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    MARKING G5S Search Results

    MARKING G5S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING G5S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    transistor A1267

    Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
    Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration


    Original     		PDF 3-04W 3-05W VSO05561 3-06W Q62702-A1261 OT-323 Q62702-A1267 transistor A1267 A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561

    Pin diode G4S

    Abstract: BAR63 BAR63-05 A2 SOT23 BAR63-06 BAR63-04 c2 sot23
    Text: BAR63. Silicon PIN Diodes 3  PIN diode for high speed switching of RF signals Low forward resistance  Very low capacitance 2  For frequencies up to 3 GHz 1 BAR63-04 BAR63-05 BAR63-06 3 3 3 1 2 1 2 EHA07005 1 VPS05161 2 EHA07006 EHA07004 Type Marking


    Original     		PDF BAR63. BAR63-04 BAR63-05 BAR63-06 VPS05161 EHA07005 EHA07006 EHA07004 Pin diode G4S BAR63 BAR63-05 A2 SOT23 BAR63-06 BAR63-04 c2 sot23

    Untitled

    Abstract: No abstract text available
    Text: BAR 63. Silicon PIN Diodes 3  PIN diode for high speed switching of RF signals Low forward resistance  Very low capacitance 2  For frequencies up to 3 GHz 1 BAR 63-04 BAR 63-05 BAR 63-06 3 3 3 1 2 VPS05161 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking


    Original     		PDF VPS05161 EHA07005 EHA07006 EHA07004 OT-23 EHD07138 100MHz EHB07147

    g5sba60

    Abstract: No abstract text available
    Text: G5SBA20 and G5SBA60 Glass Passivated Single-Phase Bridge Rectifier ct Case Type GBU du o r P New 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER Features 9o TYP. 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8)


    Original     		PDF G5SBA20 G5SBA60 125OC 50mVp-p g5sba60

    Untitled

    Abstract: No abstract text available
    Text: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Reverse Voltage 200 and 600 V Forward Current 6.0 A Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)


    Original     		PDF G5SBA20 G5SBA60 E54214 50mVp-p 12-May-04

    G5SBA20

    Abstract: G5SBA60
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes FEATURES Case Style GBU 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)


    Original     		PDF G5SBA20 G5SBA60 300ms 50mVp-p G5SBA60

    Untitled

    Abstract: No abstract text available
    Text: G5SBA20 and G5SBA60 Glass Passivated Single-Phase Bridge Rectifier ct Case Type GBU du o r P New 0.020 R TYP. 0.125 (3.2) x 45o CHAMFER 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) Reverse Voltage 200 and 600 V Forward Current 6.0 A 0.140 (3.56) 0.130 (3.30)


    Original     		PDF G5SBA20 G5SBA60 E54214 125OC 50mVp-p

    Untitled

    Abstract: No abstract text available
    Text: G5SBA20 and G5SBA60 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP.


    Original     		PDF G5SBA20 G5SBA60 E54214 50mVp-p 08-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features • This series is UL listed under the Recognized Component Index, file number E54214 • High case dielectric strength of 1500 VRMS


    Original     		PDF G5SBA20 G5SBA60 E54214 50mVp-p 24-Aug-04

    G5SBA20

    Abstract: G5SBA60
    Text: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP. 0.160 (4.1)


    Original     		PDF G5SBA20 G5SBA60 E54214 50mVp-p 07-Oct-02 G5SBA60

    Untitled

    Abstract: No abstract text available
    Text: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP. 0.160 (4.1)


    Original     		PDF G5SBA20 G5SBA60 E54214 str100 50mVp-p 21-Feb-03

    marking G5s

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 marking G5s BAR63-02L BAR63-02V

    Pin diode G4S

    Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L Pin diode G4S BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L BAR63-02V

    BAR63-05

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02L BAR63-02V

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)


    Original     		PDF BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-02L* BAR63-02V BAR63-02V

    BAR63-02W

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)


    Original     		PDF BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02W BAR63-02L BAR63-02V

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 3-04W 3-05W 3-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 OT-323

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes _ FEATURES_ Case Stvle GBU ♦ Plastic package has Underwriters Laboratory Flammability


    OCR Scan     		PDF G5SBA20 G5SBA60 E54214

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes _ FEATURES_ Case Stvle GBU ♦ Plastic package has Underwriters Laboratory Flammability


    OCR Scan     		PDF G5SBA20 G5SBA60 E54214 prefe/24/99

    Pin diode G4S

    Abstract: marking g4s Q62702-A1261
    Text: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>


    OCR Scan     		PDF 3-04W 3-05W 3-06W eHA0718> 3-04W 3-05W Q62702-A1261 Q62702-A1267 Q62702-A1268 Pin diode G4S marking g4s