MARKING FY PNP Search Results

MARKING FY PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)

MARKING FY PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA1662 Abstract: KTC4374 2sa166 MARKING FY pnp MARKING FY pnp 2sa1662 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1662 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	OT-89 2SA1662 OT-89 KTC4374 -50mA -200mA -200mA -20mA -10mA 2SA1662 KTC4374 2sa166 MARKING FY pnp MARKING FY pnp 2sa1662	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1662 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-89-3L 2SA1662 OT-89-3L KTC4374 -10mA -50mA -200mA -200mA -20mA -10mA	PDF
2SA1662 Abstract: ktc4374 Text: 2SA1662 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features B 0.8 MIN Complementary to KTC4374 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	2SA1662 OT-89 OT-89 KTC4374 -10mA -50mA -200mA -20mA 2SA1662 ktc4374	PDF
Untitled Abstract: No abstract text available Text: Transistors SMD Type PNP General Purpose Transistors KTA1662 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Small Flat Package. 3 0.53±0.1 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 0.40±0.1 ● Complementary to KTC4374.	Original	KTA1662 OT-89 KTC4374. -200m -50mA -200mA, -20mA -10mA	PDF
PN3906 TRANSISTOR PNP Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92	Original	SPT/TO-92 SPTTO-92 llU--800 loo250-700 loo--300 lOO-60( 250-63t loo05 loo56 UMT3906 PN3906 TRANSISTOR PNP 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A	PDF
transistor BC SERIES Abstract: BC848T TRANSISTOR BC 313 BC transistor series transistor Bc 580 846BT BC856T C847b transistor BC 312 BC847BT Text: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T; BC848T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose sw itching and am plification, especially	OCR Scan	BC846T; BC847T; BC848T SC-75 BC856T, BC857T BC858T BC846AT 846BT BC847AT transistor BC SERIES TRANSISTOR BC 313 BC transistor series transistor Bc 580 BC856T C847b transistor BC 312 BC847BT	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M	OCR Scan	BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2	OCR Scan	47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75	PDF
BFR194 Abstract: No abstract text available Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA RN4903 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A Q f) 3 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm ü .l± U .l .1.2 5 * 0.1 • Including Two Devices in US6 (U ltra Super Mini Type with 6	OCR Scan	RN4903 22kil	PDF
F5211 Abstract: 24 LC 0261 MMBR521L Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B R 521L T 1* MRF521 M R F 5 2 1 1LT1 The RF Line PNP Silicon H igh-Frequency Transistor ‘ Motorola Preferred Device Designed primarily for use in the high-gain, !ow-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable ¡n applications requiring fast switching	OCR Scan	MMBR521LT1) MRF521, MRF5211LT1) MRF521 MMBR521LT1 MRF521 F5211 24 LC 0261 MMBR521L	PDF
transistor top 222 Abstract: SOT323 Marking LE transistor 222 MARKING BM Text: Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3	OCR Scan	2PD1820A SC-70; OT323 2PB1219A. 2PD1820AQ 2PD1820AR 2PD1820AS OT323) transistor top 222 SOT323 Marking LE transistor 222 MARKING BM	PDF
marking code ACP transistor Abstract: marking code AAp BCW60C Text: Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.	OCR Scan	BCW61 BCW60A BCW60B BCW60C BCW60D BCW60 marking code ACP transistor marking code AAp	PDF
TRANSISTOR t1p Abstract: marking t1p t1p TRANSISTOR Text: Philips Semiconductors Product specification NPN switching transistors FEATURES PMST2222; PMST2222A PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching and linear amplification.	OCR Scan	OT323 PMST2907A. PMST2222; PMST2222A PMST2222 OT323) PMST2222A TRANSISTOR t1p marking t1p t1p TRANSISTOR	PDF

2222a sot23 Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31 Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.	OCR Scan	FMMT2222 FMMT2222A FMMT2907 OT-23 FMMT2222A Co00/300 FMMT2369A 2222a sot23 2222a bc 2222a 50s MARKING CODE BCV72 BCW29 BFQ31	PDF
rm 6203 Abstract: No abstract text available Text: Ordering number:ENN6611 PNP/NPN Epitaxial Planar Silicon Transistors MCH6103/MCH6203 DC/DC Converter Applications Applications Package Dimensions • R elay drivers, lamp drivers, m otor drivers and strobes. unit:mm 2177 [M C H 6103/M C H 6203] Features 0.3,	OCR Scan	ENN6611 MCH6103/MCH6203 6103/M rm 6203	PDF
transistor 1431 T Abstract: BR521L Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 D e s ig n e d p rim a rily fo r use in th e h ig h -g a in , lo w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast	OCR Scan	MMBR521LT1) MRF5211LT1) MRF5211LT1 MMBR521LT1 transistor 1431 T BR521L	PDF
bcb57b Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80	OCR Scan	0DbflH37 BC856 BC857 BC858 OT-23 BC856 200/xA OT-23. bcb57b BCB57 BC856B 3BP BC856A BC856B silicon planar epitaxial transistors BC857A BC857B	PDF
fy sot 143 Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA Text: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers	OCR Scan	b3b725H G100147 110Tb MMBR521LT1) MRF521, MRF5211LT1) OT-23 fy sot 143 Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA	PDF
2N3903 MOTOROLA SOT-23 Abstract: MPS3640 MMBT2907A MMBT2907 MMBT3903 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904 Text: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA TL FI SC XSTRS/R i DE I b 3 t i 7 2 S 4 F 96D 00flE03b 82036. T D - M A X I M U M R ATINGS Rating Symbol MPS2907 40 MPS2907A 60 Unit VcEO VcBO Emitter-Base Voltage Ve b o 5.0 Vdc lc 600 mAdc Collector Current — Continuous	OCR Scan	000203b MPS2907 MPS2907A MMBT3903 MMBT3904 X10-4 2N3903 MOTOROLA SOT-23 MPS3640 MMBT2907A MMBT2907 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904	PDF
TH01 Abstract: TK71 TK71340M Text: TK71340M TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking	OCR Scan	TK71340M DB3-I021 TK71340M QH7-B012. DP3-G014. TH01 TK71	PDF
Untitled Abstract: No abstract text available Text: Final Electrical Specifications r r u n LTC1258 m TECHNOLOGY M ic ro p o w e r Low D ro p o u t R efe re nce D e c e m b e r 1998 FCRTURCS D C S C R IP TIO n • 200mV Max Dropout at 10mA Output Current ■ 4uA Typical Quiescent Current ■ 0.4% Max Initial Accuracy	OCR Scan	LTC1258 200mV 40ppm/ 75mV/mA, 800nA 10ppm/ LT1634 LT1460 LTC1540	PDF
sot23 marking JS v Abstract: No abstract text available Text: u f _LT1027 m TECHNOLOGY P recision 5V R e fe re n c e FCnTURCS D C S C R IP T IO n • Very Low Drift: 2ppm/°C MaxTC ■ Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only ■ Output Sources 15mA, Sinks 10mA ■ Excellent Transient Response Suitable for	OCR Scan	LT1027 16-bit LT1027 10ppm/ OT-23 1027fa sot23 marking JS v	PDF
BSX19 equivalent Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868 Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small	OCR Scan	OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868	PDF

MARKING FY PNP Search Results

MARKING FY PNP Result Highlights (5)

MARKING FY PNP Datasheets Context Search

2SA1662

Untitled

2SA1662

Untitled

PN3906 TRANSISTOR PNP

transistor BC SERIES

Untitled

Untitled

BFR194

Untitled

F5211

transistor top 222

marking code ACP transistor

TRANSISTOR t1p

2222a sot23

rm 6203

transistor 1431 T

bcb57b

fy sot 143

2N3903 MOTOROLA SOT-23

TH01

Untitled

sot23 marking JS v

BSX19 equivalent