marking JB diode
Abstract: JB marking transistor JB SOT323 BAV99W BAV99W-T1 marking JB
Text: BAV99W WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability
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BAV99W
OT-323,
MIL-STD-202,
OT-323
marking JB diode
JB marking transistor
JB SOT323
BAV99W
BAV99W-T1
marking JB
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Diode SOT-23 marking JB
Abstract: marking JB diode BAV99-T1-LF JB marking transistor MARKING JB SOT-23 BAV99 SOT 23 DATA SHEET Diode bav99 BAV99 BAV99-T1 MARKING JB
Text: BAV99 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability
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BAV99
OT-23,
MIL-STD-202,
OT-23
Diode SOT-23 marking JB
marking JB diode
BAV99-T1-LF
JB marking transistor
MARKING JB SOT-23
BAV99 SOT 23 DATA SHEET
Diode bav99
BAV99
BAV99-T1
MARKING JB
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824022
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to
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OT23-3L
5/50ns)
UL94V-0
D-74638
824022
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C5440
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional
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OT23-3L
5/50ns)
UL94V-0
D-74638
C5440
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Untitled
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 824001 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
5/50ns)
UL94V-0
D-74638
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Untitled
Abstract: No abstract text available
Text: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the
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FDZ7064S
FDZ7064S
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marking JB SCHOTTKY BARRIER DIODE
Abstract: FDZ7064N FDZ7064S mosfet marking jb
Text: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the
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FDZ7064S
FDZ7064S
marking JB SCHOTTKY BARRIER DIODE
FDZ7064N
mosfet marking jb
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SOT23-6L Marking Code
Abstract: WE-TVS
Text: Specification for release Customer : Ordercode: Description: Package: 824013 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2012-02-22 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
5/50ns)
UL94V-0
D-74638
SOT23-6L Marking Code
WE-TVS
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WE-TVS 824011
Abstract: WE-TVS W11XY
Text: Specification for release Customer : Ordercode: Description: Package: 824011 TVS Diode Array WE-TVS SOT23-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-5L
5/50ns)
UL94V-0
D-74638
WE-TVS 824011
WE-TVS
W11XY
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824022
Abstract: WE-TVS W22XY sot23 marking JB tlp 8a dut79
Text: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to
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OT23-3L
5/50ns)
OT23-3L
UL94V-0
D-74638
824022
WE-TVS
W22XY
sot23 marking JB
tlp 8a
dut79
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WE-TVS 824015
Abstract: SOT23-6L Marking Code
Text: Specification for release Customer : Ordercode: Description: Package: 824015 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
5/50ns)
UL94V-0
D-74638
WE-TVS 824015
SOT23-6L Marking Code
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Untitled
Abstract: No abstract text available
Text: BAS16TW/BAW56DW/BAV70DW/BAV99S SURFACE MOUNT SWITCHING DIODES VOLTAGE 100 Volts POWER 200mWatts FEATURES • Fast switching speed. • Surface mount package Ideally Suited for Automatic insertion • High Conductance • MECHANICAL DATA • Case: SOT-363, Pla stic
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BAS16TW/BAW56DW/BAV70DW/BAV99S
200mWatts
OT-363,
MIL-STD-750,
BAS16TW
BAW56DW
BAV70DW
BAV99S
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W1646
Abstract: MSOP-8L diode code yw
Text: Specification for release Customer : Ordercode: Description: Package: 82401646 TVS Diode Array WE-TVS MSOP-8L DATUM / DATE : 2010-09-24 A Features B Schematic and Pin Configuration: • ESD Protection for Super Speed Differential Signaling above 5Gb/s channels like USB 3.0
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PDF
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UL94V-0
D-74638
W1646
MSOP-8L
diode code yw
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Untitled
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
UL94V-0
D-74638
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BAR74
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-F704
OT-23
EHS00011
BAR74
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Q62702-A615
Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
Text: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage
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OCR Scan
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PDF
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Q62702-A615
Q62702-A704
Q62702-A615
marking JB
Q62702-A704
marking JB diode
74 MARKING CODE
74 MARKING
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23
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OCR Scan
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PDF
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053b3E0
Q62702-A615
Q62702-A704
175PF
23b32Ã
T-03-Q9
023b3SD
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TI43A
Abstract: No abstract text available
Text: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •
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OCR Scan
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ERC30
1995-9095t/R89
TI43A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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OCR Scan
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PDF
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
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OCR Scan
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PDF
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FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded
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OCR Scan
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PDF
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FTO-220G
J533-1)
SG20TC12M
50IIz
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
diode marking jb
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SF10LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE Package I FTO-220 SF10LC40 Unit :mm Weight 1.9« Typ 4.5 4 0 0 V 10 A Feature • ñS'fX • trr=50ns • 711^-10 K 2kV ( S II • • • • Low Noise tnr=50ns Full Molded Dielectric Strength 2kV Main Use •
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OCR Scan
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PDF
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FTO-220
SF10LC40
SF10LC40
J533-1)
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BAX12
Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Text: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)
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OCR Scan
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BAX12
BAX12
BAY85S
MARKING D53
marking IAY
marking JB diode
BAV70
BAV74
BAW56
BAT18DK
Thomson-CSF diodes
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : MTO-3P S20LC60US U nit I mm W eight 6 .1 g T y p : 600V 20A Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr= 25ns I • trr=25ns • Small ö jc • 0 jc jb V l'£ l'
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OCR Scan
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PDF
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S20LC60US
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