Untitled
Abstract: No abstract text available
Text: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU530A
BFU530A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU550A
BFU550A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU520A
BFU520A
AEC-Q101
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B14A equivalent
Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse
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11ACE
TVSP05PT
OT-23
LTVSJ12ESPT
LTVSJ15ESPT
SC-79
B14A equivalent
zener b14a
P6SBMJ24A
B17C
tvs2315pt
TVSS5VESPT
diode B14A
B14A zener equivalent
A17a
P4SSMJ24A
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BAR66
Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAR66.
BAR66
Feb-04-2003
BAR66
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ch340s
Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR
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CH025S-40PT
CH43H-30PT
CH035H-20PT
CH035H-30PT
CH035H-40PT
CH015H-40PT
CH015H-50PT
CH015H-60PT
CH157H-70PT
BAT43BPT
ch340s
MARKING JW SOT-23
marking 3U 3T 3C diode 3E 3G
BAT54BDWD1PT
BA5 marking
BA6 marking
transistor marking lv4
ch740h40
kl3 59
MF sot-23
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BAR66
Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAR66.
BAR66
Aug-25-2004
BAR66
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BAR66
Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAR66.
BAR66
BAR66
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4435a
Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V
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MMHZ5270BPT
Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)
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OT-23
MMHZ5270BPT
GP 52b DIODE
marking 24b sot-23
MMHZ5232
MMSZ5247SPT
MMPZ5232BPT
zener diode in 5229 b
MMPZ5250BPT
MMPZ5221BPT
MMPZ5235BPT
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GP 005 DIODE
Abstract: BAR66 BCW66 marking PMs
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAR66 ! , , Type BAR66 Package SOT23 Configuration
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BAR66.
BAR66
GP 005 DIODE
BAR66
BCW66
marking PMs
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2I k
Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection • Pb-free RoHS compliant package BAR66 ! , , Type BAR66 Package SOT23 Configuration series LS(nH) 1.8 Marking PMs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAR66.
BAR66
2I k
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Untitled
Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAR66.
BAR66
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marking WJ sot-23
Abstract: chdtc143eept SOT-723 NPN SOT-23 WF CHDTC114EEPT NPN SOT-23 MARKING Wj ZUA SOT23 CHDTC143XUPT transistor marking 44 sot23 CHDTC143XMPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Bias Equivalent Gain Outline
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CHDTC114TMPT
CHDTC115TMPT
CHDTC123TMPT
CHDTC124TMPT
CHDTC143TMPT
CHDTC144TMPT
CHDTC114TEPT
CHDTC115TEPT
CHDTC124TEPT
CHDTC143TEPT
marking WJ sot-23
chdtc143eept
SOT-723
NPN SOT-23 WF
CHDTC114EEPT
NPN SOT-23 MARKING Wj
ZUA SOT23
CHDTC143XUPT
transistor marking 44 sot23
CHDTC143XMPT
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
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wa sot23
Abstract: BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR
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1SS400GPT
BD4148FPT
MMBD4448FPT
1SS387PT
1SS420PT
1SS400PT
1SS380PT
MMBD4448HPT
1SS355PT
1SS358PT
wa sot23
BAV99TPT
1SS355PT
CHBD2004SPT
CHP202UPT
CH204UPT
SOT 23 A7 diode
5d sot 23
CHN202UPT
Diode SOT-23 marking JE
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16-2-472
Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.
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THN5601SF
OT-23F
THN5601SF
OT-23F
26dBm
900MHz
IS21I
16-2-472
161-717
45650
Transistor S 40442
SMD IC MARKING GP
marking am1 smd
25804
403 inductor coil smd
RF NPN POWER TRANSISTOR C 10-12 GHZ
hn6501
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Q62702-F1372
Abstract: No abstract text available
Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62702-F1372
OT-23
Q62702-F1372
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2SB772P
Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600
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SC-62
2SB772P
SOT-23 marking 717
cht9435zpt
CH3906XPT
9435Z
CHT2907XPT
CH772PT
CH3906
CH772P
2SB772PT-E
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Transistor S 40442
Abstract: THN5601SF 61529 78262 161-717 37185 177960 54368 120770 16-2-472
Text: THN5601SF Semiconductor SiGe NPN Transistor Unit in mm SOT-23F □ Applications o VHF and UHF band medium power amplifier □ Features o 4.8 V operation o P1dB = 26 dBm at f = 900 MHz o GP = 9.0 dB at f = 900 MHz □ hFE Classification Pin Configuration Pin No
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THN5601SF
OT-23F
300GHz
500GHz
700GHz
900GHz
000GHz
IS21I
Transistor S 40442
THN5601SF
61529
78262
161-717
37185
177960
54368
120770
16-2-472
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BFR106
Abstract: spice gummel
Text: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 2 3 @ 900 MHz, 8 V, 70 mA 1 • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage
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BFR106
AEC-Q101
BFR106
spice gummel
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SOT-143 MARKING 550
Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
Text: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8
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OCR Scan
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OT143
S858TA1
S858TA3
S868T
S860T
S872T
OT143
BFP67
BFP92A
BFP93A
SOT-143 MARKING 550
S852T
S868
T0-50
TEMIC S868T
BFP183T
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BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
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OCR Scan
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fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
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siemens s450
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFR 93A • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. E CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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OT-23
siemens s450
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