f3 sot-23

    marking code F3

    Abstract: diode MARKING F3
    Text: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM


    Original     		PDF MMBD193 OT-23 100mA marking code F3 diode MARKING F3

    ISS193

    Abstract: ISS193 F3 marking f3 sot-23 1SS193
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. ANODE MARKING: F3 2. N.C. 3. CATHODE Maximum Ratings @TA=25℃


    Original     		PDF OT-23 1SS193 OT-23 100mA ISS193 ISS193 ISS193 F3 marking f3 sot-23 1SS193

    F5 MARK

    Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
    Text: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF KST1009F1/F2/F3/F4/F5 OT-23 F5 MARK marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		PDF 2N2894AC1 -200mA 360mW 88mW/Â 2N2894AC1B

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		PDF 2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â 2N4209C1B

    2N2894AC1

    Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
    Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		PDF 2N2894AC1 -200mA 360mW 2N2894AC1B 2N2894AC1 LE17 MIL-PRF19500 QR217 marking l3d sot23

    MMSZ5243

    Abstract: N4 SOT23
    Text: 500mW ZENER DIODES MMSZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.


    Original     		PDF 500mW MMSZ52 MMSZ5225 MMSZ5226 MMSZ5227 MMSZ5228 MMSZ5229 MMSZ5230 MMSZ5231 MMSZ5232 MMSZ5243 N4 SOT23

    Untitled

    Abstract: No abstract text available
    Text: 1SS193 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High Conductance   Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original     		PDF 1SS193 OT-23, MIL-STD-202,

    BFR92A

    Abstract: bfr92
    Text: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available


    Original     		PDF BFR92, BFR92A 250mW BFR92AC1B-JQRS BFR92A bfr92

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		PDF 2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â

    CV 203

    Abstract: marking code C9 F3 SOT23-3
    Text: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1430 OT23-3) KV1430 OT2375 IC-xxx-KV1471E 0798O0 CV 203 marking code C9 F3 SOT23-3

    BS850

    Abstract: BSS84 DS11402 SOT23 marking GF
    Text: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED,


    Original     		PDF BS850 BSS84 OT-23, MIL-STD-202 OT-23 DS11402 BS850 BSS84 SOT23 marking GF

    Untitled

    Abstract: No abstract text available
    Text: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR DISCONTINUED, FOR NEW DESIGN USE BSS84 Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited


    Original     		PDF BS850 BSS84 OT-23 OT-23, MIL-STD-202 BSS84 DS11402

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1009F1/F2/F3/F4/F5 OT-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5

    marking F3 sot-23

    Abstract: Marking f3 diode MARKING F3 1SS193 SMD marking F3
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)


    Original     		PDF 1SS193 OT-23 marking F3 sot-23 Marking f3 diode MARKING F3 1SS193 SMD marking F3

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05


    Original     		PDF 1SS193 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)


    OCR Scan     		PDF 0Q11524 OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 O-92S

    KSC3488

    Abstract: KSC853 KSA953 KSC815
    Text: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )


    OCR Scan     		PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 BCW31 O-92S KSC3488 KSC853 KSA953 KSC815

    KSC815

    Abstract: No abstract text available
    Text: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN


    OCR Scan     		PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 BCW31 O-92S KSA1150 KSA1378 KSC815

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST1009F1/F2/F3/F4/F5 OT-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5