HM200
Abstract: HM879 marking 3A sot-89 Germanium Transistor
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor.
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HM200203
HM879
OT-89
HM200
HM879
marking 3A sot-89
Germanium Transistor
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HM2222A
Abstract: HM2907A
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9520 Issued Date : 1997.06.18 Revised Date : 2002.04.10 Page No. : 1/3 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
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HE9520
HM2907A
HM2907A
OT-89
HM2222A
HM2222A
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HM200
Abstract: HM1300
Text: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2002.08.15 Page No. : 1/3 MICROELECTRONICS CORP. HM1300 SILICON PNP EPITAXIAL TYPE Description • Strobo Flash Applications • Medium Power Amplifier Applications Features SOT-89 • High DC Current Ogin and Excellanr hFE Linearity
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HM200202
HM1300
OT-89
-50mA)
HM200
HM1300
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HM2222A
Abstract: HPN2907A
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9521 Issued Date : 1997.06.18 Revised Date : 2002.04.10 Page No. : 1/4 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
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HE9521
HM2222A
HM2222A
OT-89
HPN2907A
HPN2907A
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7805 SOT89
Abstract: 7805m 7805 sot-89 SOT-89, 7805 HM200 7805 SOT-89 1 in 7805 pin diagram H7805 H7805AM H7805BM
Text: HI-SINCERITY Spec. No. : HM200303 Issued Date : 1998.08.01 Revised Date : 2003.07.15 Page No. : 1/3 MICROELECTRONICS CORP. H7805AM H7805BM Low Current Positive Voltage Regulator Of Surface Mount Device Description SOT-89 The H7805_M series of surface mount device regulators are easy-to-use
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HM200303
H7805AM
H7805BM
OT-89
100mA.
H7805AM,
7805 SOT89
7805m
7805 sot-89
SOT-89, 7805
HM200
7805 SOT-89 1 in
7805 pin diagram
H7805
H7805AM
H7805BM
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HM200
Abstract: H7806 H7806AM H7806BM
Text: HI-SINCERITY Spec. No. : HM200104 Issued Date : 2001.10.01 Revised Date : 2001.10.11 Page No. : 1/3 MICROELECTRONICS CORP. H7806AM H7806BM Low Current Positive Voltage Regulator Of Surface Mount Device Description SOT-89 The H7806_M series of surface mount device regulators are easy-to-use
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HM200104
H7806AM
H7806BM
OT-89
100mA.
H7806AM,
HM200
H7806
H7806AM
H7806BM
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transistor GK sot-89
Abstract: HM200 sot-89 Marking GK HMM1225 HMX1225 sot marking HX HM200501
Text: HI-SINCERITY Spec. No. : HM200501 Issued Date : 2000.07.01 Revised Date : 2005.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMX1225 / HMM1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner
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HM200501
HMX1225
HMM1225
200uA
HMX1225/HMM1225
OT-89
400oC
183oC
217oC
260oC
transistor GK sot-89
HM200
sot-89 Marking GK
HMM1225
sot marking HX
HM200501
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HBT169M
Abstract: HM200
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4 HBT169M THYRISTORS Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These
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HM200105
HBT169M
OT-89
HBT169M
HM200
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H7805
Abstract: H431AM H431BM H431CM sot-89 MARKING CODE BM 1R1 marking
Text: HI-SINCERITY Spec. No. : HM200301 Issued Date : 1998.04.08 Revised Date : 2003.05.13 Page No. : 1/5 MICROELECTRONICS CORP. H431AM/BM/CM AJDUSTABLE SHUNT REGULATOR Description The H431XM series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage
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HM200301
H431AM/BM/CM
H431XM
OT-89
50ppmwithout
H431AM,
H431BM,
H431CM
H7805
H431AM
H431BM
H431CM
sot-89 MARKING CODE BM
1R1 marking
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HM27
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE9517-B
HM27
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HE6450
Abstract: 1902 transistor HM28S
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6450 Issued Date : 1992.11.25 Revised Date : 2002.04.18 Page No. : 1/3 HM28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HM28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER Voice Rom IC audio output driver stage amplifier
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HE6450
HM28S
HM28S
HE6450
1902 transistor
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OC 140 germanium transistor
Abstract: germanium transistors NPN HM879 Germanium Transistor
Text: HI-SINCERITY Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. SOT-89 Features • Charger-up time is about 1 mS faster than of a germanium transistor.
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HM200203
HM879
OT-89
183oC
217oC
260oC
OC 140 germanium transistor
germanium transistors NPN
HM879
Germanium Transistor
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PDF
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HM200
Abstract: HM3669
Text: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching
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HM200206
HM3669
HM3669
OT-89
200oC
183oC
217oC
260oC
245oC
HM200
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. :HE9517 Issued Date : 1997.06.06 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE9517
OT-89
183oC
217oC
260oC
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HM200
Abstract: HM200101 HM117 hm2001
Text: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching
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HM200101
HM117
OT-89
HM117
10sec
HM200
HM200101
hm2001
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HM200207 Issued Date : 2000.12.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM772A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC converter and driver.
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HM200207
HM772A
HM772A
OT-89
200oC
183oC
217oC
260oC
245oC
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PDF
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HM2222A
Abstract: HM2907A
Text: HI-SINCERITY Spec. No. :HE9520 Issued Date : 1997.06.18 Revised Date : 2007.04.17 Page No. : 1/4 MICROELECTRONICS CORP. HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
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HE9520
HM2907A
HM2907A
OT-89
HM2222A
10sec
HM2222A
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HE9521
Abstract: HM2222A HPN2907A hpn2907
Text: HI-SINCERITY Spec. No. :HE9521 Issued Date : 1997.06.18 Revised Date : 2008.08.04 Page No. : 1/5 MICROELECTRONICS CORP. HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
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HE9521
HM2222A
HM2222A
OT-89
HPN2907A
183oC
217oC
260oC
HE9521
HPN2907A
hpn2907
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PDF
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HM200
Abstract: HM117
Text: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching applications.
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HM200101
HM117
OT-89
HM117
183oC
217oC
260oC
HM200
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strobo led
Abstract: HM1300 MARKING BL SOT89
Text: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM1300 Silicon PNP Epitaxial Type Transistor Description • Strobo Flash Applications • Medium Power Amplifier Applications SOT-89
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HM200202
HM1300
OT-89
-50mA)
200oC
183oC
217oC
260oC
10sec
strobo led
HM1300
MARKING BL SOT89
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PDF
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HM772A
Abstract: HM200
Text: HI-SINCERITY Spec. No. : HM200207 Issued Date : 2000.12.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM772A PNP Epitaxial Planar Transistor Description The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC
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HM200207
HM772A
HM772A
OT-89
200oC
183oC
217oC
240oC
260oC
10sec
HM200
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PDF
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HE6450
Abstract: transistor h2a HM28S
Text: HI-SINCERITY Spec. No. : HE6450 Issued Date : 1992.11.25 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HM28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HM28S is a NPN silicon transistor, designed for use in general-purpose Speech Synthsizer Voice Rom IC audio output driver stage amplifier applications.
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HE6450
HM28S
HM28S
183oC
217oC
260oC
HE6450
transistor h2a
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PDF
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HM112
Abstract: HM200102
Text: HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching applications.
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HM200102
HM112
OT-89
HM112
183oC
217oC
260oC
HM200102
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hm112
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching
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HM200102
HM112
OT-89
HM112
10sec
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