Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)
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OCR Scan
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MT8D168
30-pin
200mW
096-cycle
A0-A10;
A0-A11
MT8DI68
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PDF
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2SA1163
Abstract: No abstract text available
Text: 2SA1163 SILICON PNP EPITAXIAL TYPE Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : VQgQ = —120V Excellent hjrg Linearity : hpE Ic= —0.1mA /hFE (IC = —2mA) = 0.95 (Typ.) High hp~E ; hFE = 200~700 Low Noise : NF = ldB (Typ.), lOdB (Max.)
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OCR Scan
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2SA1163
--120V
2SC2713
O-236MOD
SC-59
--10V,
2SA1163
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2859 TOSHIBA TRANSISTOR 7 SILICON NPN EPITAXIAL PCT PROCESS < ;r iS K Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. + 0.5 3.5-as SWITCHING APPLICATIONS. •i a ii5 • 1 . 0 - 0.15 Excellent hjrE Linearity
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OCR Scan
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2SC2859
2SA1182.
O-236MOD
SC-59
961001E
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PDF
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2sc3324
Abstract: marking CB
Text: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS W ÊF mm mm Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V c e O = 120V Excellent hp^ Linearity : hFE dC = 0,1mA) / hFE (IC = 2mA) = 0,95 (Typ.) High hjrg
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OCR Scan
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2SC3324
2SA1312
961001E
2sc3324
marking CB
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1587 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • • High Voltage : VCEO~ —120V Excellent hEE Linearity : hpE (Ic = —0.1mA) / hjrg (Iq = —2mA) = 0.95 (Typ.)
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OCR Scan
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2SA1587
2SC4117
961001EAA2'
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PDF
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2SA1163
Abstract: No abstract text available
Text: 2SA1163 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 1 6 3 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o —_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.)
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OCR Scan
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2SA1163
2SC2713
2SA1163
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1873 2 S A 1 873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. Small Package (Dual Type) High Voltage and High Current : VC E 0= —50V, I e = - 150mA (MAX.) High hpE Excellent hjrg Linearity
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OCR Scan
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2SA1873
150mA
2SC4944
961001EAA2'
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1163 TO SHIBA 2 S A 1 1 63 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : V c e O= —120V Excellent hjrg Linearity : hpE OC = - 0.1mA) / hpE dC = -2mA) = 0.95 (Typ.)
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OCR Scan
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2SA1163
2SC2713
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1587 TOSHIBA 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • High Voltage : V q e O “ - 120V Excellent hpE Linearity : hpE (Iq = —0.1mA) / hjr^ (Iç = —2mA) = 0.95 (Typ.)
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OCR Scan
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2SA1587
2SC4117
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PDF
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A1162
Abstract: 2SA1162 2SC2712
Text: TOSHIBA 2SA1162 2 S A 1 162 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VCEO = —50V, IC= -150m A (M ax.) • Excellent hpE Linearity : hpE (Ic = —0.1mA) / hjrj] (Iç; = —2mA) = 0.95 (Typ.)
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OCR Scan
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2SA1162
--50V,
-150m
2SC2712
961001EAA2'
A1162
2SA1162
2SC2712
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V q e O = 120V Excellent hpE Linearity hpE (IC = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.) High hpE
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OCR Scan
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2SC3324
2SA1312
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity
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OCR Scan
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HN1C01F
150mA
100mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE HN2A01FU U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : V q e o ——50V, I q = —150mA(Max.) • High h p g : hj>E = 120-400 • Excellent hjrj; Linearity
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OCR Scan
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HN2A01FU
----50V,
--150mA
--100mA,
--10mA
--10V,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1587 SILICON PNP EPITAXIAL TYPE U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : V q e o = —120V Excellent hjrg Linearity :hpE Ic = —0.1m A /hfE (Ic = —2mA) = 0.95 (Typ.) High hpE : hj'E = 200~700 Low Noise : NF = ldB (Typ.), 10dB(Max.)
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OCR Scan
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2SA1587
--120V
2SC4117
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PDF
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marking POJ
Abstract: 2SA1204 2SC2884
Text: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6 M AX — High DC Current Gain : hjrE = 100~320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate)
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OCR Scan
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2SC2884
2SA1204
250mm2
marking POJ
2SA1204
2SC2884
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PDF
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2SC3326
Abstract: No abstract text available
Text: TOSHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS + 0.5 High Emitter-BaseVoltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA)
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OCR Scan
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2SC3326
2SC3326
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE HN3B02FU TOSHIBA TRANSISTOR SILICON PNP-NPN EPITAXIAL TYPE PCT PROCESS HN3B02FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 i 0,1 Ql High Voltage : V q e o = —50 V High Current : Iç = —150 mA (Max.) High hjrE
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OCR Scan
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HN3B02FU
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PDF
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SC4213
Abstract: toshiba 4213 transistor 4213 2SC4213
Text: 2SC4213 TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR MUTING AND SWITCHING APPLICATIONS 2.1 ¿ 0.1 High Emitter-Base Voltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrE = 150 (Typ.) (VCE = —2V, IC = —4mA)
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OCR Scan
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2SC4213
SC4213
SC4213
toshiba 4213
transistor 4213
2SC4213
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PDF
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transistor 4213
Abstract: 2SC4213 SC4213
Text: 2SC4213 TO SH IBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package Ve BO = 25V (Min.)
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OCR Scan
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2SC4213
SC4213
transistor 4213
2SC4213
SC4213
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PDF
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2SC3326
Abstract: marking cc
Text: TO SH IBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package + 0.5
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OCR Scan
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2SC3326
2SC3326
marking cc
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PDF
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2SC4181
Abstract: 2SC41 2SC4181A
Text: DATA SHEET NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC4181,2SC4181A AUDIO FREQUENCY AMPLIFIER,SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • High DC Current Gain : hjrE = 1 0 0 0 to 3 2 0 0 • Low V c E s a t : v CE(sat) = 0 .0 7 V T Y P . •
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OCR Scan
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2SC4181
2SC4181A
2SC41
2SC4181A
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PDF
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ir131
Abstract: No abstract text available
Text: TOSHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M A X 4.6 M A X . • 1.7 M A X High DC Current Gain and Excellent hjrg Linearity : hFE (1) = 140-600 (VCE = IV, IC = 0.5A)
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OCR Scan
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2SC2982
ir131
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PDF
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marking IAY
Abstract: 2SA1832F 2SC4738F
Text: 2SA1832F TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm 1.6 ± 0.1 • 0.85 ± 0.1 High Voltage and High Current : V c e O = - 5 0 V, I q = - 1 5 0 mA (max.)
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OCR Scan
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2SA1832F
2SC4738F
marking IAY
2SA1832F
2SC4738F
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • 1.6 ± 0.1 High Voltage and High Current ; V0 EO = 5OV, Iq = 150mA (Max.) Excellent hpg Linearity : hpE dC = 0.1mA) / hpE dC = 2mA) = 0.95 (Typ.)
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OCR Scan
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2SC4738F
150mA
2SA1832F
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PDF
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