mds 30
Abstract: BRIDGE RECTIFIERS MB16PT marking MDs MB12PT ultrafast bridge rectifiers
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Maximum Maximum Average Forward Peak Reverse Peak Rectified Current Surge Current Current Reverse @Half-Wave @ 25°C @ 8.3mS Voltage Resistive Load Superimposed TA IR IO PRV IFM Surge
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HMB11PT
HMB12PT
HMB13PT
MB14PT
MB16PT
MB12SPT
MB14SPT
MB16SPT
MB12LPT
MB14LPT
mds 30
BRIDGE RECTIFIERS
MB16PT
marking MDs
MB12PT
ultrafast bridge rectifiers
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BRIDGE RECTIFIERS
Abstract: MB12 MB14 MB16S DB104-S DB102S
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Maximum Peak Reverse Voltage P RV V PK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz IO @ TA oC A AV Maximum Maximum Maximum Forward Peak
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HMB11
HMB12
HMB13
MB12S
MB14S
MB16S
MB12L
MB14L
MB16L
DB101-S
BRIDGE RECTIFIERS
MB12
MB14
MB16S
DB104-S
DB102S
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Untitled
Abstract: No abstract text available
Text: Printview: End plate; with fixing flange - Item No.: 261-361 . End plate; with fixing flange Item No.: 261-361 . End plate; with fixing flange . Marking . Business data Supplier WAGO Item no. 261-361 EAN 4017332141260 Content 1 Order amount 50 Customer item number
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07436/C0
E-9215
17295-00HH
HMB05880-EL002
E45172
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HM28S
Abstract: HMBT28S
Text: HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBT28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER Voice Rom IC audio output driver stage amplifier
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HN200213
HMBT28S
HMBT28S
OT-23
183oC
217oC
260oC
HM28S
HM28S
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HMBTH10
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HN200101 Issued Date : 2000.02.01 Revised Date : 2008.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
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HN200101
HMBTH10
HMBTH10
OT-23
Dissipat60
183oC
217oC
260oC
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HMBT9014
Abstract: HMBT9015
Text: HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 MICROELECTRONICS CORP. HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features
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HN200212
HMBT9014
HMBT9014
OT-23
225mW)
HMBT9015
183oC
217oC
260oC
HMBT9015
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HMBZ5221B
Abstract: HMBZ5222B HMBZ5223B HMBZ5225B HMBZ5226B HMBZ5227B HMBZ5228B HMBZ5229B HMBZ5230B HMBZ5257B
Text: HI-SINCERITY Spec. No. : HE6803 Issued Date : 1995.12.28 Revised Date : 2004.08.30 Page No. : 1/13 MICROELECTRONICS CORP. HMBZ5221B thru HMBZ5257B ZENER DIODES SOT-23 Thermal Characteristics Characteristics Symbol Total Device Dissipation FR-5 Board Max Unit
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HE6803
HMBZ5221B
HMBZ5257B
OT-23
183oC
217oC
260oC
HMBZ52XXB
HMBZ5221B
HMBZ5222B
HMBZ5223B
HMBZ5225B
HMBZ5226B
HMBZ5227B
HMBZ5228B
HMBZ5229B
HMBZ5230B
HMBZ5257B
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HMBD4148
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6802 Issued Date : 1995.12.09 Revised Date : 2002.10.25 Page No. : 1/2 HMBD4148 HIGH-SPEED SWITCHING DIODE Description The HMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon
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HE6802
HMBD4148
HMBD4148
OT-23
OT-23)
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HMBT4125
Abstract: sot-23 marking code RD
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6844 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/2 HMBT4125 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4125 is designed for general purpose switching and amplifier applications.
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HE6844
HMBT4125
HMBT4125
OT-23
sot-23 marking code RD
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HMBT2484
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6847 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT2484 NPN EPITAXIAL PLANAR TRANSISTOR Description Low Noise Transistor. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE6847
HMBT2484
OT-23
HMBT2484
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smd code marking LF sot23
Abstract: D531 MARKING D53 smd transistor db6 sot-23 HMBD2004 HMBD2004C HMBD2004S D53 SOT23 d53 MARKING CODE SOT23
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6858 Issued Date : 1994.01.25 Revised Date : 2002.10.25 Page No. : 1/2 HMBD2004\C\S Description The HMBD2004\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package.
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HE6858
HMBD2004\C\S
HMBD2004\C\S
OT-23
OT-23
HMBD2004
HMBD2004C
HMBD2004S
HMBD2004,
smd code marking LF sot23
D531
MARKING D53
smd transistor db6 sot-23
D53 SOT23
d53 MARKING CODE SOT23
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smd code marking LF sot23
Abstract: smd code A82 A82 SMD smd diode A82 smd A82 HMBD2003 HMBD2003C HMBD2003S
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6857 Issued Date : 1994.01.25 Revised Date : 2002.10.25 Page No. : 1/2 HMBD2003\C\S Description The HMBD2003\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package.
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HE6857
HMBD2003\C\S
HMBD2003\C\S
OT-23
OT-23
HMBD2003
HMBD2003C
HMBD2003S
HMBD2003,
smd code marking LF sot23
smd code A82
A82 SMD
smd diode A82
smd A82
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HMBD914
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2002.10.25 Page No. : 1/3 HMBD914 HIGH-SPEED SWITCHING DIODE Description The HMBD914 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The device is manufactured by the silicon
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HE6538
HMBD914
HMBD914
OT-23
OT-23)
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SOT23 MARKING
Abstract: HMBTA14 HMBTA64
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.
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HE6807
HMBTA64
HMBTA64
500mA.
OT-23
HMBTA14
SOT23 MARKING
HMBTA14
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HMBT5088
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6824 Issued Date : 1993.08.27 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5088 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5088 is designed for low noise, high gain, general purpose amplifier applications.
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HE6824
HMBT5088
HMBT5088
OT-23
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HMBT4124
Abstract: ROC SOT 23
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6859 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT4124 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4124 is designed for general purpose switching and amplifier applications.
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HE6859
HMBT4124
HMBT4124
OT-23
ROC SOT 23
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HMBT5087
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6850 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5087 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5087 is designed for low noise, high gain, general purpose amplifier applications.
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HE6850
HMBT5087
HMBT5087
OT-23
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HMBT5086
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6849 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5086 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5086 is designed for low noise , high gain , general purpose amplifier applications.
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HE6849
HMBT5086
HMBT5086
OT-23
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HMBTA14
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2001.06.15 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C
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HE6841
HMBTA14
HMBTA14
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HMBTA42
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA42 NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE6848
HMBTA42
OT-23
HMBTA42
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HMBD4148
Abstract: DIODE SMD MARKING 5.C
Text: HI-SINCERITY Spec. No. : HE6802 Issued Date : 1995.12.09 Revised Date : 2004.09.01 Page No. : 1/3 MICROELECTRONICS CORP. HMBD4148 HIGH-SPEED SWITCHING DIODE Description SOT-23 The HMBD4148 is designed for high-speed switching application in hybrid thick-and
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Original
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HE6802
HMBD4148
OT-23
HMBD4148
OT-23)
183oC
217oC
260oC
DIODE SMD MARKING 5.C
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HMBT6427
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6846 Issued Date : 1995.07.21 Revised Date : 2002.10.25 Page No. : 1/3 HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE6846
HMBT6427
OT-23
HMBT6427
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vhf receiver
Abstract: HMBTH10
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200101 Issued Date : 2000.02.01 Revised Date : 2002.10.25 Page No. : 1/3 HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
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HN200101
HMBTH10
HMBTH10
OT-23
vhf receiver
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marking MOW
Abstract: marking code mow
Text: TVS I I PROlEK DEVICES E n g in e e r e d s o lu t io n s f o r t h e t r a n s i e n t e n v ir o n m e n t T r a n a ie n t V o lta g e S u D P r '’e E35 □ n £= HMBLC05/24 Law Capacitance DESCRIPTION This series of Surface Mount TVS Arrays is designed for applications which require multiple line
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OCR Scan
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HMBLC05/24
marking MOW
marking code mow
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