c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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MIL-DTL-38999
Abstract: MIL-C-87936 JMS 27473 T F423 RE 27508-E JTG06 900245-91 Isopropyl Alcohol TT-I-735 grade A or B JTPQ AMPHENOL MARKING MM
Text: JT - E111/A 8/01/02 12:22 Page 2 JT Main features • Shell material - Aluminium alloy - Carbon steel for hermetic versions • Finish - Olive drab cadmium plating - Electroless nickel plating - Others (please consult us) DESCRIPTION GENERAL CHARACTERISTICS
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MIL-DTL-38999
MIL-C-87936
JMS 27473 T
F423
RE 27508-E
JTG06
900245-91
Isopropyl Alcohol TT-I-735 grade A or B
JTPQ AMPHENOL
MARKING MM
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transistor f422 equivalent
Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
Text: GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES 247 3 INTRODUCTION The SGS-THOMSON Graphics data book contains comprehensive data on three
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NEC 2561
Abstract: transistor f422 transistor f423 nec 2561 equivalent transistor f422 equivalent transistor NEC D 882 p verilog code for 8254 timer TBA 931 nec d 882 p datasheet nec 2561 datasheet
Text: CB-C7, 3-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. Preliminary October 1993 Description Figure 1. Integrated HDD Solution with CB-C7 Cell-Based ASIC and Embedded Megafunctions The CB-C7, 3-volt cell-based product family is intended for low power portables and battery-operated products. A
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220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
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P390-ND
P465-ND
P466-ND
P467-ND
LNG901CF9
LNG992CFBW
LNG901CFBW
LNG91LCFBW
220v AC voltage stabilizer schematic diagram
BA 49182
RJh 3047
rjh 3047 equivalent
a1458 opto
philips ecg master replacement guide
MOSFET, rjh 3077
sc1097
philips ecg semiconductors master replacement guide
Electronic ballast 40W using 13005 transistor
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nec 2561 equivalent
Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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22an
Abstract: No abstract text available
Text: 8-13-99 From: DocuFACTSttm] Ph# 949-253-7438 16038801932 Pomona* 10:21an p. 4 of 7 Model 4233 & 5524 Do-It-Yourself Micrograbber & Test Clip Kits - .06 1.52 080 ( 2 .03 ) VIEW A A C TU A T E D FEATURES: • Ideal for connecting to small circuit board components.
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QQ-C-533,
MEL-G-45204,
22an
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F422
Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
Text: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input
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b427525
uPD65000
The//PD65000
T-42-11-09
//PD65000
//PD65003
juPD65002
fiPD65010
juPD65020
F422
transistor f422
PD65010
F922
F962
F715
F981 IC
pd65000
F746
F744
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f422
Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip
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uPD65000
//PD65003
juPD65002
fiPD65010
juPD65020
16-Pin
18-Pin
20-Pin
24-Pin
28-Pin
f422
transistor f422
F981 IC
F421
4-bit even parity using mux 8-1
transistor f421
transistor f423
4-bit odd parity using mux 8-1
F423
PD65003
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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thomson CRT COLOUR TV SCHEMATIC DIAGRAM
Abstract: z80 ef9345 SS 1091 asn EF9367 transistor f422 equivalent marking codes transistors SSs processor 8035 practical circuits TDA 9345 EF9345FN EF7910
Text: GRAPHIC PROCESSORS DATABOOK 1st EDITION GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES
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F483
Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Text: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the
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16k-bit
64k-bit
IP-8001
F483
f422
b0w4
NEC VOLTAGE COMPARATOR IC LIST
F-637
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CMOS-6A
Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC
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IP-8090
CMOS-6A
F223
65630
F304
f422
F501 MOS
l442
bt08
700201
L421 Marking
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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IEU-7922,
IP-8090
ru4f
F422
F423
rj8b
"Single-Port RAM"
TT 2246
RU89
BE09
L737
f425
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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IEU-7922,
IP-8090
65630
RK4B
83nr-7843b
ru4f
RJ49
RJ4B
NEC uPD 65658
transistor f423
F423
L442
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8251a usart interface from z80
Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn
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L4E75BS
80C42H
D043fl23
8251a usart interface from z80
UDL TM 500
f922
verilog code for 8254 timer
l912
256x32
POWER MODULE TM 31
udl 500
78K3
F5S4
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D65806
Abstract: 9215K1
Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-MICRON
xPD65800
D65806
9215K1
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jPD65800
D65842
diode ru4d
136-Pin
CMOS7
BV09
180 nm CMOS standard cell library Synopsys
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D65806
Abstract: No abstract text available
Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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65-micron
D65806
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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