Untitled
Abstract: No abstract text available
Text: DLPA200 www.ti.com DLPS015B – APRIL 2010 – REVISED AUGUST 2012 DLP DLPA200 DMD Micromirror Driver Check for Samples: DLPA200 FEATURES 1 • • • • • APPLICATIONS • • • Industrial: – Direct Imaging Lithography – Laser Marking and Repair Systems
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DLPA200
DLPS015B
DLPA200
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dlp dmd chip xga
Abstract: dlp dmd chip DAD2000
Text: DLPA200 www.ti.com DLPS015C – APRIL 2010 – REVISED SEPTEMBER 2013 DLP DLPA200 DMD Micromirror Driver Check for Samples: DLPA200 FEATURES 1 • • • • • APPLICATIONS • • • Industrial: – Direct Imaging Lithography – Laser Marking and Repair Systems
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DLPA200
DLPS015C
DLPA200
80-pin,
dlp dmd chip xga
dlp dmd chip
DAD2000
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dad2000
Abstract: dlp dmd chip xga
Text: DLPA200 www.ti.com DLPS015C – APRIL 2010 – REVISED SEPTEMBER 2013 DLP DLPA200 DMD Micromirror Driver Check for Samples: DLPA200 FEATURES 1 • • • • • APPLICATIONS • • • Industrial: – Direct Imaging Lithography – Laser Marking and Repair Systems
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DLPA200
DLPS015C
DLPA200
dad2000
dlp dmd chip xga
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dad2000
Abstract: dlp dad2000 MARKING 3D regulator
Text: DLPA200 www.ti.com DLPS015C – APRIL 2010 – REVISED SEPTEMBER 2013 DLP DLPA200 DMD Micromirror Driver Check for Samples: DLPA200 FEATURES 1 • • • • • APPLICATIONS • • • Industrial: – Direct Imaging Lithography – Laser Marking and Repair Systems
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DLPA200
DLPS015C
DLPA200
dad2000
dlp dad2000
MARKING 3D regulator
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FGRM-S51-24-LED
Abstract: FGRM-S31-24-LED P7SA-14P G7SA-4A2B G7SA-3A1B G7SA-5A1B H3 OMRON P7SA-10F-ND G7SA-2A2B P7SA-14F
Text: force-guided relays g7SA G7SA Rev. 9.09 compact, Slim relays conforming to en Standards • Relays with forcibly guided contacts EN50205 Class A, certifi ed by VDE • Supports the CE marking of machinery (Machinery Directive) • Helps avoid hazardous machine status when used as part of an
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EN50205ClassA,
24VDC
FGRM-S31-24-LED
FGRM-S33-24-LED
FGRM-S42-24-LED
FGRM-S51-24-LED
FGRM-S51-24
FGRM-S51-24-LED
FGRM-S31-24-LED
P7SA-14P
G7SA-4A2B
G7SA-3A1B
G7SA-5A1B
H3 OMRON
P7SA-10F-ND
G7SA-2A2B
P7SA-14F
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FGR15N40A
Abstract: 15N40A OC73
Text: FGR15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC =150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGR15N40A
200et
FGR15N40A
15N40A
OC73
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FGR15N40
Abstract: No abstract text available
Text: FGR15N40 Strobe Flash N-Channel Logic Level IGBT General Description Applications This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have been designed to offer exceptional power
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FGR15N40
FGR15N40
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Untitled
Abstract: No abstract text available
Text: FGR15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGR15N40
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south bridge SIS 968
Abstract: S6 marking code onsemi Diode SI3018-F-FS marking code 7N1 Si2457 Si3018 Si2404 Si2415 Si2434 SI2434-D-GT
Text: Si2457/34/15/04 V.90, V.34, V. 32 B IS , V.22 B IS I SO MO DE M WITH G L O B A L DAA Features This data sheet applies to Si2457/34/ Integrated DAA 15/04 Revision D Over 6000 V capacitive isolation Data modem formats Parallel phone detect
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Si2457/34/15/04
Si2457/34/
42bis,
south bridge SIS 968
S6 marking code onsemi Diode
SI3018-F-FS
marking code 7N1
Si2457
Si3018
Si2404
Si2415
Si2434
SI2434-D-GT
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE CONNECTORS FOR SPECIAL APPLICATIONS ® 05 Series 5G Series ® REDEL Kft ® K and S Series No reproduction or use without express permission of editorial or pictorial content, in any manner. LEMO reserve the right at all times to modify and improve specifications without any notification.
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Untitled
Abstract: No abstract text available
Text: June 2013 Passive components sales offices ● Head office Philippines Plant Philippines Block No.5, Calamba Premiere International Park, Batino, Calamba, Laguna, Manila, Philippines 4027 Te l:+63 - 49- 545- 0422 E-mail:donna@samsung.com 206, Cheomdansaneop Road,
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QC080000
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Untitled
Abstract: No abstract text available
Text: November 2010 THICK - FILM CHIP RESISTOR We, Samsung, declare that our component Chip Resistor is produced in accordance with EU RoHS directive. 1. RoHS Compliance and restriction of Br The following restricted materials are not used in packaging materials as well as products in compliance with the law and restriction.
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Untitled
Abstract: No abstract text available
Text: March 2006 THICK - FILM CHIP RESISTOR Head Office Asia sales office America sales office 314, Maetan 3-dong, Youngtong-gu, Suwon, Kyonggi Province 442 - 743, Korea Shanghai Office 200336Rm 1408 Shanghai international trade center No 2201 Yan an W RD Shanghai PRC
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200336Rm
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0,47F, 5,5v, FYD
Abstract: tokin fyh 5.5v tokin 473 5.5v FR tokin 0,047F 5.5v FYD .047F FG0H473Z FG 5.5V 0.47F tokin 0.47f 5.5v TRANSISTOR SMD MARKING CODE 702 5.5v 0.047f
Text: FOR CORRECT USE OF SUPER CAPACITORS 1. Please confirm the operating conditions and the specifications of the Super Capacitors befor using them. 2. The electrolyte of these Super Caapacitors is sealed with material such as rubber. When you use the capacitors for a long time at high temperature, the moisture of
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Untitled
Abstract: No abstract text available
Text: P30L Vishay Sfernice Long Life Potentiometer - 1 Million Cycles Heavy Duty - Cermet Fully Sealed FEATURES • 1 million cycles RoHS • High power rating 2 W at 70 °C COMPLIANT • Low temperature coefficient (± 150 ppm/°C typical) • Custom designs on request
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P30LME:
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: P30L Vishay Sfernice Long Life Potentiometer - 2 Million Cycles Heavy Duty - Cermet Fully Sealed FEATURES • 2 million cycles High power rating 3 W at 70 °C Cermet element Low temperature coefficient ± 150 ppm/°C typical Custom designs on request
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2002/95/EC
P30LL
P30LLL:
18-Jul-08
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B 103 potentiometer
Abstract: B 103 Potentiometers SFERNICE potentiometer Sfernice BO10
Text: P30L Vishay Sfernice Long Life Potentiometer - 2 Million Cycles Heavy Duty - Cermet Fully Sealed FEATURES • 2 million cycles • High power rating 3 W at 70 °C • Low temperature coefficient (± 150 ppm/°C typical) • Custom designs on request • Compliant to RoHS directive 2002/95/EC
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2002/95/EC
18-Jul-08
B 103 potentiometer
B 103 Potentiometers SFERNICE
potentiometer Sfernice
BO10
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Untitled
Abstract: No abstract text available
Text: P30L Vishay Sfernice Long Life Potentiometer - 2 Million Cycles Heavy Duty - Cermet Fully Sealed FEATURES • 2 million cycles High power rating 3 W at 70 °C Cermet element Low temperature coefficient ± 150 ppm/°C typical Custom designs on request
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2002/95/EC
P30LL
P30LLL:
11-Mar-11
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SAE-AS31971
Abstract: B197 EIA-364-27 EIA-364-32 EIA-364-6 EIA-364-31
Text: Specifications 'F" Series. 100” <£ .,N sN i L ftc f/l Material and Finish Molded Insulator: 40% Glass Filled Polyphenylene Sulfide, Per MIL-DTL-55302 Pin Contacts: Copper Alloy per MIL-D TL-55302. Socket Contacts: Contacts: Terminal: Be Cu per MIL-DTL-55302.
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MIL-DTL-55302
TL-55302.
MIL-DTL-55302.
ASTM-A581
SAE-AMS-2700
perASTM-B196
SAE-AMS-QQ-N-290
SAE-AS31971
B197
EIA-364-27
EIA-364-32
EIA-364-6
EIA-364-31
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MIL-DTL-55302
Abstract: No abstract text available
Text: 100 SERIES 2 ROW STRAIGHT RECEPTACLE INCON P/N F B R 5 4 11 - 20 00 924 Variation Solder dipped terminations Sealback terminations Selective load 112, 3, 8, 11,12, 13, 20 only Polarization Code Body Style Contact Code Solder Dip Termination Number of Contact Positions
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EIA364
MS3197-22-Y1
SAE-AS31971)
MIL-DTL-55302
MS3197-22-X1
MIL-DTL-55302
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FKE 10.9
Abstract: No abstract text available
Text: 100 SERIES 2 ROW STRAIGHT RECEPTACLE or PLUG AND RIGHT ANGLE RECEPTACLE FBR M55302 / 56 Receptacle M55302 / 62 Receptacle M55302 / 64 Receptacle P/N Body Style FDR - M55302 / 58 Receptacle FXX XX XX - XX - XX - XXX T L _ C ontact Code see page F18 — Hardw are Code —
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M55302
FKE 10.9
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K5369
Abstract: K544 K5635
Text: • fw M w h o f < iw > n l REVISIONS mm fig r i l i Mt to ba d «tali « In port, fir iMMrfMfcm M m ar ar m M Iì l 'hp h m oMmt t a n t a i M OorporoWin «Mm* tUtrr OMMrtt t, ft * ttoi * m ngM It granM to m m w— ywwww> itmW mi d w — I._ SYM A
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K4667
HK4723
K4818
K5369
K5449
K5502
K5635
RPV40308Q/001
CDMAMIP200000
P3/23/09
K544
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qml-38535
Abstract: 54F283 CQCC1-N20 FORM2234 GDFP2-F16 GDIP1-T16
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Rajesh Pithadia STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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R00470Ã
qml-38535
54F283
CQCC1-N20
FORM2234
GDFP2-F16
GDIP1-T16
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EIA-364
Abstract: 2d 1002 6 pin
Text: Specifications "F" Series . 100" £ Material and Finish Molded Insulator: 40% Glass Filled Polyphenylene Sulfide, Per MIL-DTL-55302 Pin Contacts: Copper Alloy per MIL-DTL-55302. Socket Contacts: Contacts: Terminal: Be Cu per MIL-DTL-55302. Copper Alloy per MIL-D TL-55302.
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MIL-DTL-55302
MIL-DTL-55302.
TL-55302.
perASTM-A581
SAE-AMS-2700
ASTM-B196
SAE-AMS-QQ-N-290
EIA-364
2d 1002 6 pin
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