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    MARKING H1 AMP Search Results

    MARKING H1 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC412A/B2A Rochester Electronics LLC CLC412 - Op Amp - Dual marked (5962-9471901M2A) Visit Rochester Electronics LLC Buy
    UA733M/BCA Rochester Electronics LLC UA733 - Differential Video Amplifier - Dual marked (8418501CA) Visit Rochester Electronics LLC Buy
    UA733M/BIA Rochester Electronics LLC UA733 - Differential Video Amplifier - Dual marked (8418501IA) Visit Rochester Electronics LLC Buy
    CLC425A/BPA Rochester Electronics LLC CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) Visit Rochester Electronics LLC Buy
    LM747A/BCA Rochester Electronics LM747 - OP AMP, GENERAL PURPOSE, DUAL - Dual marked (M38510/10102BCA) Visit Rochester Electronics Buy

    MARKING H1 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST Microelectronics Transistors

    Abstract: transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70
    Text: BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 69 H1 BCW 70 H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BCW69 BCW70 OT-23 ST Microelectronics Transistors transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70

    smd marking h12

    Abstract: marking code H1 SMD smd diode code H1 smd diode marking BM smd diode h15 smd diode code H12 SMD CODE H11 smd code marking BM smd diode marking BM 28 QW-BB038
    Text: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBMH120-G Thru. CDBMH1150-G Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device SOD-123T Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBMH120-G CDBMH1150-G MIL-STD-19500 CDBMH130-G CDBMH140-G CDBMH150-G CDBMH160-G CDBMH180-G CDBMH1100-G smd marking h12 marking code H1 SMD smd diode code H1 smd diode marking BM smd diode h15 smd diode code H12 SMD CODE H11 smd code marking BM smd diode marking BM 28 QW-BB038

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.


    Original     		PDF HE9012 HI340 HI340 O-251 183oC 217oC 260oC

    marking code k1

    Abstract: A1 marking code amplifier marking A1 TRANSISTOR HI350 transistor mark code H1
    Text: HI-SINCERITY Spec. No. : HE9008 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI350 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI350 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.


    Original     		PDF HE9008 HI350 HI350 O-251 183oC 217oC 260oC marking code k1 A1 marking code amplifier marking A1 TRANSISTOR transistor mark code H1

    transistor mark code H1

    Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


    Original     		PDF HE9003 HI649A HI649A O-251 183oC 217oC 260oC transistor mark code H1 A1 marking code amplifier y2 marking marking Y1 transistor

    HE9013

    Abstract: HI42C MARK Y1 Transistor
    Text: HI-SINCERITY Spec. No. : HE9013 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.


    Original     		PDF HE9013 HI42C HI42C O-251 183oC 217oC 260oC HE9013 MARK Y1 Transistor

    HI41C

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9010 Issued Date : 1996.02.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI41C is designed for use in general purpose amplifier and switching applications.


    Original     		PDF HE9010 HI41C HI41C O-251 183oC 217oC 260oC

    HI3669

    Abstract: ic k1
    Text: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HE9029 HI3669 HI3669 O-251 183oC 217oC 260oC ic k1

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


    Original     		PDF HE9004 HI669A HI669A O-251 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.


    Original     		PDF HE9001 HI31C HI31C O-251 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.


    Original     		PDF HE9002 HI32C HI32C O-251 183oC 217oC 260oC

    transistor mark code H1

    Abstract: HI669A
    Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2006.12.06 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


    Original     		PDF HE9004 HI669A HI669A O-251 10sec transistor mark code H1

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.


    Original     		PDF HE9028 HI10387 HI10387 O-251 183oC 217oC 260oC

    transistor mark code H1

    Abstract: HI10387 A1 marking code amplifier
    Text: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.


    Original     		PDF HE9028 HI10387 HI10387 O-251 183oC 217oC 260oC transistor mark code H1 A1 marking code amplifier

    HI882

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HE9014 HI882 HI882 O-251 183oC 217oC 260oC

    HI112

    Abstract: transistor marking y2 IC DATE CODE power transistor Ic 4A NPN to - 251
    Text: HI-SINCERITY Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2005.12.20 Page No. : 1/5 MICROELECTRONICS CORP. HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		PDF HE9033 HI112 HI112 O-251 183oC 217oC 260oC transistor marking y2 IC DATE CODE power transistor Ic 4A NPN to - 251

    HI882

    Abstract: HE9014 transistor mark code H1 transistor Ic 1A NPN
    Text: HI-SINCERITY Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator,


    Original     		PDF HE9014 HI882 HI882 O-251 10sec HE9014 transistor mark code H1 transistor Ic 1A NPN

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9015 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HE9015 HI772 HI772 O-251 183oC 217oC 260oC

    H*772

    Abstract: he9015 HI772
    Text: HI-SINCERITY Spec. No. : HE9015 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator,


    Original     		PDF HE9015 HI772 HI772 O-251 10sec H*772 he9015

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBMH120-G Thru. CDBMH1150-G Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device Features SOD-123T -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBMH120-G CDBMH1150-G OD-123T CDBMH120-G CDBMH130-G CDBMH140-G CDBMH150-G CDBMH160-G CDBMH180-G CDBMH1100-G

    smd marking h12

    Abstract: smd diode marking BM marking code H1 SMD smd diode h15 QW-JB016
    Text: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBMH120-HF Thru. CDBMH1150-HF Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123T Features 0.154 3.9 0.138(3.5) 0.012(0.3) Typ. -Batch process design, excellent power dissipation offers


    Original     		PDF CDBMH120-HF CDBMH1150-HF MIL-STD-19500 CDBMH130-HF CDBMH140-HF CDBMH150-HF CDBMH160-HF CDBMH180-HF CDBMH1100-HF smd marking h12 smd diode marking BM marking code H1 SMD smd diode h15 QW-JB016

    B817

    Abstract: "B817" CE01 SFMC28-461
    Text: SFMC28-461 EMI FILTER 2.7 AMP EMI INPUT FILTER 28 VOLT INPUT FEATURES • Fully qualified to Class H or K • Passive components for maximum tolerance in space environments • –55° to +125°C operation • 28 volt input • Up to 2.7 amps throughput current


    Original     		PDF SFMC28-461 MIL-STD-461C, MIL-STD-704E MIL-STD-883 MIL-PRF-38534. SFME120 SFME28 B817 "B817" CE01 SFMC28-461

    Untitled

    Abstract: No abstract text available
    Text: LL Series Aluminum Electrolytic Capacitors Low Leakage Current MERITEK FEATURES • Standard low leakage current series  Suitable for Hi-Fi pre-amplifiers and TV oscillation loop circuits. SPECIFICATIONS Item Characteristic Operating Temp Range - 40 ~ +85C


    Original     		PDF 63VDC 120Hz 004CV

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND


    OCR Scan     		PDF BCW69 BCW70 OT-23 06B10 BCW69/BCW70 OT-23 0076D2b