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    MARKING G14 Search Results

    MARKING G14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING G14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pcb diagram welding inverter

    Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
    Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive


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    PDF MIXA20W1200MC 20091002a pcb diagram welding inverter CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM

    UC320

    Abstract: CIRCUIT diagram welding inverter diode K14
    Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state


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    PDF MIXA20W1200MC 20110304b UC320 CIRCUIT diagram welding inverter diode K14

    Untitled

    Abstract: No abstract text available
    Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state


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    PDF MIXA20W1200MC 20110304b

    5800c

    Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
    Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V


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    PDF TM5500/TM5800 TM5800-933 CoolRun80 5800C093310 TM5800-867 5800C086710 TM5800-800 5800A080010 TM5500-800 5800c bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800

    bios programmer

    Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
    Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP


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    PDF TM5800 TM5800-1000-ULP CoolRun80 5800T100021 TM5800-1000-VLP 5800N100021 TM5800-1000-LP 5800P100021 bios programmer sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM

    block diagram of crusoe processor

    Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
    Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz


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    PDF TM55E/TM58E TM58EX-933 58EXAE093321 TM58EL-800 58ELAD080021 TM55EL-667 55ELAC066721 TM55E/TM58E block diagram of crusoe processor bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667

    FMX-G14S

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FMX-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMX-G14S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification,etc. Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings


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    PDF FMX-G14S FMX-G14S. UL94V-0 Dielect030901 FMXG14 FMX-G14S

    FMX-G14S

    Abstract: FMXG14 silicon diode
    Text: SANKEN ELECTRIC CO., LTD. FMX-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMX-G14S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification,etc. Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings


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    PDF FMX-G14S FMX-G14S. UL94V-0 10msec. FMXG14 FMX-G14S FMXG14 silicon diode

    FMN-G14S

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FMN-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G14S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent


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    PDF FMN-G14S FMN-G14S. UL94V-0 FMNG14 FMN-G14S

    FMB-G14

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FMB-G14 1. Scope The present specifications shall apply to an FMB-G14L. 2. Outline High Frequency Rectification Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent


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    PDF FMB-G14 FMB-G14L. UL94V-0 FMBG14 FMB-G14

    FML-G14S

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FML-G14S 1. Scope The present specifications shall apply to an FML-G14S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent 3. Absolute maximum ratings


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    PDF FML-G14S FML-G14S. UL94V-0 10msecage FMLG14 FML-G14S

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FMN-G14S 1 適用範囲 Scope この規格はFMN-G14S について適用する。 The present specifications shall apply to Sanken silicon diode, FMN-G14S. 2 概要 Outline 種 別 Type 構 造 Structure 主 用 途 Applications


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    PDF FMN-G14S FMN-G14S. UL94V UL94V-0 FMNG14

    fmbg14

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. FMB-G14 1 適用範囲 Scope この規格はFMB-G14 について適用する。 The present specifications shall apply to an FMB-G14L. 2 概要 Outline 種 Type 別 ショットキーバリアダイオード Silicon Schottky Barrier Diode


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    PDF FMB-G14 FMB-G14L. UL94V-0 FMBG14 fmbg14

    Stereo Audio Amplifier

    Abstract: No abstract text available
    Text: G1432 Global Mixed-mode Technology Inc. 2.6W Stereo Audio Amplifier Features General Description „ The G1432 is a stereo audio power amplifier in 24pin TSSOP thermal pad package or 24pin QFN package. It can drive 2.0W continuous RMS power into 4Ω load per channel in Bridge-Tied Load BTL mode at 5V


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    PDF G1432 G1432 24pin 24pin TSSOP-24 G1432L G1432L QFN4X4-24 Stereo Audio Amplifier

    g1402

    Abstract: audio amplifier SOP
    Text: G1402 Global Mixed-mode Technology Inc. Dual Output Rail-to-Rail, High Slew-Rate Amplifiers Features „ „ „ „ „ „ „ „ „ General Description High Performance Class AB Amplifier Output Rail-to-Rail Input Common Mode 0~5.7V Low Distortion Low Power Consumption


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    PDF G1402 G1402 G1402P1U G1402P1Uf audio amplifier SOP

    G1403

    Abstract: No abstract text available
    Text: G1403 Global Mixed-mode Technology Inc. Stereo Headphone Power Amplifier with ActiveLow Shutdown Features General Description „ The G1403 is an output rail-to-rail stereo audio power amplifier housed in a 8-pin MSOP-8 package capable of delivering 100mW of continuous power into 16Ω


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    PDF G1403 G1403 100mW G1403P81U

    G1404

    Abstract: cd-rom rf amplifier
    Text: G1404 Global Mixed-mode Technology Inc. Stereo Headphone Power Amplifier with ActiveHigh Shutdown Features General Description „ The G1404 is an output rail-to-rail stereo audio power amplifier housed in a 8-pin MSOP-8 package capable of delivering 100mW of continuous power into 16Ω


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    PDF G1404 G1404 100mW G1404P81U cd-rom rf amplifier

    G1410

    Abstract: QFN3X3-16 G1410Q4U
    Text: G1410 Global Mixed-mode Technology Inc. Capless Stereo Headphone Driver Features „ „ „ „ „ „ „ „ „ „ „ General Description 7mA Quiescent Current. No Output DC-Blocking Capacitors Ground-Referenced Outputs Eliminate DC-Bias Voltages on Headphone Ground Pin.


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    PDF G1410 G1410 QFN3X3-16 G1410Q4U QFN3X3-16 G1410Q4U

    G1448

    Abstract: No abstract text available
    Text: G1448 Global Mixed-mode Technology Inc. 1.2 Watt Audio Power Amplifier Features General Description „ 3V~5.5V Operation The G1448 is an audio power amplifier that can continuously deliver 1 Watt average power to 8Ω speakers with less than 1% distortion THD+N at 5V power


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    PDF G1448 G1448 G1448P81U

    Untitled

    Abstract: No abstract text available
    Text: G1456 Global Mixed-mode Technology Inc. 2.1W Stereo Audio Amplifier with Shutdown Mode Features General Description „ The G1456 is a stereo audio power amplifier in 16 pin TQFN3X3-16 with thermal pad package. It can drive 1.45W continuous RMS power into 4Ω load in


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    PDF G1456 G1456 TQFN3X3-16 G1456R41U TQFN3X3-16

    B82791-G14-A16

    Abstract: B82791-G14 B82791-G14-A12 B82791-G14-A17
    Text: Jump to preceding page Chokes for Data and Signal Lines B82791-G14 Quad Chokes Rated voltage 42 Vac/80 Vdc Rated current 0,1 A Rated inductance 0,2 to 6 mH Construction • Current-compensated ring core quad choke with ferrite core ■ Plastic case Features


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    PDF B82791-G14 Vac/80 B82791-G14-A12 B82791-G14-A16 B82791-G14-A17 B82791-G14-A16 B82791-G14 B82791-G14-A12 B82791-G14-A17

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BSS56 f025 ic marking z7

    2N2475

    Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI